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Results: 1-25/43
Authors:
HARA K
OHDOMARI I
Citation: K. Hara et I. Ohdomari, MORPHOLOGY CONTROL OF CU CLUSTERS FORMED ON H-SI(111) SURFACE IN SOLUTION BY SI POTENTIAL, JPN J A P 2, 37(11A), 1998, pp. 1333-1335
Authors:
MATSUKAWA T
SHINADA T
FUKAI T
OHDOMARI I
Citation: T. Matsukawa et al., KEY TECHNOLOGIES OF A FOCUSED ION-BEAM SYSTEM FOR SINGLE-ION IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2479-2483
Authors:
SHINADA T
KUMURA Y
OKABE J
MATSUKAWA T
OHDOMARI I
Citation: T. Shinada et al., CURRENT STATUS OF SINGLE-ION IMPLANTATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2489-2493
Authors:
WATANABE T
HANDA T
HOSHINO T
OHDOMARI I
Citation: T. Watanabe et al., EFFECT OF FIXED PARTICLES ON PERIODIC ADATOM ARRANGEMENTS ON SI(111) UNRECONSTRUCTED SURFACES, Applied surface science, 132, 1998, pp. 6-12
Authors:
OHDOMARI I
Citation: I. Ohdomari, ACSI-4 - PROCEEDINGS OF THE 4TH INTERNATIONAL-SYMPOSIUM ON ATOMICALLYCONTROLLED SURFACES AND INTERFACES - TOKYO, JAPAN, OCTOBER 27-30, 1997 - PREFACE, Applied surface science, 132, 1998, pp. 7-7
Authors:
ISHIMARU T
SHIMADA K
HOSHINO T
KAWADA H
OHDOMARI I
Citation: T. Ishimaru et al., STEPWISE CHANGE IN GIBBS FREE-ENERGY CURVE OBSERVED IN SI(111) DAS DOMAIN GROWTH, Applied surface science, 132, 1998, pp. 18-22
Authors:
SHIMADA K
ISHIMARU T
KATSUBE S
KAWADA H
OHDOMARI I
Citation: K. Shimada et al., REACTIVITY OF O-2, WITH SI(111) SURFACES WITH DIFFERENT SURFACE-STRUCTURES, Applied surface science, 132, 1998, pp. 170-175
INFLUENCE OF OXYGEN ON THE FORMATION OF SI(111)-7X7 DOMAINS STUDIED BY SCANNING-TUNNELING-MICROSCOPY
Authors:
ISHIMARU T
HOSHINO T
KAWADA H
SHIMADA K
WATANABE T
OHDOMARI I
Citation: T. Ishimaru et al., INFLUENCE OF OXYGEN ON THE FORMATION OF SI(111)-7X7 DOMAINS STUDIED BY SCANNING-TUNNELING-MICROSCOPY, Physical review. B, Condensed matter, 58(15), 1998, pp. 9863-9866
Authors:
MATSUKAWA T
MORI S
TANII T
ARIMURA T
KOH M
IGARASHI K
SUGIMOTO T
OHDOMARI I
Citation: T. Matsukawa et al., 3-DIMENSIONAL SITE DEPENDENCE OF SINGLE-ION-INDUCED CHARGE COLLECTIONAT A P-N JUNCTION-ROLE OF FUNNELING AND DIFFUSION-PROCESSES UNDER DIFFERENT ION ENERGY, Journal of applied physics, 83(6), 1998, pp. 3413-3418
Authors:
KOYAMA M
CHEONG CW
YOKOYAMA K
OHDOMARI I
Citation: M. Koyama et al., INFLUENCE OF NEAR-SURFACE DEFECTS IN SI INDUCED BY REACTIVE ION ETCHING ON THE ELECTRICAL-PROPERTIES OF THE PT N-SI INTERFACE/, JPN J A P 1, 36(11), 1997, pp. 6682-6686
Authors:
KOYAMA M
CHEONG CW
YOKOYAMA K
OHDOMARI I
Citation: M. Koyama et al., ESTIMATION OF SPATIAL EXTENT OF A DEFEAT CLUSTER IN SI INDUCED BY SINGLE-ION IRRADIATION, JPN J A P 2, 36(6A), 1997, pp. 708-710
Authors:
WATANABE T
HOSHINO T
OHDOMARI I
Citation: T. Watanabe et al., MECHANISM OF H-2 DESORPTION FROM H-TERMINATED SI(001) SURFACES, Applied surface science, 117, 1997, pp. 67-71
Authors:
KOH M
IGARASHI K
SUGIMOTO T
MATSUKAWA T
MORI S
ARIMURA T
OHDOMARI I
Citation: M. Koh et al., QUANTITATIVE CHARACTERIZATION OF SI SIO2 INTERFACE TRAPS INDUCED BY ENERGETIC IONS BY MEANS OF SINGLE-ION MICROPROBE AND SINGLE-ION BEAM-INDUCED CHARGE IMAGING/, Applied surface science, 117, 1997, pp. 171-175
Authors:
MATSUKAWA T
FUKAI T
SUZUKI S
HARA K
KOH M
OHDOMARI I
Citation: T. Matsukawa et al., DEVELOPMENT OF SINGLE-ION IMPLANTATION - CONTROLLABILITY OF IMPLANTEDION NUMBER, Applied surface science, 117, 1997, pp. 677-683
Authors:
SHINADA T
KIMURA H
KUMURA Y
OHDOMARI I
Citation: T. Shinada et al., DAMAGE AND CONTAMINATION FREE FABRICATION OF THIN SI WIRES WITH HIGHLY CONTROLLED FEATURE SIZE, Applied surface science, 117, 1997, pp. 684-689
Authors:
OHDOMARI I
WATANABE T
KUMAMOTO K
HOSHINO T
Citation: I. Ohdomari et al., CONSIDERATION OF ATOM MOVEMENT DURING SI SURFACE RECONSTRUCTION, Phase transitions, 62(4), 1997, pp. 245-258
Authors:
HOSHINO T
KAMIJOU N
FUJIWARA H
WATANABE T
OHDOMARI I
Citation: T. Hoshino et al., THEORETICAL INVESTIGATION ON THE FORMATION PROCESS OF THE STACKING-FAULT TRIANGLE IN THE SI(111)-7X7 STRUCTURE, Surface science, 394(1-3), 1997, pp. 119-128
Authors:
WATANABE T
HOSHINO T
OHDOMARI I
Citation: T. Watanabe et al., MONTE-CARLO STUDY ON FORMATION OF PERIODIC STRUCTURES ON SI(111) SURFACES, Surface science, 389(1-3), 1997, pp. 375-381
Authors:
TANII T
MATSUKAWA T
MORI S
KOH M
SHIGETA B
IGARASHI K
OHDOMARI I
Citation: T. Tanii et al., NONSCALABILITY OF ALPHA-PARTICLE-INDUCED CHARGE COLLECTION AREA, JPN J A P 2, 35(6A), 1996, pp. 688-690
Authors:
HOSHINO T
ISHIMARU T
KUMAMOTO K
KAWADA H
OHDOMARI I
Citation: T. Hoshino et al., DYNAMIC FEATURES IN GENERATION AND DISAPPEARANCE OF SI(111)-7X7 DOMAINS, Applied surface science, 107, 1996, pp. 53-57
Authors:
MATSUKAWA T
SUZUKI S
FUKAI T
TANAKA T
OHDOMARI I
Citation: T. Matsukawa et al., STM OBSERVATION OF CRATERS ON GRAPHITE SURFACE-INDUCED BY SINGLE-ION IMPLANTATION, Applied surface science, 107, 1996, pp. 227-232
Authors:
KOYAMA M
AKITA Y
CHEONG C
KOH M
MATSUKAWA T
HORITA K
SHIGETA B
OHDOMARI I
Citation: M. Koyama et al., QUANTITATIVE-ANALYSIS OF DEGRADATION IN SCHOTTKY DIODE CHARACTERISTICS INDUCED BY SINGLE-ION IMPLANTATION, Applied surface science, 104, 1996, pp. 253-256
Authors:
KOH M
HORITA K
SHIGETA B
MATSUKAWA T
KISHIDA A
TANII T
MORI S
OHDOMARI I
Citation: M. Koh et al., RADIATION IMMUNITY OF PMOSFETS AND NMOSFET EXAMINED BY MEANS OF MEV HE SINGLE-ION MICROPROBE, Applied surface science, 104, 1996, pp. 364-368
Authors:
HOSHINO T
HATA M
OIKAWA S
TSUDA M
OHDOMARI I
Citation: T. Hoshino et al., ORIGIN OF BUCKLING-DIMER-ROW FORMATION OF SI(001) SURFACES, Physical review. B, Condensed matter, 54(16), 1996, pp. 11331-11339
Authors:
KUMAMOTO K
HOSHINO T
KOKUBUN K
ISHIMARU T
OHDOMARI I
Citation: K. Kumamoto et al., DYNAMIC GROWTH STEPS OF NXN DIMER-ADATOM-STACKING-FAULT DOMAINS ON THE QUENCHED SI(111) SURFACE, Physical review. B, Condensed matter, 53(19), 1996, pp. 12907-12911