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Results:
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Results: 25
Authors:
MIMKES J
SESTAKOVA V
NASSR KM
LUBBERS M
STEPANEK B
Citation: J. Mimkes et al., DIFFUSION MOBILITY AND DEFECT ANALYSIS IN GASB, Journal of crystal growth, 187(3-4), 1998, pp. 355-362
Authors:
SESTAKOVA V
STEPANEK B
SESTAK J
Citation: V. Sestakova et al., TE-DOPED GASB CRYSTALS GROWN IN IONIZED HYDROGEN ATMOSPHERE, Journal of crystal growth, 181(3), 1997, pp. 290-292
Authors:
STEPANEK B
SESTAKOVA V
SESTAK J
Citation: B. Stepanek et al., MORE PROGRESSIVE TECHNOLOGY OF GASB SINGLE-CRYSTAL GROWTH, Czechoslovak journal of Physics, 47(7), 1997, pp. 693-697
Authors:
HUBIK P
MARES JJ
KRISTOFIK J
SESTAKOVA V
STEPANEK B
Citation: P. Hubik et al., DEEP DONORS IN TELLURIUM AND SULFUR CODOPED GASB, Semiconductor science and technology, 11(7), 1996, pp. 989-995
Authors:
SESTAKOVA V
STEPANEK B
MARES JJ
SESTAK J
Citation: V. Sestakova et al., DECREASE IN FREE-CARRIER CONCENTRATION IN GASB CRYSTALS USING AN IONIZED HYDROGEN ATMOSPHERE, Materials chemistry and physics, 45(1), 1996, pp. 39-42
Authors:
SESTAKOVA V
STEPANEK B
SESTAK J
Citation: V. Sestakova et al., PROPERTIES OF DOPED GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD, Crystal research and technology, 31(7), 1996, pp. 929-934
Authors:
SRNANEK R
NEMETH S
KOVAC J
KICIN S
GRIETENS B
BORGHS G
NOVAK J
SESTAKOVA V
PEKAREK L
Citation: R. Srnanek et al., CLASSIFICATION OF MORPHOLOGICAL DEFECTS ON GAAS ALASSB/GASB STRUCTURES PREPARED BY MBE/, Journal of crystal growth, 165(1-2), 1996, pp. 156-158
Authors:
SESTAKOVA V
STEPANEK B
SESTAK J
Citation: V. Sestakova et al., VARIOUS METHODS FOR THE GROWTH OF GASB SINGLE-CRYSTALS, Journal of crystal growth, 165(1-2), 1996, pp. 159-162
Authors:
SESTAK J
STEPANEK B
YOKOKAWA H
SESTAKOVA V
Citation: J. Sestak et al., COPPER SOLUBILITY AND DISTRIBUTION IN DOPED GASB SINGLE-CRYSTALS, Journal of thermal analysis, 43(2), 1995, pp. 389-397
Authors:
MOISEEV G
VATOLIN N
SESTAK J
SESTAKOVA V
Citation: G. Moiseev et al., ESTIMATION OF MELTING (DECOMPOSITION) HEAT OF SOME COMPOUNDS IN THE Y-BA-CU-O SYSTEM, Journal of thermal analysis, 43(2), 1995, pp. 477-488
Authors:
SESTAK J
SESTAKOVA V
ZIVKOVIC Z
ZIVKOVIC D
Citation: J. Sestak et al., ESTIMATION OF ACTIVITY DATA FOR THE GA-SB, GA-S AND SB-S SYSTEMS REGARDING THE DOPED GASB SEMICONDUCTOR CRYSTALS, Pure and applied chemistry, 67(11), 1995, pp. 1885-1890
Authors:
SESTAKOVA V
STEPANEK B
Citation: V. Sestakova et B. Stepanek, DOPING OF GASB SINGLE-CRYSTALS WITH VARIOUS ELEMENTS, Journal of crystal growth, 146(1-4), 1995, pp. 87-91
Authors:
MARES JJ
HUBIK P
KRISTOFIK J
STEPANEK B
SESTAKOVA V
PEKAREK L
Citation: Jj. Mares et al., ELECTRICAL-PROPERTIES OF MN-DOPED GASB, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 134-137
Authors:
SESTAKOVA V
STEPANEK B
Citation: V. Sestakova et B. Stepanek, COPPER DOPING OF GASB SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 138-141
Authors:
STEPANEK B
HUBIK P
MARES JJ
KRISTOFIK J
SESTAKOVA V
PEKAREK L
SESTAK J
Citation: B. Stepanek et al., MANGANESE-DOPED GASB SINGLE-CRYSTALS GROWN BY THE CZOCHRALSKI METHOD, Semiconductor science and technology, 9(5), 1994, pp. 1138-1142
Authors:
STEPANEK B
SESTAKOVA V
SESTAK J
LEITNER J
Citation: B. Stepanek et al., THERMODYNAMIC THEORY FOR GASB SINGLE-CRYSTALS DOPED WITH SULFUR, Semiconductor science and technology, 9(4), 1994, pp. 341-344
Authors:
STEPANEK B
SESTAKOVA V
KRISTOFIK J
Citation: B. Stepanek et al., DOPING OF GASB SINGLE-CRYSTALS WITH VOLATILE ELEMENTS, Crystal research and technology, 29(1), 1994, pp. 19-23
Authors:
SESTAKOVA V
STEPANEK B
MARES JJ
SESTAK J
Citation: V. Sestakova et al., HYDROGEN PASSIVATION OF RESIDUAL ACCEPTORS IN GASB SINGLE-CRYSTALS, Journal of crystal growth, 140(3-4), 1994, pp. 426-428
Authors:
STEPANEK B
SOUREK Z
SESTAKOVA V
SESTAK J
KUB J
Citation: B. Stepanek et al., STUDY OF LOW TE-DOPED GASB SINGLE-CRYSTALS, Journal of crystal growth, 135(1-2), 1994, pp. 290-296
Authors:
SESTAKOVA V
STEPANEK B
SESTAK J
HUBIK P
SMID V
Citation: V. Sestakova et al., THERMODYNAMIC ASPECTS OF (TE,S)-DOUBLE-DOPED GASB CRYSTAL-GROWTH, Materials science & engineering. B, Solid-state materials for advanced technology, 21(1), 1993, pp. 14-18
Authors:
STEPANEK B
SESTAKOVA V
SESTAK J
Citation: B. Stepanek et al., CZOCHRALSKI GROWTH OF TE-DOPED GASB SINGLE-CRYSTALS, Materials science & engineering. B, Solid-state materials for advanced technology, 20(3), 1993, pp. 249-255
Authors:
SESTAKOVA V
STEPANEK B
LAUDAT F
Citation: V. Sestakova et al., DOPING OF GASB SINGLE-CRYSTALS, Materials chemistry and physics, 36(1-2), 1993, pp. 142-145
Authors:
MORAVEC F
STEPANEK B
SESTAKOVA V
Citation: F. Moravec et al., ETCH PIT DENSITY DISTRIBUTIONS IN UNDOPED AND DOPED GAAS SINGLE-CRYSTALS, Crystal research and technology, 28(3), 1993, pp. 391-394
Authors:
SESTAKOVA V
HUBIK P
STEPANEK B
KRISTOFIK J
Citation: V. Sestakova et al., GASB SINGLE-CRYSTALS DOPED WITH MANGANESE, Journal of crystal growth, 132(1-2), 1993, pp. 345-347
Authors:
STEPANEK B
SESTAKOVA V
SESTAK J
Citation: B. Stepanek et al., COMPARATIVE-ANALYSIS OF GASB SINGLE-CRYSTAL GROWTH TECHNIQUES, Inorganic materials, 29(9), 1993, pp. 1071-1075
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