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Results:
1-15
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Results: 15
Authors:
SELMI L
PAVESI M
WONG HSP
ACOVIC A
SANGIORGI E
Citation: L. Selmi et al., MONITORING HOT-CARRIER DEGRADATION IN SOI MOSFETS BY HOT-CARRIER LUMINESCENCE TECHNIQUES, I.E.E.E. transactions on electron devices, 45(5), 1998, pp. 1135-1139
Authors:
SELMI L
MASTRAPASQUA M
BOULIN DM
BUDE JD
PAVESI M
SANGIORGI E
PINTO MR
Citation: L. Selmi et al., VERIFICATION OF ELECTRON DISTRIBUTIONS IN SILICON BY MEANS OF HOT-CARRIER LUMINESCENCE MEASUREMENTS, I.E.E.E. transactions on electron devices, 45(4), 1998, pp. 802-808
Authors:
SELMI L
GHETTI A
BEZ R
SANGIORGI E
Citation: L. Selmi et al., TRADE-OFFS BETWEEN TUNNELING AND HOT-CARRIER INJECTION IN SHORT-CHANNEL FLOATING-GATE MOSFETS, Microelectronic engineering, 36(1-4), 1997, pp. 293-296
Authors:
FISCHER B
GHETTI A
SELMI L
BEZ R
SANGIORGI E
Citation: B. Fischer et al., BIAS AND TEMPERATURE-DEPENDENCE OF HOMOGENEOUS HOT-ELECTRON INJECTIONFROM SILICON INTO SILICON DIOXIDE AT LOW VOLTAGES, I.E.E.E. transactions on electron devices, 44(2), 1997, pp. 288-296
Authors:
FISCHER B
SELMI L
GHETTI A
SANGIORGI E
Citation: B. Fischer et al., ELECTRON INJECTION INTO THE GATE OXIDE OF MOS STRUCTURES AT LIQUID-NITROGEN TEMPERATURE - MEASUREMENT AND SIMULATION, Journal de physique. IV, 6(C3), 1996, pp. 19-24
Authors:
BEGIN M
GHANNOUCHI FM
BEAUREGARD F
SELMI L
RICCO B
Citation: M. Begin et al., CHARACTERIZATION OF THE TRANSIENT-BEHAVIOR OF A GAAS-MESFET USING DYNAMIC I-V AND S-PARAMETER MEASUREMENTS, IEEE transactions on instrumentation and measurement, 45(1), 1996, pp. 231-237
Authors:
ESSENI D
SELMI L
SANGIORGI E
BEZ R
RICCO B
Citation: D. Esseni et al., TEMPERATURE-DEPENDENCE OF GATE AND SUBSTRATE CURRENTS IN THE CHE CROSSOVER REGIME, IEEE electron device letters, 16(11), 1995, pp. 506-508
Authors:
SELMI L
SANGIORGI E
BEZ R
Citation: L. Selmi et al., NONLOCAL EFFECTS IN P-MOSFET SUBSTRATE HOT-HOLE INJECTION EXPERIMENTS, IEEE electron device letters, 16(10), 1995, pp. 442-444
Authors:
SELMI L
Citation: L. Selmi, SILICON LUMINESCENCE TECHNIQUES FOR THE CHARACTERIZATION OF HOT-CARRIER AND DEGRADATION PHENOMENA IN MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 249-256
Authors:
SELMI L
RICCO B
Citation: L. Selmi et B. Ricco, FREQUENCY-RESOLVED MEASUREMENTS FOR THE CHARACTERIZATION OF MOSFET PARAMETERS AT LOW LONGITUDINAL-FIELD, I.E.E.E. transactions on electron devices, 42(2), 1995, pp. 315-320
Authors:
SELMI L
FIEGNA C
BEZ R
Citation: L. Selmi et al., CORRELATION BETWEEN SUBSTRATE HOT-ELECTRON ENERGY AND HOMOGENEOUS DEGRADATION IN N-MOSFETS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1677-1679
Authors:
FIEGNA C
SANGIORGI E
SELMI L
Citation: C. Fiegna et al., OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE - REPLY, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1681-1683
Authors:
MENOZZI R
COVA P
SELMI L
Citation: R. Menozzi et al., EXPERIMENTAL APPLICATION OF A NOVEL TECHNIQUE TO EXTRACT GATE BIAS DEPENDENT SOURCE AND DRAIN PARASITIC RESISTANCES OF GAAS-MESFETS, Solid-state electronics, 36(7), 1993, pp. 1083-1084
Authors:
FIEGNA C
SANGIORGI E
SELMI L
Citation: C. Fiegna et al., OXIDE-FIELD DEPENDENCE OF ELECTRON INJECTION FROM SILICON INTO SILICON DIOXIDE, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2018-2022
Authors:
SELMI L
RICCO B
Citation: L. Selmi et B. Ricco, DESIGN OF AN X-BAND TRANSFORMER-COUPLED AMPLIFIER WITH IMPROVED STABILITY AND LAYOUT, IEEE journal of solid-state circuits, 28(6), 1993, pp. 701-703
Risultati:
1-15
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