Citation: Jh. Lee et Sw. Rhee, Composition and thickness uniformity of chemical vapor deposited barium strontium titanate films on a patterned structure, EL SOLID ST, 4(1), 2001, pp. F1-F2
Citation: Yb. Park et Sw. Rhee, Bulk and interface properties of low-temperature silicon nitride films deposited by remote plasma enhanced chemical vapor deposition, J MAT S-M E, 12(9), 2001, pp. 515-522
Authors:
Lee, WH
Ko, YK
Choi, JH
Byun, IJ
Kwak, HT
Kim, DH
Rhee, SW
Reucroft, PJ
Lee, JG
Citation: Wh. Lee et al., The effect of carrier gas and H(hfac) on MOCVD Cu films using (hfac)Cu(1,5-COD) as a precursor, J ELEC MAT, 30(8), 2001, pp. 1028-1034
Citation: Yb. Park et Sw. Rhee, AFM study of SINx : H surfaces treated by hydrogen plasma: modification ofmorphological and scaling characteristics, SURF COAT, 137(2-3), 2001, pp. 265-269
Authors:
Park, CD
Rhee, SW
Kim, YJ
Jeon, WS
Jung, DK
Kim, DH
Do, Y
Ri, HC
Citation: Cd. Park et al., Solvate effect on magnetic relaxation in [Mn12O12(O2CCH2CH2Cl)(16)(H2O)(4)] containing complexes, B KOR CHEM, 22(5), 2001, pp. 453-454
Citation: My. Choi et al., Renormalization-group study of gate charge effects in Josephson-junction chains - art. no. 094516, PHYS REV B, 6309(9), 2001, pp. 4516
Citation: Kk. Choi et Sw. Rhee, Chemical vapor deposition of copper film from hexafluoroacetylacetonateCu((I))vinylcyclohexane, THIN SOL FI, 397(1-2), 2001, pp. 70-77
Citation: Yb. Park et Sw. Rhee, Microstructure and initial growth characteristics of the low temperature microcrystalline silicon films on silicon nitride surface, J APPL PHYS, 90(1), 2001, pp. 217-221
Citation: Kk. Choi et Sw. Rhee, Effect of carrier gas on chemical vapor deposition of copper with (hexafluoroacetylacetonate) Cu-(I)(3,3-dimethyl-1-bulene), J ELCHEM SO, 148(7), 2001, pp. C473-C478
Citation: Jh. Lee et Sw. Rhee, Low temperature chemical vapor deposition of (Ba, Sr) TiO3 thin films withTi(mpd)(tmhd)(2) as a Ti source, J ELCHEM SO, 148(6), 2001, pp. C409-C412
Citation: Dh. Kim et al., Metallorganic chemical vapor deposition of Pb(Zr, Ti)O-3 films using a single mixture of metallorganic precursors, J ELCHEM SO, 148(10), 2001, pp. C668-C673
Citation: C. Yi et al., Characterization of deposition process, microstructure and interfacial states of silicon dioxide film using tetraethylorthosilicate/O-2 with various dilution gases, J ELCHEM SO, 148(10), 2001, pp. C679-C684
Citation: C. Yi et al., Effect of back-channel plasma etching on the leakage current of a-Si : H thin film transistors, JPN J A P 1, 39(3A), 2000, pp. 1051-1053
Citation: Sw. Rhee et al., Property of hexafluoroacetylacetonateCu(I) (3,3-dimethyl-1-butene) as a liquid precursor for chemical vapor deposition of copper films, EL SOLID ST, 3(3), 2000, pp. 135-137
Citation: Hu. Kim et Sw. Rhee, Electrical properties of bulk silicon dioxide and SiO2/Si interface formedby tetraethylorthosilicate (TEOS)-oxygen plasma enhanced chemical vapor deposition, J MAT S-M E, 11(8), 2000, pp. 579-586
Citation: Jy. Yun et al., Remote plasma enhanced metalorganic chemical vapor deposition of TiN from tetrakis-dimethyl-amido-titanium, J VAC SCI A, 18(6), 2000, pp. 2822-2826
Authors:
Lee, JH
Kim, JY
Rhee, SW
Yang, DY
Kim, DH
Yang, CH
Han, YK
Hwang, CJ
Citation: Jh. Lee et al., Chemical vapor deposition of Ru thin films by direct liquid injection of Ru(OD)(3) (OD=octanedionate), J VAC SCI A, 18(5), 2000, pp. 2400-2403
Citation: Sw. Rhee et Mj. Tanga, Synthesis of tritium labelled 4P-PDOT, a selective melatonin receptor antagonist, J LABEL C R, 43(9), 2000, pp. 925-932
Citation: Sw. Rhee et al., Electronic and NMR properties of meso-monosubstituted ferrocenylporphyrin:evidence of pi-conjugation between porphyrin and ferrocene, POLYHEDRON, 19(16-17), 2000, pp. 1961-1966