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Results: 1-25/28
Authors:
TAKEYAMA M
NOYA A
Citation: M. Takeyama et A. Noya, PREPARATION OF WNX FILMS AND THEIR DIFFUSION BARRIER PROPERTIES IN CUSI CONTACT SYSTEMS/, JPN J A P 1, 36(4A), 1997, pp. 2261-2266
Authors:
FUKUDA T
TAKEYAMA M
NOYA A
Citation: T. Fukuda et al., SOLID-PHASE REACTIONS IN POLYMORPHIC EPITAXIAL CONTACT SYSTEMS OF AL YSI2-X/SI/, JPN J A P 1, 36(4A), 1997, pp. 2319-2320
Authors:
NOYA A
TAKEYAMA M
SASAKI K
AOYAGI E
HIRAGA K
Citation: A. Noya et al., TRANSMISSION ELECTRON-MICROSCOPY OF THE SEQUENCE OF PHASE-FORMATION IN THE INTERFACIAL SOLID-PHASE REACTIONS IN TA SI SYSTEMS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 253-257
Authors:
TAKEYAMA M
NOYA A
FUKUDA T
Citation: M. Takeyama et al., THERMAL-STABILITY OF CU W/SI CONTACT SYSTEMS USING LAYERS OF CU(111) AND W(110) PREFERRED ORIENTATIONS/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(2), 1997, pp. 415-420
Authors:
YANAGISAWA H
NOYA A
SASAKI K
ABE Y
Citation: H. Yanagisawa et al., DIFFUSION BARRIER EFFECTS OF AL3ZR ZR BILAYERED FILMS INTERPOSED BETWEEN AL AND SI/, Electronics & communications in Japan. Part 2, Electronics, 79(9), 1996, pp. 63-69
Authors:
TAKEYAMA M
NOYA A
MURAKAMI Y
SASAKI K
Citation: M. Takeyama et al., CHARACTERISTICS AND GROWTH-PROCESSES OF A SURFACE OXIDIZED LAYER FORMED ON AL-Y ALLOY-FILMS, Electronics & communications in Japan. Part 2, Electronics, 79(9), 1996, pp. 78-87
Authors:
YOSHIMOTO K
SASAKI K
YANAGISAWA H
NOYA A
Citation: K. Yoshimoto et al., PREPARATION OF CUTI-CN(3)TI COMPOUND ALLOY-FILMS AND THEIR APPLICATIONS AS DIFFUSION BARRIER IN CU CUTI-CU3TI/TIN/SI MULTILAYERED CONTACT SYSTEM/, Electronics & communications in Japan. Part 2, Electronics, 79(8), 1996, pp. 49-56
Authors:
YAMANE M
SASAKI K
ABE Y
KAWAMURA M
NOYA A
Citation: M. Yamane et al., REASONS FOR HEAT-RESISTANCE AND REDUCED OXIDE THICKNESS OF TA2N ANODIZED CAPACITORS, Electronics & communications in Japan. Part 2, Electronics, 79(11), 1996, pp. 76-83
Authors:
TAKEYAMA M
NOYA A
SAKANISHI K
SEKI H
SASAKI K
Citation: M. Takeyama et al., SOLID-PHASE REACTIONS OF DIFFUSION-BARRIERS OF TI AND TIN TO COPPER LAYERS ON SIO2, JPN J A P 1, 35(7), 1996, pp. 4027-4033
Authors:
ICHIKAWA T
TAKEYAMA M
NOYA A
Citation: T. Ichikawa et al., OXIDATION BEHAVIOR OF TA THIN-FILMS AS A PASSIVATION LAYER DEPOSITED ON CU, JPN J A P 1, 35(3), 1996, pp. 1844-1845
Authors:
TAKEYAMA M
NOYA A
SASAKI K
Citation: M. Takeyama et al., EFFECTS OF AL3TA TAN BILAYERED DIFFUSION-BARRIERS IN THE AL/SI CONTACT SYSTEMS/, JPN J A P 1, 35(2A), 1996, pp. 699-703
Authors:
TAKEYAMA M
NOYA A
TAGUCHI M
ICHIKAWA T
SASAKI K
Citation: M. Takeyama et al., OXIDATION CHARACTERISTICS OF AL-TA THIN ALLOY-FILMS AS A PASSIVATION LAYER ON CU, JPN J A P 1, 35(2A), 1996, pp. 704-708
Authors:
NOYA A
TAKEYAMA M
SASAKI K
AOYAGI E
HIRAGA K
Citation: A. Noya et al., TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF POLYMORPHIC EPITAXIAL-GROWTH OF YSI2-X LAYER IN AL(001) YSI2-X/SI(001) SYSTEMS/, JPN J A P 1, 35(10), 1996, pp. 5428-5431
Authors:
TAKEYAMA M
NOYA A
SASE T
OHTA A
SASAKI K
Citation: M. Takeyama et al., PROPERTIES OF TANX FILMS AS DIFFUSION-BARRIERS IN THE THERMALLY STABLE CU SI CONTACT SYSTEMS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 674-678
Authors:
OHTA A
NOYA A
TAKEYAMA M
TAGUCHI M
SASE T
SASAKI K
Citation: A. Ohta et al., PREPARATION OF TA2AL INTERMETALLIC COMPOUND FILMS AND THEIR APPLICATION AS DIFFUSION-BARRIERS TO CU PENETRATION, Thin solid films, 278(1-2), 1996, pp. 6-11
Authors:
TAKEYAMA M
ICHIKAWA T
NOYA A
Citation: M. Takeyama et al., OXIDATION BEHAVIOR OF AL-W ALLOY-FILMS DEPOSITED ON CU AS A PASSIVATION LAYER, Thin solid films, 272(1), 1996, pp. 18-20
Authors:
TAKEYAMA M
KAGOMI S
NOYA A
SAKANISHI K
SASAKI K
Citation: M. Takeyama et al., APPLICATION OF AMORPHOUS CU-ZR BINARY ALLOY AS A DIFFUSION BARRIER INCU SI CONTACT SYSTEMS/, Journal of applied physics, 80(1), 1996, pp. 569-573
Authors:
YANAGISWA H
KARASAWA H
NOYA A
SASAKI K
Citation: H. Yanagiswa et al., AUGER-ELECTRON SPECTROSCOPY STUDY OF THE SOLID-PHASE REACTIONS IN AL3ZR ZR/SI CONTACT SYSTEMS/, Electronics & communications in Japan. Part 2, Electronics, 78(9), 1995, pp. 81-88
Authors:
SASAKI K
YAMANE M
ABE Y
NOYA A
Citation: K. Sasaki et al., HEAT-PROOF PROPERTIES OF TA2N ANODIZED THIN-FILM CAPACITORS PREPARED AT LOW ANODIZATION VOLTAGE, Electronics & communications in Japan. Part 2, Electronics, 78(9), 1995, pp. 97-103
Authors:
ARAGON M
BARRETO A
CHAMBULE J
NOYA A
TALLARICO M
Citation: M. Aragon et al., SHIGELLOSIS IN MOZAMBIQUE - THE 1993 OUTBREAK REHABILITATION - A FOLLOW-UP-STUDY, Tropical doctor, 25(4), 1995, pp. 159-162
Authors:
NAKANISHI T
TAKEYAMA M
NOYA A
SASAKI K
Citation: T. Nakanishi et al., FORMATION OF METAL-RICH SILICIDES IN THE INITIAL-STAGE OF INTERFACIALREACTIONS IN NB SI SYSTEMS/, Journal of applied physics, 77(2), 1995, pp. 948-950
Authors:
DOBASHI T
UMEZAWA T
SASAKI K
NOYA A
Citation: T. Dobashi et al., THE OXIDATION PROCESS AND DISSIPATION FACTOR OF AL TA/HF MULTILAYEREDANODIZED THIN-FILM CAPACITORS/, Electronics & communications in Japan. Part 2, Electronics, 77(12), 1994, pp. 59-66
Authors:
SASAKI T
KAGOMI S
SASAKI K
NOYA A
YOSHIMOTO K
Citation: T. Sasaki et al., EFFECT OF THE PHASE-TRANSITION OF TI SILICIDE ON THE THERMAL-STABILITY OF SI-INTERFACE IN THE CU CUTI2/TI/SI CONTACT SYSTEM/, Electronics & communications in Japan. Part 2, Electronics, 77(1), 1994, pp. 108-116
Authors:
NOYA A
TAKEYAMA M
SASAKI K
AOYAGI E
HIRAGA K
Citation: A. Noya et al., THERMAL-STABILITY OF W2N FILM AS A DIFFUSION BARRIER BETWEEN AL AND SI, JPN J A P 1, 33(3A), 1994, pp. 1528-1529
Authors:
NOMURA K
NOYA A
SASAKI K
SUNAGA K
Citation: K. Nomura et al., ORIENTED GROWTH OF CU(110) ON YSI2-X(1(1)OVER-BAR-00 SI(100) AND DIFFUSION BEHAVIOR IN COPPER SILICIDE FORMATION/, JPN J A P 2, 33(6B), 1994, pp. 120000880-120000883