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Results:
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Results: 21
Authors:
PASSLACK M
HONG M
HARRIS TD
MANNAERTS JP
VAKHSHOORI D
SCHNOES ML
Citation: M. Passlack et al., INSULATOR PASSIVATION OF IN0.2GA0.8AS-GAAS SURFACE QUANTUM-WELLS, IEEE journal of quantum electronics, 34(2), 1998, pp. 307-310
Authors:
PASSLACK M
DROOPAD R
YU Z
OVERGAARD C
BOWERS B
ABROKWAH J
Citation: M. Passlack et al., NONRADIATIVE RECOMBINATION AT GAAS HOMOINTERFACES FABRICATED USING ANAS CAP DEPOSITION REMOVAL PROCESS/, Applied physics letters, 72(24), 1998, pp. 3163-3165
Authors:
HONG M
PASSLACK M
MANNAERTS JP
HARRIS TD
SCHNOES ML
OPILA RL
KRAUTTER HW
Citation: M. Hong et al., A GA2O3 PASSIVATION TECHNIQUE COMPATIBLE WITH GAAS DEVICE PROCESSING, Solid-state electronics, 41(4), 1997, pp. 643-646
Authors:
HONG M
MANNAERTS JP
BOWER JE
KWO J
PASSLACK M
HWANG WY
TU LW
Citation: M. Hong et al., NOVEL GA2O3(GD2O3) PASSIVATION TECHNIQUES TO PRODUCE LOW D-IT OXIDE-GAAS INTERFACES, Journal of crystal growth, 175, 1997, pp. 422-427
Authors:
PASSLACK M
HONG M
SCHUBERT EF
ZYDZIK GJ
MANNAERTS JP
HOBSON WS
HARRIS TD
Citation: M. Passlack et al., ADVANCING METAL-OXIDE-SEMICONDUCTOR THEORY - STEADY-STATE NONEQUILIBRIUM CONDITIONS, Journal of applied physics, 81(11), 1997, pp. 7647-7661
Authors:
PASSLACK M
HONG M
MANNAERTS JP
OPILA RL
CHU SNG
MORIYA N
REN F
KWO JR
Citation: M. Passlack et al., LOW D-IT, THERMODYNAMICALLY STABLE GA2O3-GAAS INTERFACES - FABRICATION, CHARACTERIZATION, AND MODELING, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 214-225
Authors:
DUTTA NK
HOBSON WS
ZYDZIK GJ
DEJONG JF
PARAYANTHAL P
PASSLACK M
CHAKRABARTI UK
Citation: Nk. Dutta et al., MIRROR PASSIVATION OF INGAAS LASERS, Electronics Letters, 33(3), 1997, pp. 213-214
Authors:
HONG M
PASSLACK M
MANNAERTS JP
KWO J
CHU SNG
MORIYA N
HOU SY
FRATELLO VJ
Citation: M. Hong et al., LOW INTERFACE STATE DENSITY OXIDE-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2297-2300
Authors:
PASSLACK M
HONG M
OPILA RL
MANNAERTS JP
KWO JR
Citation: M. Passlack et al., GAAS SURFACE PASSIVATION USING IN-SITU OXIDE DEPOSITION, Applied surface science, 104, 1996, pp. 441-447
Authors:
PASSLACK M
HONG M
MANNAERTS JP
Citation: M. Passlack et al., C-V AND G-V CHARACTERIZATION OF IN-SITU FABRICATED GA2O3-GAAS INTERFACES FOR INVERSION ACCUMULATION DEVICE AND SURFACE PASSIVATION APPLICATIONS/, Solid-state electronics, 39(8), 1996, pp. 1133-1136
Authors:
PASSLACK M
HONG M
MANNAERTS JP
Citation: M. Passlack et al., OBSERVATION OF INVERSION-LAYERS AT GA(2)O(3)-GAAS INTERFACES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Electronics Letters, 32(3), 1996, pp. 267-269
Authors:
PASSLACK M
HONG MW
MANNAERTS JP
OPILA RL
REN F
Citation: M. Passlack et al., THERMODYNAMIC AND PHOTOCHEMICAL STABILITY OF LOW INTERFACE STATE DENSITY GA2O3-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Applied physics letters, 69(3), 1996, pp. 302-304
Authors:
PASSLACK M
HONG M
MANNAERTS JP
Citation: M. Passlack et al., QUASI-STATIC AND HIGH-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERIZATION OF GA2O3-GAAS STRUCTURES FABRICATED BY IN-SITU MOLECULAR-BEAM EPITAXY, Applied physics letters, 68(8), 1996, pp. 1099-1101
Authors:
PASSLACK M
HONG M
MANNAERTS JP
KWO JR
TU LW
Citation: M. Passlack et al., RECOMBINATION VELOCITY AT OXIDE-GAAS INTERFACES FABRICATED BY IN-SITUMOLECULAR-BEAM EPITAXY, Applied physics letters, 68(25), 1996, pp. 3605-3607
Authors:
PASSLACK M
BETHEA CG
HOBSON WS
LOPATA J
SCHUBERT EF
ZYDZIK GJ
NICHOLS DT
DEJONG JF
CHAKRABARTI UK
DUTTA NK
Citation: M. Passlack et al., INFRARED MICROSCOPY STUDIES ON HIGH-POWER INGAAS-GAAS-INGAP LASERS WITH GA2O3 FACET COATINGS, IEEE journal of selected topics in quantum electronics, 1(2), 1995, pp. 110-116
Authors:
CHAND N
JOHNSON JE
OSENBACH JW
LIANG WC
FELDMAN LC
TSANG WT
KRAUTTER HW
PASSLACK M
HULL R
SWAMINATHAN V
Citation: N. Chand et al., MOLECULAR-BEAM DEPOSITION OF HIGH-QUALITY SILICON-OXIDE DIELECTRIC FILMS, Journal of crystal growth, 148(4), 1995, pp. 336-344
Authors:
PASSLACK M
HONG M
MANNAERTS JP
CHIU TH
MENDONCA CA
CENTANNI JC
Citation: M. Passlack et al., CAPACITANCE-VOLTAGE AND CURRENT-VOLTAGE CHARACTERIZATION OF ALXGA1-XAS-GAAS STRUCTURES, Journal of applied physics, 78(12), 1995, pp. 7091-7098
Authors:
PASSLACK M
SCHUBERT EF
HOBSON WS
HONG M
MORIYA N
CHU SNG
KONSTADINIDIS K
MANNAERTS JP
SCHNOES ML
ZYDZIK GJ
Citation: M. Passlack et al., GA2O3 FILMS FOR ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, Journal of applied physics, 77(2), 1995, pp. 686-693
Authors:
PASSLACK M
HONG M
SCHUBERT EF
KWO JR
MANNAERTS JP
CHU SNG
MORIYA N
THIEL FA
Citation: M. Passlack et al., IN-SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY, Applied physics letters, 66(5), 1995, pp. 625-627
Authors:
SCHUBERT EF
PASSLACK M
HONG M
MANNERTS J
OPILA RL
PFEIFFER LN
WEST KW
BETHEA CG
ZYDZIK GJ
Citation: Ef. Schubert et al., PROPERTIES OF AL2O3 OPTICAL COATINGS ON GAAS PRODUCED BY OXIDATION OFEPITAXIAL ALAS GAAS FILMS/, Applied physics letters, 64(22), 1994, pp. 2976-2978
Authors:
PASSLACK M
HUNT NEJ
SCHUBERT EF
ZYDZIK GJ
HONG M
MANNAERTS JP
OPILA RL
FISCHER RJ
Citation: M. Passlack et al., DIELECTRIC-PROPERTIES OF ELECTRON-BEAM DEPOSITED GA2O3 FILMS, Applied physics letters, 64(20), 1994, pp. 2715-2717
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