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Results: 1-16 |
Results: 16
FIRST PRINCIPLE CALCULATION OF OXYGEN-ADSORPTION ON A (100)SILICON SURFACE - FIRST STAGES OF THE THERMAL-OXIDATION
Authors: ESTEVE A ROUHANI MD ESTEVE D
Citation: A. Esteve et al., FIRST PRINCIPLE CALCULATION OF OXYGEN-ADSORPTION ON A (100)SILICON SURFACE - FIRST STAGES OF THE THERMAL-OXIDATION, Computational materials science, 10(1-4), 1998, pp. 94-98
MONTE-CARLO SIMULATION OF MISMATCH RELAXATION AND ISLAND COALESCENCE DURING HETEROEPITAXIAL GROWTH
Authors: ROUHANI MD MALEK R ESTEVE D
Citation: Md. Rouhani et al., MONTE-CARLO SIMULATION OF MISMATCH RELAXATION AND ISLAND COALESCENCE DURING HETEROEPITAXIAL GROWTH, Thin solid films, 318(1-2), 1998, pp. 61-64
BEYOND THE SOLID-ON-SOLID MODEL - AN ATOMIC DISLOCATION FORMATION MECHANISM
Authors: DELLATORRE J ROUHANI MD MALEK R ESTEVE D LANDA G
Citation: J. Dellatorre et al., BEYOND THE SOLID-ON-SOLID MODEL - AN ATOMIC DISLOCATION FORMATION MECHANISM, Journal of applied physics, 84(10), 1998, pp. 5487-5494
MONTE-CARLO SIMULATION OF THE EFFECT OF INTERSTITIAL ATOMS INTERACTION ON THE HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS
Authors: ROUHANI MD MALEK R GUE AM BOUYSSOU G ESTEVE D
Citation: Md. Rouhani et al., MONTE-CARLO SIMULATION OF THE EFFECT OF INTERSTITIAL ATOMS INTERACTION ON THE HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 82-86
COMPUTER-SIMULATION OF THE GROWTH OF HETEROSTRUCTURE SYSTEMS
Authors: ROUHANI MD MALEK R KERSULIS S MITIN V
Citation: Md. Rouhani et al., COMPUTER-SIMULATION OF THE GROWTH OF HETEROSTRUCTURE SYSTEMS, Microelectronics, 28(8-10), 1997, pp. 1043-1049
SURFACE-MORPHOLOGY DUE TO ENHANCED MIGRATION IN HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS
Authors: ROUHANI MD GUE AM MALEK R BOUYSSOU G ESTEVE D
Citation: Md. Rouhani et al., SURFACE-MORPHOLOGY DUE TO ENHANCED MIGRATION IN HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 37(1-3), 1996, pp. 25-29
SIMULATION OF PHOTOEMISSION CURRENT TO MONITOR THE THIN-FILM GROWTH
Authors: FAZOUAN N ROUHANI MD GUE AM ESTEVE D
Citation: N. Fazouan et al., SIMULATION OF PHOTOEMISSION CURRENT TO MONITOR THE THIN-FILM GROWTH, Surface science, 352, 1996, pp. 1022-1026
SIMULATION OF THIN-FILM GROWTH AND IN-SITU CHARACTERIZATION BY RHEED AND PHOTOEMISSION
Authors: ROUHANI MD FAZOUAN N GUE AM ESTEVE D
Citation: Md. Rouhani et al., SIMULATION OF THIN-FILM GROWTH AND IN-SITU CHARACTERIZATION BY RHEED AND PHOTOEMISSION, Vacuum, 46(8-10), 1995, pp. 931-934
THEORETICAL-ANALYSIS OF THE 2-JUNCTION MONOLITHIC CASCADE HG1-XCDXTE CAAS SOLAR-CELL/
Authors: ROUHANI MD SYLLA A KOUADJA K ESTEVE D
Citation: Md. Rouhani et al., THEORETICAL-ANALYSIS OF THE 2-JUNCTION MONOLITHIC CASCADE HG1-XCDXTE CAAS SOLAR-CELL/, Solid-state electronics, 38(2), 1995, pp. 531-532
COMPUTER OPTIMIZATION OF MULTISPECTRAL SOLAR-CELLS BASED ON GAAS AND HG1-XCDXTE
Authors: ROUHANI MD SYLLA A KOUADJA K ESTEVE D
Citation: Md. Rouhani et al., COMPUTER OPTIMIZATION OF MULTISPECTRAL SOLAR-CELLS BASED ON GAAS AND HG1-XCDXTE, Physica status solidi. a, Applied research, 150(2), 1995, pp. 773-782
LOCALIZED VIBRATIONAL-STATES IN AMORPHOUS-SILICON
Authors: CHEHAIDAR A ROUHANI MD ZWICK A
Citation: A. Chehaidar et al., LOCALIZED VIBRATIONAL-STATES IN AMORPHOUS-SILICON, Journal of non-crystalline solids, 193, 1995, pp. 238-242
ATOMIC-SCALE SIMULATION OF DISLOCATION LO OP FORMATION UNDER IRRADIATION
Authors: ROUHANI MD GUE AM IDRISSISABA H ESTEVE D
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF DISLOCATION LO OP FORMATION UNDER IRRADIATION, Journal de physique. I, 4(3), 1994, pp. 453-466
ROUGHENING AND FACETING IN LATTICE-MISMATCHED HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS - A MONTE-CARLO STUDY
Authors: ROUHANI MD SAHLAOUI M GUE AM ESTEVE D
Citation: Md. Rouhani et al., ROUGHENING AND FACETING IN LATTICE-MISMATCHED HETEROEPITAXIAL GROWTH OF COMPOUND SEMICONDUCTORS - A MONTE-CARLO STUDY, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 200-203
ATOMIC-SCALE SIMULATION OF MICROTECHNOLOG IES
Authors: ROUHANI MD GUE AM CAMON H COHENSOLAL G
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF MICROTECHNOLOG IES, Onde electrique, 74(2), 1994, pp. 14-20
ATOMIC-SCALE SIMULATION OF LATTICE-MISMATCHED HETEROSTRUCTURES - CASEOF CDTE GAAS/
Authors: ROUHANI MD SAHLAOUI M GUE AM ESTEVE D
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF LATTICE-MISMATCHED HETEROSTRUCTURES - CASEOF CDTE GAAS/, Materials science & engineering. B, Solid-state materials for advanced technology, 20(1-2), 1993, pp. 88-90
ATOMIC-SCALE SIMULATION OF INTERFACE DEFECT FORMATION IN THE INITIAL-STAGES OF THIN-FILM GROWTH
Authors: ROUHANI MD GUE AM SAHLAOUI M ESTEVE D
Citation: Md. Rouhani et al., ATOMIC-SCALE SIMULATION OF INTERFACE DEFECT FORMATION IN THE INITIAL-STAGES OF THIN-FILM GROWTH, Thin solid films, 228(1-2), 1993, pp. 326-329
Risultati: 1-16 |