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Results: 1-25 | 26-50 | 51-53
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ELECTRICAL-TRANSPORT PROPERTIES OF P-GAN
Authors: NAKAYAMA H HACKE P KHAN MRH DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: H. Nakayama et al., ELECTRICAL-TRANSPORT PROPERTIES OF P-GAN, JPN J A P 2, 35(3A), 1996, pp. 282-284
RESONANCE OF ELECTRONIC STATES AND INDIRECT EXCITONS IN AN ASYMMETRICTRIPLE QUANTUM-WELL STRUCTURE
Authors: SAWAKI N KIDOKORO T OHSAKI S SUZUKI T HARA K
Citation: N. Sawaki et al., RESONANCE OF ELECTRONIC STATES AND INDIRECT EXCITONS IN AN ASYMMETRICTRIPLE QUANTUM-WELL STRUCTURE, Physica. B, Condensed matter, 227(1-4), 1996, pp. 384-386
TUNNELING AND INTERFERENCE OF ELECTRONIC STATES IN DOUBLE-QUANTUM-WELL
Authors: YAMAGUCHI M MASUKAWA K IKEDO N SAWAKI N FUJII K GOTO H
Citation: M. Yamaguchi et al., TUNNELING AND INTERFERENCE OF ELECTRONIC STATES IN DOUBLE-QUANTUM-WELL, Physica. B, Condensed matter, 227(1-4), 1996, pp. 387-389
ENHANCED DISSOLUTION OF SO2 INTO DEWWATER BY FORMING HYDROXYALKANESULFONATE
Authors: KATAGIRI Y SAWAKI N ARAI Y OKOCHI H IGAWA M
Citation: Y. Katagiri et al., ENHANCED DISSOLUTION OF SO2 INTO DEWWATER BY FORMING HYDROXYALKANESULFONATE, Chemistry Letters, (3), 1996, pp. 197-198
RAMAN-SCATTERING STUDY OF THE IMMISCIBLE REGION IN INGAASP GROWN BY LPE ON (100)GAAS AND (111)GAAS
Authors: SUGIURA T HASE N HIRAMATSU K SAWAKI N
Citation: T. Sugiura et al., RAMAN-SCATTERING STUDY OF THE IMMISCIBLE REGION IN INGAASP GROWN BY LPE ON (100)GAAS AND (111)GAAS, Journal of electronic materials, 25(4), 1996, pp. 695-699
DEEP LEVELS IN THE UPPER BAND-GAP REGION OF LIGHTLY MG-DOPED GAN
Authors: HACKE P NAKAYAMA H DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: P. Hacke et al., DEEP LEVELS IN THE UPPER BAND-GAP REGION OF LIGHTLY MG-DOPED GAN, Applied physics letters, 68(10), 1996, pp. 1362-1364
PICOSECOND PHOTOLUMINESCENCE STUDY OF RELAXATION PHENOMENA OF HOT-ELECTRONS IN A QUASI-ONE-DIMENSIONAL STRUCTURE
Authors: NIWA S SUZUKI T SAWAKI N
Citation: S. Niwa et al., PICOSECOND PHOTOLUMINESCENCE STUDY OF RELAXATION PHENOMENA OF HOT-ELECTRONS IN A QUASI-ONE-DIMENSIONAL STRUCTURE, JPN J A P 1, 34(8B), 1995, pp. 4515-4518
SCHOTTKY-BARRIER ON N-TYPE AL0.14GA0.86N GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: KHAN MRH NAKAYAMA H DETCHPROHM T HIRAMATSU K SAWAKI N
Citation: Mrh. Khan et al., SCHOTTKY-BARRIER ON N-TYPE AL0.14GA0.86N GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, JPN J A P 1, 34(12A), 1995, pp. 6375-6376
FABRICATION OF GAN HEXAGONAL PYRAMIDS ON DOT-PATTERNED GAN SAPPHIRE SUBSTRATES VIA SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY/
Authors: KITAMURA S HIRAMATSU K SAWAKI N
Citation: S. Kitamura et al., FABRICATION OF GAN HEXAGONAL PYRAMIDS ON DOT-PATTERNED GAN SAPPHIRE SUBSTRATES VIA SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY/, JPN J A P 2, 34(9B), 1995, pp. 1184-1186
THE BARRIER HEIGHT AND INTERFACE EFFECT OF A AU-N-GAN SCHOTTKY DIODE
Authors: KHAN MRH DETCHPROHM T HACKE P HIRAMATSU K SAWAKI N
Citation: Mrh. Khan et al., THE BARRIER HEIGHT AND INTERFACE EFFECT OF A AU-N-GAN SCHOTTKY DIODE, Journal of physics. D, Applied physics, 28(6), 1995, pp. 1169-1174
NEGATIVE MAGNETORESISTANCE IN SI ATOMIC-LAYER-DOPED GAAS
Authors: GOTO H SHI W SUZUKI T SAWAKI N ITO H HARA K
Citation: H. Goto et al., NEGATIVE MAGNETORESISTANCE IN SI ATOMIC-LAYER-DOPED GAAS, Journal of crystal growth, 150(1-4), 1995, pp. 271-276
ON THE ELECTRON-MOBILITY IN QUASI-ONE-DIMENSIONAL STRUCTURES FABRICATED BY HOLOGRAPHIC LITHOGRAPHY AND WET CHEMICAL ETCHING
Authors: NIWA S OTA H SUZUKI T GOTO H SAWAKI N
Citation: S. Niwa et al., ON THE ELECTRON-MOBILITY IN QUASI-ONE-DIMENSIONAL STRUCTURES FABRICATED BY HOLOGRAPHIC LITHOGRAPHY AND WET CHEMICAL ETCHING, JPN J A P 1, 33(12B), 1994, pp. 7180-7183
CHARACTERIZATION OF THE SHALLOW AND DEEP LEVELS IN SI DOPED GAN GROWNBY METAL-ORGANIC VAPOR-PHASE EPITAXY
Authors: HACKE P MAEKAWA A KOIDE N HIRAMATSU K SAWAKI N
Citation: P. Hacke et al., CHARACTERIZATION OF THE SHALLOW AND DEEP LEVELS IN SI DOPED GAN GROWNBY METAL-ORGANIC VAPOR-PHASE EPITAXY, JPN J A P 1, 33(12A), 1994, pp. 6443-6447
ELECTRON-MOBILITY IN QUASI-ONE-DIMENSIONAL STRUCTURES
Authors: SAWAKI N SUGIMOTO R HORI T
Citation: N. Sawaki et al., ELECTRON-MOBILITY IN QUASI-ONE-DIMENSIONAL STRUCTURES, Semiconductor science and technology, 9(5), 1994, pp. 946-950
RAMAN-SCATTERING STUDY OF TO PHONON MODES IN INGAASP GAAS
Authors: SUGIURA T HASE N GOTO H HIRAMATSU K SAWAKI N
Citation: T. Sugiura et al., RAMAN-SCATTERING STUDY OF TO PHONON MODES IN INGAASP GAAS, Semiconductor science and technology, 9(10), 1994, pp. 1800-1804
AUTOCOMPENSATION IN SI PLANAR-DOPED GAAS
Authors: SUZUKI T GOTO H SAWAKI N ITO H HARA K
Citation: T. Suzuki et al., AUTOCOMPENSATION IN SI PLANAR-DOPED GAAS, Applied surface science, 82-3, 1994, pp. 103-108
METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND CHARACTERISTICS OF MG-DOPED GAN USING GAN SUBSTRATES
Authors: DETCHPROHM T HIRAMATSU K SAWAKI N AKASAKI I
Citation: T. Detchprohm et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH AND CHARACTERISTICS OF MG-DOPED GAN USING GAN SUBSTRATES, Journal of crystal growth, 145(1-4), 1994, pp. 192-196
METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF (INXGA1-XN GAN)(N) LAYEREDSTRUCTURES AND REDUCTION OF INDIUM DROPLETS/
Authors: SHIMIZU M HIRAMATSU K SAWAKI N
Citation: M. Shimizu et al., METALORGANIC VAPOR-PHASE EPITAXY GROWTH OF (INXGA1-XN GAN)(N) LAYEREDSTRUCTURES AND REDUCTION OF INDIUM DROPLETS/, Journal of crystal growth, 145(1-4), 1994, pp. 209-213
SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: KATO Y KITAMURA S HIRAMATSU K SAWAKI N
Citation: Y. Kato et al., SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 144(3-4), 1994, pp. 133-140
THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES
Authors: DETCHPROHM T HIRAMATSU K SAWAKI N AKASAKI I
Citation: T. Detchprohm et al., THE HOMOEPITAXY OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY USING GAN SUBSTRATES, Journal of crystal growth, 137(1-2), 1994, pp. 170-174
DEEP CENTER SCATTERING POTENTIAL IN INGAP
Authors: ZHU QS HIRAMATSU K SAWAKI N AKASAKI I LIU XN
Citation: Qs. Zhu et al., DEEP CENTER SCATTERING POTENTIAL IN INGAP, Journal of applied physics, 76(11), 1994, pp. 7410-7414
ANALYSIS OF DEEP LEVELS IN N-TYPE GAN BY TRANSIENT CAPACITANCE METHODS
Authors: HACKE P DETCHPROHM T HIRAMATSU K SAWAKI N TADATOMO K MIYAKE K
Citation: P. Hacke et al., ANALYSIS OF DEEP LEVELS IN N-TYPE GAN BY TRANSIENT CAPACITANCE METHODS, Journal of applied physics, 76(1), 1994, pp. 304-309
RAMAN-SCATTERING OF INGAASP LATTICE-MATCHED TO GAAS IN THE REGION OF IMMISCIBILITY
Authors: SUGIURA T HASE N GOTO H TANAKA S HIRAMATSU K SAWAKI N AKASAKI I
Citation: T. Sugiura et al., RAMAN-SCATTERING OF INGAASP LATTICE-MATCHED TO GAAS IN THE REGION OF IMMISCIBILITY, JPN J A P 1, 32(6A), 1993, pp. 2718-2721
GROWTH OF SINGLE-CRYSTAL ALXGA1-XN FILMS ON SI SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
Authors: HIROSAWA K HIRAMATSU K SAWAKI N AKASAKI I
Citation: K. Hirosawa et al., GROWTH OF SINGLE-CRYSTAL ALXGA1-XN FILMS ON SI SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY, JPN J A P 2, 32(8A), 1993, pp. 120001039-120001042
MODULATION OF OPTICAL-SPECTRA IN AN ASYMMETRIC TRIPLE QUANTUM-WELL STRUCTURE
Authors: FUKUTA S GOTO H SAWAKI N SUZUKI T ITO H HARA K
Citation: S. Fukuta et al., MODULATION OF OPTICAL-SPECTRA IN AN ASYMMETRIC TRIPLE QUANTUM-WELL STRUCTURE, Semiconductor science and technology, 8(10), 1993, pp. 1881-1884
Risultati: 1-25 | 26-50 | 51-53