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Results: 1-16 |
Results: 16
BLUE-GREEN MICROCAVITY LIGHT-EMITTING DIODE WITH MONOLITHIC MGZNSSE ZNSSE BRAGG REFLECTORS/
Authors: UUSIMAA P SALOKATVE A RAKENNUS K RINTAMOYKKY A PESSA M
Citation: P. Uusimaa et al., BLUE-GREEN MICROCAVITY LIGHT-EMITTING DIODE WITH MONOLITHIC MGZNSSE ZNSSE BRAGG REFLECTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 51(1-3), 1998, pp. 18-21
MAPPING OF BRAGG-SURFACE DIFFRACTION OF INP GAAS(100) STRUCTURE/
Authors: AVANCI LH HAYASHI MA CARDOSO LP MORELHAO SL RIESZ F RAKENNUS K HAKKARAINEN T
Citation: Lh. Avanci et al., MAPPING OF BRAGG-SURFACE DIFFRACTION OF INP GAAS(100) STRUCTURE/, Journal of crystal growth, 188(1-4), 1998, pp. 220-224
AN ATOMIC-FORCE MICROSCOPY STUDY OF THE SURFACE-MORPHOLOGY OF INP GAAS HETEROEPITAXIAL LAYERS SUBJECTED TO RAPID THERMAL ANNEALING/
Authors: RIESZ F VIGNALI C PELOSI C RAKENNUS K HAKKARAINEN T
Citation: F. Riesz et al., AN ATOMIC-FORCE MICROSCOPY STUDY OF THE SURFACE-MORPHOLOGY OF INP GAAS HETEROEPITAXIAL LAYERS SUBJECTED TO RAPID THERMAL ANNEALING/, Journal of applied physics, 83(1), 1998, pp. 246-249
MOLECULAR-BEAM EPITAXY OF P-TYPE ZNSSE USING A NITRIC-OXIDE PLASMA SOURCE
Authors: UUSIMAA P RAKENNUS K SALOKATVE A PESSA M LIKONEN J
Citation: P. Uusimaa et al., MOLECULAR-BEAM EPITAXY OF P-TYPE ZNSSE USING A NITRIC-OXIDE PLASMA SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 2426-2427
STOPPING POWERS OF GAAS FOR 0.32.5 MEV H-1 AND HE-4 IONS
Authors: RAJATORA M VAKEVAINEN K AHLGREN T RAUHALA E RAISANEN J RAKENNUS K
Citation: M. Rajatora et al., STOPPING POWERS OF GAAS FOR 0.32.5 MEV H-1 AND HE-4 IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 119(4), 1996, pp. 457-462
IDENTIFICATION OF THE NATIVE VACANCY DEFECTS IN BOTH SUBLATTICES OF ZNSXSE1-X BY POSITRON-ANNIHILATION
Authors: SAARINEN K LAINE T SKOG K MAKINEN J HAUTOJARVI P RAKENNUS K UUSIMAA P SALOKATVE A PESSA M
Citation: K. Saarinen et al., IDENTIFICATION OF THE NATIVE VACANCY DEFECTS IN BOTH SUBLATTICES OF ZNSXSE1-X BY POSITRON-ANNIHILATION, Physical review letters, 77(16), 1996, pp. 3407-3410
GROWTH OF II-VI BRAGG MIRRORS BY MOLECULAR-BEAM EPITAXY
Authors: RAKENNUS K UUSIMAA P NAPPI J SALOKATVE A PESSA M AHERNE T DORAN JP OGORMAN J HEGARTY J
Citation: K. Rakennus et al., GROWTH OF II-VI BRAGG MIRRORS BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 159(1-4), 1996, pp. 628-631
OPTICAL-PROPERTIES OF A ZNSSE MICROCAVITY FABRICATED BY EPITAXIAL LIFT-OFF
Authors: AHERNE T BRADLEY AL DORAN JP OGORMAN J HEFFERNAN JF HEGARTY J DENEVE H BRYS C GEENS G VANDAELE P BAETS R DEMEESTER P RAKENNUS K SALOKATVE A UUSIMAA P PESSA M
Citation: T. Aherne et al., OPTICAL-PROPERTIES OF A ZNSSE MICROCAVITY FABRICATED BY EPITAXIAL LIFT-OFF, Journal of crystal growth, 159(1-4), 1996, pp. 636-639
A GA0.51IN0.49P GAAS BASED PHOTOVOLTAIC CONVERTER FOR 2-DIRECTIONAL OPTICAL POWER AND DATA-TRANSMISSION/
Authors: VANTTINEN K LAMMASNIEMI J RAKENNUS K ASONEN H JURVA R KARIOJA P
Citation: K. Vanttinen et al., A GA0.51IN0.49P GAAS BASED PHOTOVOLTAIC CONVERTER FOR 2-DIRECTIONAL OPTICAL POWER AND DATA-TRANSMISSION/, Progress in photovoltaics, 3(1), 1995, pp. 57-63
STUDY OF ZNSE-BASED LAYER STRUCTURES FOR BLUE-GREEN LASER-DIODES
Authors: PESSA M RAKENNUS K UUSIMAA P SAVOLAINEN P SALOKATVE A
Citation: M. Pessa et al., STUDY OF ZNSE-BASED LAYER STRUCTURES FOR BLUE-GREEN LASER-DIODES, Physica status solidi. b, Basic research, 187(2), 1995, pp. 337-346
STRUCTURAL STUDIES ON INP GAAS HETEROSTRUCTURES USING MULTIPLE X-RAY-DIFFRACTION/
Authors: MORELHAO SL AVANCI LH CARDOSO LP RIESZ F RAKENNUS K HAKKARAINEN T
Citation: Sl. Morelhao et al., STRUCTURAL STUDIES ON INP GAAS HETEROSTRUCTURES USING MULTIPLE X-RAY-DIFFRACTION/, Vacuum, 46(8-10), 1995, pp. 1013-1015
GROWTH AND CHARACTERIZATION OF AN EPITAXIALLY GROWN ZNSSE MNZNSSE DISTRIBUTED-BRAGG-REFLECTOR/
Authors: SALOKATVE A RAKENNUS K UUSIMAA P PESSA M AHERNE T DORAN JP OGORMAN J HEGARTY J
Citation: A. Salokatve et al., GROWTH AND CHARACTERIZATION OF AN EPITAXIALLY GROWN ZNSSE MNZNSSE DISTRIBUTED-BRAGG-REFLECTOR/, Applied physics letters, 67(3), 1995, pp. 407-409
MOLECULAR-BEAM EPITAXY GROWTH OF MGZNSSE ZNSSE BRAGG MIRRORS CONTROLLED BY IN-SITU OPTICAL REFLECTOMETRY/
Authors: UUSIMAA P RAKENNUS K SALOKATVE A PESSA M AHERNE T DORAN JP OGORMAN J HEGARTY J
Citation: P. Uusimaa et al., MOLECULAR-BEAM EPITAXY GROWTH OF MGZNSSE ZNSSE BRAGG MIRRORS CONTROLLED BY IN-SITU OPTICAL REFLECTOMETRY/, Applied physics letters, 67(15), 1995, pp. 2197-2199
EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES
Authors: BRYS C VERMAERKE F DEMEESTER P VANDAELE P RAKENNUS K SALOKATVE A UUSIMAA P PESSA M BRADLEY AL DORAN JP OGORMAN J HEGARTY J
Citation: C. Brys et al., EPITAXIAL LIFT-OFF OF ZNSE BASED II-VI STRUCTURES, Applied physics letters, 66(9), 1995, pp. 1086-1088
DEVELOPMENT OF MATERIALS FOR BLUE GREEN LIGHT EMITTERS/
Authors: RAKENNUS K UUSIMAA P SMEKALIN K SAVOLAINEN P PESSA M
Citation: K. Rakennus et al., DEVELOPMENT OF MATERIALS FOR BLUE GREEN LIGHT EMITTERS/, Physica scripta. T, 54, 1994, pp. 177-180
EFFECTS OF ANNEALING ON PERFORMANCE OF INP SOLAR-CELLS ON GAAS SUBSTRATES
Authors: LAMMASNIEMI J RAKENNUS K
Citation: J. Lammasniemi et K. Rakennus, EFFECTS OF ANNEALING ON PERFORMANCE OF INP SOLAR-CELLS ON GAAS SUBSTRATES, Solar energy materials and solar cells, 30(4), 1993, pp. 301-307
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