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Results: 1-20 |
Results: 20
THE BEHAVIOR OF RADIATION-INDUCED GATE-OXIDE DEFECTS IN MOSFETS DURING ANNEALING AT 140-DEGREES-C
Authors: PEJOVIC M JAKSIC A RISTIC G
Citation: M. Pejovic et al., THE BEHAVIOR OF RADIATION-INDUCED GATE-OXIDE DEFECTS IN MOSFETS DURING ANNEALING AT 140-DEGREES-C, Journal of non-crystalline solids, 240(1-3), 1998, pp. 182-192
LATENT INTERFACE-TRAP GENERATION IN COMMERCIAL POWER VDMOSFETS
Authors: JAKSIC A PEJOVIC M RISTIC G RAKOVIC S
Citation: A. Jaksic et al., LATENT INTERFACE-TRAP GENERATION IN COMMERCIAL POWER VDMOSFETS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1365-1371
PROCESSES IN N-CHANNEL MOSFETS DURING POSTIRRADIATION THERMAL ANNEALING
Authors: PEJOVIC M JAKSIC A RISTIC G BALJOSEVIC B
Citation: M. Pejovic et al., PROCESSES IN N-CHANNEL MOSFETS DURING POSTIRRADIATION THERMAL ANNEALING, Radiation physics and chemistry, 49(5), 1997, pp. 521-525
PMOS DOSIMETRIC TRANSISTORS WITH 2-LAYER GATE OXIDE
Authors: RISTIC G JAKSIC A PEJOVIC M
Citation: G. Ristic et al., PMOS DOSIMETRIC TRANSISTORS WITH 2-LAYER GATE OXIDE, Sensors and actuators. A, Physical, 63(2), 1997, pp. 129-134
FORMATION AND PASSIVATION OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING
Authors: PEJOVIC M RISTIC G JAKSIC A
Citation: M. Pejovic et al., FORMATION AND PASSIVATION OF INTERFACE TRAPS IN IRRADIATED N-CHANNEL POWER VDMOSFETS DURING THERMAL ANNEALING, Applied surface science, 108(1), 1997, pp. 141-148
CREATION AND PASSIVATION OF INTERFACE TRAPS IN IRRADIATED MOS-TRANSISTORS DURING ANNEALING AT DIFFERENT TEMPERATURES
Authors: PEJOVIC M RISTIC G
Citation: M. Pejovic et G. Ristic, CREATION AND PASSIVATION OF INTERFACE TRAPS IN IRRADIATED MOS-TRANSISTORS DURING ANNEALING AT DIFFERENT TEMPERATURES, Solid-state electronics, 41(5), 1997, pp. 715-720
ANALYSIS OF THE PROCESSES IN POWER MOSFETS DURING GAMMA-RAY IRRADIATION AND SUBSEQUENT THERMAL ANNEALING
Authors: JAKSIC A RISTIC G PEJOVIC M
Citation: A. Jaksic et al., ANALYSIS OF THE PROCESSES IN POWER MOSFETS DURING GAMMA-RAY IRRADIATION AND SUBSEQUENT THERMAL ANNEALING, Physica status solidi. a, Applied research, 155(2), 1996, pp. 371-379
FORMATIVE TIME DETERMINATION IN NITROGEN-FILLED TUBE USING STATISTICAL-METHODS
Authors: PEJOVIC M ZIVKOVIC J MILOSAVLJEVIC C RISTIC G
Citation: M. Pejovic et al., FORMATIVE TIME DETERMINATION IN NITROGEN-FILLED TUBE USING STATISTICAL-METHODS, JPN J A P 1, 34(3), 1995, pp. 1652-1656
TEMPERATURE-INDUCED REBOUND IN AL-GATE NMOS TRANSISTORS
Authors: PEJOVIC M GOLUBOVIC S RISTIC G
Citation: M. Pejovic et al., TEMPERATURE-INDUCED REBOUND IN AL-GATE NMOS TRANSISTORS, IEE proceedings. Circuits, devices and systems, 142(6), 1995, pp. 413-416
SENSITIVITY AND FADING OF PMOS DOSIMETERS WITH THICK GATE OXIDE
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., SENSITIVITY AND FADING OF PMOS DOSIMETERS WITH THICK GATE OXIDE, Sensors and actuators. A, Physical, 51(2-3), 1995, pp. 153-158
EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS
Authors: STOJADINOVIC N PEJOVIC M GOLUBOVIC S RISTIC G DAVIDOVIC V DIMITRIJEV S
Citation: N. Stojadinovic et al., EFFECT OF RADIATION-INDUCED OXIDE-TRAPPED CHARGE ON MOBILITY IN P-CHANNEL MOSFETS, Electronics Letters, 31(6), 1995, pp. 497-498
REBOUND EFFECT IN POWER VDMOSFETS DUE TO LATENT INTERFACE-TRAP GENERATION
Authors: JAKSIC A RISTIC G PEJOVIC M
Citation: A. Jaksic et al., REBOUND EFFECT IN POWER VDMOSFETS DUE TO LATENT INTERFACE-TRAP GENERATION, Electronics Letters, 31(14), 1995, pp. 1198-1199
P-CHANNEL METAL-OXIDE-SEMICONDUCTOR DOSIMETER FADING DEPENDENCIES ON GATE BIAS AND OXIDE THICKNESS
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., P-CHANNEL METAL-OXIDE-SEMICONDUCTOR DOSIMETER FADING DEPENDENCIES ON GATE BIAS AND OXIDE THICKNESS, Applied physics letters, 66(1), 1995, pp. 88-89
TEMPERATURE AND GATE BIAS EFFECTS ON GAMMA-IRRADIATED AL-GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
Authors: PEJOVIC M GOLUBOVIC S RISTIC G ODALOVIC M
Citation: M. Pejovic et al., TEMPERATURE AND GATE BIAS EFFECTS ON GAMMA-IRRADIATED AL-GATE METAL-OXIDE-SEMICONDUCTOR TRANSISTORS, JPN J A P 1, 33(2), 1994, pp. 986-990
ACTIVITY OF ACETAMIDE IN ACETAMIDE-CALCIUM NITRATE MELT SOLUTIONS
Authors: NIKOLIC R RISTIC G
Citation: R. Nikolic et G. Ristic, ACTIVITY OF ACETAMIDE IN ACETAMIDE-CALCIUM NITRATE MELT SOLUTIONS, Journal of solution chemistry, 23(7), 1994, pp. 787-794
ANNEALING OF GAMMA-IRRADIATED AL-GATE NMOS TRANSISTORS
Authors: PEJOVIC M GOLUBOVIC S RISTIC G ODALOVIC M
Citation: M. Pejovic et al., ANNEALING OF GAMMA-IRRADIATED AL-GATE NMOS TRANSISTORS, Solid-state electronics, 37(1), 1994, pp. 215-216
THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS
Authors: GOLUBOVIC S RISTIC G PEJOVIC M DIMITRIJEV S
Citation: S. Golubovic et al., THE ROLE OF INTERFACE TRAPS IN REBOUND MECHANISMS, Physica status solidi. a, Applied research, 143(2), 1994, pp. 333-339
PMOS DOSIMETER WITH 2-LAYER GATE OXIDE OPERATED AT ZERO AND NEGATIVE BIAS
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., PMOS DOSIMETER WITH 2-LAYER GATE OXIDE OPERATED AT ZERO AND NEGATIVE BIAS, Electronics Letters, 30(4), 1994, pp. 295-296
A COMPARISON BETWEEN THERMAL ANNEALING AND UV-RADIATION ANNEALING OF GAMMA-IRRADIATED NMOS TRANSISTORS
Authors: PEJOVIC M RISTIC G GOLUBOVIC S
Citation: M. Pejovic et al., A COMPARISON BETWEEN THERMAL ANNEALING AND UV-RADIATION ANNEALING OF GAMMA-IRRADIATED NMOS TRANSISTORS, Physica status solidi. a, Applied research, 140(1), 1993, pp. 53-57
PMOS TRANSISTORS FOR DOSIMETRIC APPLICATION
Authors: RISTIC G GOLUBOVIC S PEJOVIC M
Citation: G. Ristic et al., PMOS TRANSISTORS FOR DOSIMETRIC APPLICATION, Electronics Letters, 29(18), 1993, pp. 1644-1646
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