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Results: 1-25/35
Authors:
KAPUR P
BANG DS
MCVITTIE JP
SARASWAT KC
MOUNTSIER T
Citation: P. Kapur et al., METHOD FOR ANGULAR SPUTTER YIELD EXTRACTION FOR HIGH-DENSITY PLASMA CHEMICAL-VAPOR-DEPOSITION SIMULATORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1123-1128
Authors:
SHIEH B
SARASWAT KC
MCVITTIE JP
LIST S
NAG S
ISLAMRAJA M
HAVEMANN RH
Citation: B. Shieh et al., AIR-GAP FORMATION DURING IMD DEPOSITION TO LOWER INTERCONNECT CAPACITANCE, IEEE electron device letters, 19(1), 1998, pp. 16-18
Authors:
BHAT N
SARASWAT KC
Citation: N. Bhat et Kc. Saraswat, CHARACTERIZATION OF BORDER TRAP GENERATION IN RAPID THERMALLY ANNEALED OXIDES DEPOSITED USING SILANE CHEMISTRY, Journal of applied physics, 84(5), 1998, pp. 2722-2726
Authors:
SUBRAMANIAN V
SARASWAT KC
Citation: V. Subramanian et Kc. Saraswat, HIGH-PERFORMANCE GERMANIUM-SEEDED LATERALLY CRYSTALLIZED TFTS FOR VERTICAL DEVICE INTEGRATION, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 1934-1939
Authors:
SUBRAMANIAN V
SARASWAT KC
Citation: V. Subramanian et Kc. Saraswat, OPTIMIZATION OF SILICON-GERMANIUM TFTS THROUGH THE CONTROL OF AMORPHOUS PRECURSOR CHARACTERISTICS, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1690-1695
Authors:
BECK TJ
LOSLEBEN P
SARASWAT KC
Citation: Tj. Beck et al., PIER - AN EARLY TREATMENT OF INTER-PROCESS INTERACTIONS, IEEE transactions on semiconductor manufacturing, 10(1), 1997, pp. 112-120
Authors:
SUBRAMANIAN V
DANKOSKI P
DEGERTEKIN L
KHURIYAKUB BT
SARASWAT KC
Citation: V. Subramanian et al., CONTROLLED 2-STEP SOLID-PHASE CRYSTALLIZATION FOR HIGH-PERFORMANCE POLYSILICON TFT, IEEE electron device letters, 18(8), 1997, pp. 378-381
Authors:
MA SM
MCVITTIE JP
SARASWAT KC
Citation: Sm. Ma et al., PREDICTION OF PLASMA CHARGING INDUCED GATE OXIDE DAMAGE BY PLASMA CHARGING PROBE, IEEE electron device letters, 18(10), 1997, pp. 468-470
Authors:
BHAT N
CAO M
SARASWAT KC
Citation: N. Bhat et al., BIAS TEMPERATURE INSTABILITY IN HYDROGENATED THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1102-1108
Authors:
SUBRAMANIAN V
DEGERTEKIN FL
DANKOSKI P
KHURIYAKUB BT
SARASWAT KC
Citation: V. Subramanian et al., IN-SITU MONITORING OF CRYSTALLINITY AND TEMPERATURE DURING RAPID THERMAL CRYSTALLIZATION OF SILICON ON GLASS, Journal of the Electrochemical Society, 144(6), 1997, pp. 2216-2221
Authors:
JURICHICH S
WOOD SC
SARASWAT KC
Citation: S. Jurichich et al., MANUFACTURING COST OF ACTIVE-MATRIX LIQUID-CRYSTAL DISPLAYS AS A FUNCTION OF PLANT-CAPACITY, IEEE transactions on semiconductor manufacturing, 9(4), 1996, pp. 562-572
Authors:
BHAT N
APTE PP
SARASWAT KC
Citation: N. Bhat et al., CHARGE TRAP GENERATION IN LPCVD OXIDES UNDER HIGH-FIELD STRESSING, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 554-560
Authors:
CAO M
TALWAR S
KRAMER KJ
SIGMON TW
SARASWAT KC
Citation: M. Cao et al., A HIGH-PERFORMANCE POLYSILICON THIN-FILM-TRANSISTOR USING XECL EXCIMER-LASER CRYSTALLIZATION OF PRE-PATTERNED AMORPHOUS SI FILMS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 561-567
Authors:
SMEYS P
GRIFFIN PB
SARASWAT KC
Citation: P. Smeys et al., INFLUENCE OF POST-OXIDATION COOLING RATE ON RESIDUAL-STRESS AND PN-JUNCTION LEAKAGE CURRENT IN LOGOS ISOLATED STRUCTURES, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1989-1993
Authors:
LI JL
MCVITTIE JP
FERZIGER J
SARASWAT KC
DONG J
Citation: Jl. Li et al., OPTIMIZATION OF INTERMETAL DIELECTRIC DEPOSITION MODULE USING SIMULATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1867-1874
Authors:
PARK H
SMEYS P
SAHUL ZH
SARASWAT KC
DUTTON RW
HWANG HJ
Citation: H. Park et al., QUASI-3-DIMENSIONAL MODELING OF SUBMICRON LOCOS STRUCTURES, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 390-401
Authors:
MA SM
MCVITTIE JP
SARASWAT KC
Citation: Sm. Ma et al., EFFECTS OF WAFER TEMPERATURE ON PLASMA CHARGING INDUCED DAMAGE TO MOSGATE OXIDE, IEEE electron device letters, 16(12), 1995, pp. 534-536
Authors:
SMEYS PIL
GRIFFIN PB
SARASWAT KC
Citation: Pil. Smeys et al., MATERIAL PROPERTIES OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FOR MODELING AND CALIBRATING THE SIMULATION OF ADVANCED ISOLATION STRUCTURES, Journal of applied physics, 78(4), 1995, pp. 2837-2842
Authors:
CAO M
ZHAO TM
SARASWAT KC
PLUMMER JD
Citation: M. Cao et al., STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1134-1140
Authors:
CAO M
WANG A
SARASWAT KC
Citation: M. Cao et al., LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX FILMS ON SIO2 - CHARACTERIZATION AND MODELING, Journal of the Electrochemical Society, 142(5), 1995, pp. 1566-1572
Authors:
BANG DS
CAO M
WANG A
SARASWAT KC
KING TJ
Citation: Ds. Bang et al., RESISTIVITY OF BORON AND PHOSPHORUS-DOPED POLYCRYSTALLINE SI1-XGEX FILMS, Applied physics letters, 66(2), 1995, pp. 195-197
Authors:
PEI J
DEGERTEKIN FL
KHURIYAKUB BT
SARASWAT KC
Citation: J. Pei et al., IN-SITU THIN-FILM THICKNESS MEASUREMENT WITH ACOUSTIC LAMB WAVES, Applied physics letters, 66(17), 1995, pp. 2177-2179
Authors:
SARASWAT KC
APTE PP
BOOTH L
CHEN YZ
DANKOSKI PCP
DEGERTEKIN FL
FRANKLIN GF
KHURIYAKUB BT
MOSLEHI MM
SCHAPER C
GYUGYI PJ
LEE YJ
PEI J
WOOD SC
Citation: Kc. Saraswat et al., RAPID THERMAL MULTIPROCESSING FOR A PROGRAMMABLE FACTORY FOR ADAPTABLE MANUFACTURING OF ICS, IEEE transactions on semiconductor manufacturing, 7(2), 1994, pp. 159-175
Authors:
CAO M
ZHAO TM
SARASWAT KC
PLUMMER JD
Citation: M. Cao et al., A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 15(8), 1994, pp. 304-306
Authors:
ZHAO TM
CAO M
SARASWAT KC
PLUMMER JD
Citation: Tm. Zhao et al., A VERTICAL SUBMICRON POLYSILICON THIN-FILM-TRANSISTOR USING A LOW-TEMPERATURE PROCESS, IEEE electron device letters, 15(10), 1994, pp. 415-417