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Results: 1-25/45
Authors:
Saarinen, M
Vilokkinen, V
Dumitrescu, M
Pessa, M
Citation: M. Saarinen et al., Resonant-cavity light-emitting diodes operating at 655 nm with a high external quantum efficiency and light power, IEEE PHOTON, 13(1), 2001, pp. 10-12
Authors:
Haapamaa, J
Pessa, M
La Roche, G
Citation: J. Haapamaa et al., Radiation resistance of MBE-grown GaInP/GaAs cascade solar cells flown onboard Equator-S satellite, SOL EN MAT, 66(1-4), 2001, pp. 573-578
Authors:
Suhonen, S
Valden, M
Pessa, M
Savimaki, A
Harkonen, M
Hietikko, M
Pursiainen, J
Laitinen, R
Citation: S. Suhonen et al., Characterization of alumina supported Pd catalysts modified by rare earth oxides using X-ray photoelectron spectroscopy and X-ray diffraction: enhanced thermal stability of PdO in Nd/Pd catalysts, APP CATAL A, 207(1-2), 2001, pp. 113-120
Authors:
Li, W
Pessa, M
Toivonen, J
Lipsanen, H
Citation: W. Li et al., Doping and carrier transport in Ga1-3xIn3xNxAs1-x alloys - art. no. 113308, PHYS REV B, 6411(11), 2001, pp. 3308
Authors:
Laukkanen, P
Lehkonen, S
Uusimaa, P
Pessa, M
Seppala, A
Ahlgren, T
Rauhala, E
Citation: P. Laukkanen et al., Emission studies of InGaN layers and LEDs grown by plasma-assisted MBE, J CRYST GR, 230(3-4), 2001, pp. 503-506
Authors:
Li, W
Turpeinen, J
Melanen, P
Savolainen, P
Uusimaa, P
Pessa, M
Citation: W. Li et al., Growth of strain-compensated GaInNAs/GaAsP quantum wells for 1.3 mu m lasers, J CRYST GR, 230(3-4), 2001, pp. 533-536
Authors:
Li, W
Laaksonen, S
Haapamaa, J
Pessa, M
Citation: W. Li et al., Growth of device-quality GaAs layer directly on (001) Ge substrates by both solid-source and gas-source MBE, J CRYST GR, 227, 2001, pp. 104-107
Authors:
Xiang, N
Tukiainen, A
Dekker, J
Likonen, J
Pessa, M
Citation: N. Xiang et al., Oxygen-related deep level defects in solid-source MBE grown GaInP, J CRYST GR, 227, 2001, pp. 244-248
Authors:
Orsila, S
Tukiainen, A
Uusimaa, P
Dekker, J
Leinonen, T
Pessa, M
Citation: S. Orsila et al., Growth of GaInP on misoriented substrates using solid source MBE, J CRYST GR, 227, 2001, pp. 249-254
Authors:
Saarinen, M
Xiang, N
Vilokkinen, V
Melanen, P
Orsila, S
Uusimaa, P
Savolainen, P
Toivonen, M
Pessa, M
Citation: M. Saarinen et al., Red vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 324-328
Authors:
Orsila, S
Leinonen, T
Uusimaa, P
Saarinen, M
Guina, M
Sipila, P
Vilokkinen, V
Melanen, P
Dumitrescu, M
Pessa, M
Citation: S. Orsila et al., Resonant cavity light-emitting diodes grown by solid source MBE, J CRYST GR, 227, 2001, pp. 346-351
Authors:
Li, W
Turpeinen, J
Melanen, P
Savolainen, P
Uusimaa, P
Pessa, M
Citation: W. Li et al., Strain-compensated GaInNAs/GaAsP/GaAs/GaInP quantum well lasers grown by gas-source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 541-544
Authors:
Guina, M
Dekker, J
Tukiainen, A
Orsila, S
Saarinen, M
Dumitrescu, M
Sipila, P
Savolainen, P
Pessa, M
Citation: M. Guina et al., Influence of deep level impurities on modulation response of InGaP light emitting diodes, J APPL PHYS, 89(2), 2001, pp. 1151-1155
Authors:
Xiang, N
Okhotnikov, O
Vainionpaa, A
Guina, M
Pessa, M
Citation: N. Xiang et al., Broadband semiconductor saturable absorber mirror at 1.55 mu m using Burstein-Moss shifted Ga0.47In0.53As/InP distributed Bragg reflector, ELECTR LETT, 37(6), 2001, pp. 374-375
Authors:
Li, W
Pessa, M
Ahlgren, T
Decker, J
Citation: W. Li et al., Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy, APPL PHYS L, 79(8), 2001, pp. 1094-1096
Authors:
Li, W
Jouhti, T
Peng, CS
Konttinen, J
Laukkanen, P
Pavelescu, EM
Dumitrescu, M
Pessa, M
Citation: W. Li et al., Low-threshold-current 1.32-mu m GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy, APPL PHYS L, 79(21), 2001, pp. 3386-3388
Authors:
Li, W
Pessa, M
Ahlgren, T
Dekker, J
Citation: W. Li et al., Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy (vol 79, pg 1094, 2001), APPL PHYS L, 79(17), 2001, pp. 2850-2850
Authors:
Li, W
Pessa, M
Likonen, J
Citation: W. Li et al., Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law, APPL PHYS L, 78(19), 2001, pp. 2864-2866
Authors:
Li, W
Turpeinen, J
Melanen, P
Savolainen, P
Uusimaa, P
Pessa, M
Citation: W. Li et al., Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers, APPL PHYS L, 78(1), 2001, pp. 91-92
Authors:
Guina, M
Orsila, S
Dumitrescu, M
Saarinen, M
Sipila, P
Vilokkinen, V
Roycroft, B
Uusimaa, P
Toivonen, M
Pessa, M
Citation: M. Guina et al., Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth, IEEE PHOTON, 12(7), 2000, pp. 786-788
Authors:
Vilokkinen, V
Sipila, P
Melanen, P
Saarinen, M
Orsila, S
Dumitrescu, M
Savolainen, P
Toivonen, M
Pessa, M
Citation: V. Vilokkinen et al., Resonant cavity light-emitting diodes at 660 and 880 nm, MAT SCI E B, 74(1-3), 2000, pp. 165-167
Authors:
Sipila, P
Saarinen, M
Guina, M
Vilokkinen, V
Toivonen, M
Pessa, M
Citation: P. Sipila et al., Temperature behaviour of resonant cavity light-emitting diodes at 650 nm, SEMIC SCI T, 15(4), 2000, pp. 418-421
Authors:
Barnes, CJ
Valden, M
Pessa, M
Citation: Cj. Barnes et al., The unusual adsorption behaviour of benzene on Co(10(1)over-bar0), SURF REV L, 7(1-2), 2000, pp. 67-74
Authors:
Dumitrescu, M
Toikkanen, L
Sipila, P
Vilokkinen, V
Melanen, P
Saarinen, M
Orsila, S
Savolainen, P
Toivonen, M
Pessa, M
Citation: M. Dumitrescu et al., Modeling and optimization of resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy, MICROEL ENG, 51-2, 2000, pp. 449-460
Authors:
Pessa, M
Toivonen, M
Savolainen, P
Orsila, S
Sipila, P
Saarinen, M
Melanen, P
Vilokkinen, V
Uusimaa, P
Haapamaa, J
Citation: M. Pessa et al., Growth of resonant cavity quantum well light emitting diodes and two-junction solar cells by solid source molecular beam epitaxy, THIN SOL FI, 367(1-2), 2000, pp. 260-266