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Results: 1-25 | 26-27
Results: 1-25/27
WEAK-FIELD MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN IN0.53GA0.47AS INP HETEROSTRUCTURES IN THE PERSISTENT PHOTOCONDUCTIVITY REGIME/
Authors: BYKANOV DD KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Dd. Bykanov et al., WEAK-FIELD MAGNETORESISTANCE OF 2-DIMENSIONAL ELECTRONS IN IN0.53GA0.47AS INP HETEROSTRUCTURES IN THE PERSISTENT PHOTOCONDUCTIVITY REGIME/, Semiconductors (Woodbury, N.Y.), 32(9), 1998, pp. 985-991
DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS IN THE ZERO-BIAS ANOMALY REGION - I - CONTACTS TO N-GAAS1-XSBX/
Authors: POLYANSKAYA TA ALLEN TY NAZHMUDINOV KG YASTREBOV SG SAVELEV IG
Citation: Ta. Polyanskaya et al., DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS IN THE ZERO-BIAS ANOMALY REGION - I - CONTACTS TO N-GAAS1-XSBX/, Semiconductors, 32(5), 1998, pp. 513-516
DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS NEAR THE ZERO-BIAS ANOMALY - II - CONTACTS TO P-GAAS1-XSBX/
Authors: POLYANSKAYA TA ALLEN TY NAZHMUDINOV KG SAVELEV IG
Citation: Ta. Polyanskaya et al., DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS NEAR THE ZERO-BIAS ANOMALY - II - CONTACTS TO P-GAAS1-XSBX/, Semiconductors, 32(5), 1998, pp. 517-520
ENERGY RELAXATION IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP VIA ELECTRON-ACOUSTIC PHONON INTERACTION/
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG POLYANSKAYA TA PODOR B REMENYI G KOVACS G
Citation: Am. Kreshchuk et al., ENERGY RELAXATION IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP VIA ELECTRON-ACOUSTIC PHONON INTERACTION/, Acta Physica Polonica. A, 94(3), 1998, pp. 415-420
THE NONLINEAR EFFECTS IN 2DEG CONDUCTIVITY INVESTIGATION BY AN ACOUSTIC METHOD
Authors: DRICHKO IL DIAKONOV AM KAGAN VD KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., THE NONLINEAR EFFECTS IN 2DEG CONDUCTIVITY INVESTIGATION BY AN ACOUSTIC METHOD, Physica status solidi. b, Basic research, 205(1), 1998, pp. 357-361
SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Am. Kreshchuk et al., SPIN-ORBIT-SPLITTING AND WEAK ANTILOCALIZATION IN AN ASYMMETRIC IN0.53GA0.47AS INP QUANTUM-WELL/, Semiconductor science and technology, 13(4), 1998, pp. 384-388
ELECTRON LOCALIZATION IN SOUND-ABSORPTION OSCILLATIONS IN THE QUANTUMHALL-EFFECT REGIME
Authors: DRICHKO IL DYAKONOV AM KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., ELECTRON LOCALIZATION IN SOUND-ABSORPTION OSCILLATIONS IN THE QUANTUMHALL-EFFECT REGIME, Semiconductors, 31(4), 1997, pp. 384-390
SPIN RELAXATION AND WEAK-LOCALIZATION OF 2-DIMENSIONAL ELECTRONS IN ASYMMETRIC QUANTUM-WELLS
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG
Citation: Am. Kreshchuk et al., SPIN RELAXATION AND WEAK-LOCALIZATION OF 2-DIMENSIONAL ELECTRONS IN ASYMMETRIC QUANTUM-WELLS, Semiconductors, 31(4), 1997, pp. 391-398
HEATING OF A 2-DIMENSIONAL ELECTRON-GAS BY THE ELECTRIC-FIELD OF A SURFACE-ACOUSTIC-WAVE
Authors: DRICHKO IL DYAKONOV AM KAGAN VD KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., HEATING OF A 2-DIMENSIONAL ELECTRON-GAS BY THE ELECTRIC-FIELD OF A SURFACE-ACOUSTIC-WAVE, Semiconductors, 31(11), 1997, pp. 1170-1177
ACTIVATED TRANSPORT IN MAGNETIC-FIELD-INDUCED INSULATING PHASE IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP HETEROSTRUCTURES/
Authors: PODOR B GOMBOS G REMENYI G KOVACS G SAVELEV IG NOVIKOV SV
Citation: B. Podor et al., ACTIVATED TRANSPORT IN MAGNETIC-FIELD-INDUCED INSULATING PHASE IN 2-DIMENSIONAL ELECTRON-GAS IN INGAAS INP HETEROSTRUCTURES/, Acta Physica Polonica. A, 92(5), 1997, pp. 945-949
QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY BY ELECTRICAL PULSES
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG
Citation: Am. Kreshchuk et al., QUENCHING OF PERSISTENT PHOTOCONDUCTIVITY BY ELECTRICAL PULSES, Semiconductors, 30(5), 1996, pp. 497-500
EFFECT OF A STRONG ELECTRIC-FIELD ON THE PROPERTIES OF A NONEQUILIBRIUM, 2-DIMENSIONAL ELECTRON-GAS IN NONIDEAL HETEROSTRUCTURES
Authors: KRESHCHUK AM NOVIKOV SV SAVELEV IG
Citation: Am. Kreshchuk et al., EFFECT OF A STRONG ELECTRIC-FIELD ON THE PROPERTIES OF A NONEQUILIBRIUM, 2-DIMENSIONAL ELECTRON-GAS IN NONIDEAL HETEROSTRUCTURES, Semiconductors, 30(5), 1996, pp. 501-506
SPIN SPLITTING OF THE LANDAU-LEVELS AND EXCHANGE INTERACTION OF A NONIDEAL 2-DIMENSIONAL ELECTRON-GAS IN INXGA1-XAS INP HETEROSTRUCTURES/
Authors: SAVELEV IG KRESHCHUK AM NOVIKOV SV SHIK AY REMENYI G KOVACS G PODOR B GOMBOS G
Citation: Ig. Savelev et al., SPIN SPLITTING OF THE LANDAU-LEVELS AND EXCHANGE INTERACTION OF A NONIDEAL 2-DIMENSIONAL ELECTRON-GAS IN INXGA1-XAS INP HETEROSTRUCTURES/, Journal of physics. Condensed matter, 8(46), 1996, pp. 9025-9036
LOW-TEMPERATURE INVESTIGATION OF THE 2DEG CONDUCTIVITY BY ACOUSTIC METHODS
Authors: DRICHKO IL DIAKONOV AM KAGAN VD KRESHCHUK AM POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV
Citation: Il. Drichko et al., LOW-TEMPERATURE INVESTIGATION OF THE 2DEG CONDUCTIVITY BY ACOUSTIC METHODS, Czechoslovak journal of Physics, 46, 1996, pp. 2465-2466
WIGNER-LIKE PHASE-TRANSITION IN THE STRONG DISORDER LIMIT
Authors: REMENYI G KOVACS G SAVELEV IG GOMBOS G PODOR B
Citation: G. Remenyi et al., WIGNER-LIKE PHASE-TRANSITION IN THE STRONG DISORDER LIMIT, Czechoslovak journal of Physics, 46, 1996, pp. 2527-2528
DETERMINATION OF THE PROPERTIES OF THE 2D ELECTRON-GAS IN INGAAS INP STRUCTURES BY ACOUSTIC METHODS UNDER THE CONDITIONS OF THE QUANTUM HALL-EFFECT/
Authors: DRICHKO IL DYAKONOV AM KAGAN VD KRESHCHUK AM KIPSHIDZE GD POLYANSKAYA TA SAVELEV IG SMIRNOV IY SUSLOV AV SHIK AY
Citation: Il. Drichko et al., DETERMINATION OF THE PROPERTIES OF THE 2D ELECTRON-GAS IN INGAAS INP STRUCTURES BY ACOUSTIC METHODS UNDER THE CONDITIONS OF THE QUANTUM HALL-EFFECT/, Semiconductors, 29(7), 1995, pp. 677-679
WIGNER CRYSTALLIZATION IN INGAAS INP HETEROSTRUCTURES WITH A STRONG DISORDER/
Authors: KOVACS G REMENYI G GOMBOS G SAVELEV IG KRESHCHUK AM HEGMAN N PODOR B
Citation: G. Kovacs et al., WIGNER CRYSTALLIZATION IN INGAAS INP HETEROSTRUCTURES WITH A STRONG DISORDER/, Acta Physica Polonica. A, 88(4), 1995, pp. 783-786
QUANTUM TRANSPORT EFFECTS IN A 2-DIMENSIONAL ELECTRON-GAS AS A TOOL FOR THE INVESTIGATION OF HETEROINTERFACES
Authors: KRESHCHUK AM NOVIKOV SV POLYANSKAYA TA SAVELEV IG SHIK AY
Citation: Am. Kreshchuk et al., QUANTUM TRANSPORT EFFECTS IN A 2-DIMENSIONAL ELECTRON-GAS AS A TOOL FOR THE INVESTIGATION OF HETEROINTERFACES, Journal of crystal growth, 146(1-4), 1995, pp. 153-158
RELATIONSHIP BETWEEN GROWTH-CONDITIONS AND HETEROJUNCTION QUALITY IN INP IN1-XGAXAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/
Authors: BYSTROV SD TUAN L NOVIKOV SV SAVELEV IG
Citation: Sd. Bystrov et al., RELATIONSHIP BETWEEN GROWTH-CONDITIONS AND HETEROJUNCTION QUALITY IN INP IN1-XGAXAS SELECTIVELY DOPED HETEROSTRUCTURES GROWN BY LIQUID-PHASE EPITAXY/, Semiconductors, 28(2), 1994, pp. 180-182
QUANTUM WIRES WITH CONTROLLABLE CONDUCTING-CHANNEL WIDTH BASED ON IN0.53GA0.47AS INP HETEROSTRUCTURES/
Authors: DROZDOV SV KIPSHIZDE GD KRESHCHUK AM KULAGINA MM NOVIKOV SV SAVELEV IG
Citation: Sv. Drozdov et al., QUANTUM WIRES WITH CONTROLLABLE CONDUCTING-CHANNEL WIDTH BASED ON IN0.53GA0.47AS INP HETEROSTRUCTURES/, Semiconductors, 28(2), 1994, pp. 183-187
SHUBNIKOV-DEHASS OSCILLATIONS IN A NONUNIFORM 2D ELECTRON-GAS
Authors: BYSTROV SD KRESHCHUK AM LE TA NOVIKOV SV POLYANSKAYA TA SAVELEV IG SHIK AY
Citation: Sd. Bystrov et al., SHUBNIKOV-DEHASS OSCILLATIONS IN A NONUNIFORM 2D ELECTRON-GAS, Semiconductors, 28(1), 1994, pp. 55-59
QUANTUM WIRES WITH THE TUNABLE WIDTH OF CONDUCTING CHANNEL IN IN0.53GA0.47AS INP HETEROSTRUCTURES/
Authors: KRESCHUK AM KULAGINA MM NOVIKOV SV SAVELEV IG SHIK A KIPSHIDZE GD
Citation: Am. Kreschuk et al., QUANTUM WIRES WITH THE TUNABLE WIDTH OF CONDUCTING CHANNEL IN IN0.53GA0.47AS INP HETEROSTRUCTURES/, Superlattices and microstructures, 16(2), 1994, pp. 153-156
PREPARATION OF FULLERENE FILMS ON GAAS SE MICONDUCTING SUBSTRATES
Authors: KUNITSYN AE KOZYREV SV NOVIKOV SV SAVELEV IG CHALDYSHEV VV SHARONOVA LV
Citation: Ae. Kunitsyn et al., PREPARATION OF FULLERENE FILMS ON GAAS SE MICONDUCTING SUBSTRATES, Fizika tverdogo tela, 36(9), 1994, pp. 2573-2579
FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES
Authors: BER BY BYSTROV SD ZUSHINSKII DA KORNYAKOVA OV TUAN L NOVIKOV SV SAVELEV IG TRETYAKOV VV CHALDYSHEV VV SHMARTSEV YV
Citation: By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820
DOPING OF EPITAXIAL GAAS FILMS BY A ZN ACCEPTOR IMPURITY DURING LIQUID-PHASE EPITAXY FROM GA-BI MOLTEN SOLUTIONS
Authors: TUAN L NOVIKOV SV SAVELEV IG SHELKOVNIKOV DN SHMARTSEV YV
Citation: L. Tuan et al., DOPING OF EPITAXIAL GAAS FILMS BY A ZN ACCEPTOR IMPURITY DURING LIQUID-PHASE EPITAXY FROM GA-BI MOLTEN SOLUTIONS, Semiconductors, 27(6), 1993, pp. 546-550
Risultati: 1-25 | 26-27