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Results:
1-17
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Results: 17
Authors:
Chernyak, L
Osinsky, A
Schulte, A
Citation: L. Chernyak et al., Minority carrier transport in GaN and related materials, SOL ST ELEC, 45(9), 2001, pp. 1687-1702
Authors:
Chernyak, L
Osinsky, A
Fuflyigin, VN
Graff, JW
Schubert, EF
Citation: L. Chernyak et al., Minority electron transport anisotropy in p-type AlxGa1-xN/GaN superlattices, IEEE DEVICE, 48(3), 2001, pp. 433-437
Authors:
Graff, JW
Schubert, EF
Osinsky, A
Citation: Jw. Graff et al., GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching, ELECTR LETT, 37(4), 2001, pp. 249-250
Authors:
Chernyak, L
Osinsky, A
Pearton, SJ
Ren, F
Citation: L. Chernyak et al., Phototransistor measurements in AlGaN/GaN HBTs, ELECTR LETT, 37(23), 2001, pp. 1411-1412
Authors:
Chernyak, L
Nootz, G
Osinsky, A
Citation: L. Chernyak et al., Enhancement of minority carrier transport in forward biased GaN p-n junction, ELECTR LETT, 37(14), 2001, pp. 922-923
Authors:
Fuflyigin, V
Salley, E
Vakhutinsky, P
Osinsky, A
Zhao, J
Gergis, I
Whiteaker, K
Citation: V. Fuflyigin et al., Free-standing films of PbSc0.5Ta0.5O3 for uncooled infrared detectors, APPL PHYS L, 78(3), 2001, pp. 365-367
Authors:
Goepfert, ID
Schubert, EF
Osinsky, A
Norris, PE
Faleev, NN
Citation: Id. Goepfert et al., Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1-xN/GaN superlattices, J APPL PHYS, 88(4), 2000, pp. 2030-2038
Authors:
Wang, F
Fuflyigin, V
Osinsky, A
Citation: F. Wang et al., Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire, J APPL PHYS, 88(3), 2000, pp. 1701-1703
Authors:
Zhou, L
Ping, AT
Khan, F
Osinsky, A
Adesida, I
Citation: L. Zhou et al., Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices, ELECTR LETT, 36(1), 2000, pp. 91-93
Authors:
Chernyak, L
Osinsky, A
Fuflyigin, V
Schubert, EF
Citation: L. Chernyak et al., Electron beam-induced increase of electron diffusion length in p-type GaN and AlGaN/GaN superlattices, APPL PHYS L, 77(6), 2000, pp. 875-877
Authors:
Fuflyigin, V
Salley, E
Osinsky, A
Norris, P
Citation: V. Fuflyigin et al., Pyroelectric properties of AlN, APPL PHYS L, 77(19), 2000, pp. 3075-3077
Authors:
Chernyak, L
Osinsky, A
Nootz, G
Schulte, A
Jasinski, J
Benamara, M
Liliental-Weber, Z
Look, DC
Molnar, RJ
Citation: L. Chernyak et al., Electron beam and optical depth profiling of quasibulk GaN, APPL PHYS L, 77(17), 2000, pp. 2695-2697
Authors:
Li, YL
Schubert, EF
Graff, JW
Osinsky, A
Schaff, WF
Citation: Yl. Li et al., Low-resistance ohmic contacts to p-type GaN, APPL PHYS L, 76(19), 2000, pp. 2728-2730
Authors:
Mintairov, A
Merz, J
Osinsky, A
Fuflyigin, V
Zhu, LD
Citation: A. Mintairov et al., Infrared spectroscopy of ZnSiN2 single-crystalline films on r-sapphire, APPL PHYS L, 76(18), 2000, pp. 2517-2519
Authors:
Fuflyigin, V
Osinsky, A
Wang, F
Vakhutinsky, P
Norris, P
Citation: V. Fuflyigin et al., Growth of ferroelectric oxide films on n-GaN/c-sapphire structures, APPL PHYS L, 76(12), 2000, pp. 1612-1614
Authors:
Goepfert, ID
Schubert, EF
Osinsky, A
Norris, PE
Citation: Id. Goepfert et al., Demonstration of efficient p-type doping in AlxGa1-xN/GaN superlattice structures, ELECTR LETT, 35(13), 1999, pp. 1109-1111
Authors:
Tran, CA
Karlicek, RF
Schurman, M
Osinsky, A
Merai, V
Li, Y
Eliashevich, I
Brown, MG
Nering, J
Ferguson, I
Stall, R
Citation: Ca. Tran et al., Phase separation in InGaN/GaN multiple quantum wells and its relation to brightness of blue and green LEDs, J CRYST GR, 195(1-4), 1998, pp. 397-400
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1-17
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