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Results: 1-25 |
Results: 25
BIMODAL HEIGHT DISTRIBUTION OF SELF-ASSEMBLED GERMANIUM ISLANDS GROWNON SI0.84GE0.16 PSEUDO-SUBSTRATES
Authors: PEDERSEN EV JENSEN F SHIRYAEV SY PETERSEN JW HANSEN JL LARSEN AN
Citation: Ev. Pedersen et al., BIMODAL HEIGHT DISTRIBUTION OF SELF-ASSEMBLED GERMANIUM ISLANDS GROWNON SI0.84GE0.16 PSEUDO-SUBSTRATES, Thin solid films, 321, 1998, pp. 92-97
ORDERING OF GERMANIUM ISLANDS IN THE SI1-XGEX SI SYSTEM PRE-STRUCTURED BY MISFIT DISLOCATIONS/
Authors: PEDERSEN EV SHIRYAEV SY JENSEN F HANSEN JL PETERSEN JW
Citation: Ev. Pedersen et al., ORDERING OF GERMANIUM ISLANDS IN THE SI1-XGEX SI SYSTEM PRE-STRUCTURED BY MISFIT DISLOCATIONS/, Surface science, 399(2-3), 1998, pp. 351-356
EFFECT OF COMPOSITION AND ANNEALING ON STRUCTURAL DEFECTS IN HIGH-DOSE ARSENIC-IMPLANTED SI1-XGEX ALLOYS
Authors: GAIDUK PI TISHKOV VS SHIRYAEV SY LARSEN AN
Citation: Pi. Gaiduk et al., EFFECT OF COMPOSITION AND ANNEALING ON STRUCTURAL DEFECTS IN HIGH-DOSE ARSENIC-IMPLANTED SI1-XGEX ALLOYS, Journal of applied physics, 84(8), 1998, pp. 4185-4192
RELAXED EPITAXIAL SI(1-X)GE-X GROWN BY MBE
Authors: MONAKHOV EV SHIRYAEV SY LARSEN AN HARTUNG J DAVIES G
Citation: Ev. Monakhov et al., RELAXED EPITAXIAL SI(1-X)GE-X GROWN BY MBE, Thin solid films, 294(1-2), 1997, pp. 43-46
DISLOCATION PATTERNING - A NEW TOOL FOR SPATIAL MANIPULATION OF GE ISLANDS
Authors: SHIRYAEV SY PEDERSEN EV JENSEN F PETERSEN JW HANSEN JL LARSEN AN
Citation: Sy. Shiryaev et al., DISLOCATION PATTERNING - A NEW TOOL FOR SPATIAL MANIPULATION OF GE ISLANDS, Thin solid films, 294(1-2), 1997, pp. 311-314
NANOSCALE STRUCTURING BY MISFIT DISLOCATIONS IN SI1-XGEX SI - EPITAXIAL SYSTEMS/
Authors: SHIRYAEV SY JENSEN F HANSEN JL PETERSEN JW LARSEN AN
Citation: Sy. Shiryaev et al., NANOSCALE STRUCTURING BY MISFIT DISLOCATIONS IN SI1-XGEX SI - EPITAXIAL SYSTEMS/, Physical review letters, 78(3), 1997, pp. 503-506
ISOCONCENTRATION STUDIES OF ANTIMONY DIFFUSION IN SILICON
Authors: LARSEN AN KRINGHOJ P HANSEN JL SHIRYAEV SY
Citation: An. Larsen et al., ISOCONCENTRATION STUDIES OF ANTIMONY DIFFUSION IN SILICON, Journal of applied physics, 81(5), 1997, pp. 2173-2178
LOW-DIMENSIONAL STRUCTURES GENERATED BY MISFIT DISLOCATIONS IN THE BULK OF SI1-XGEX SI HETEROEPITAXIAL SYSTEMS/
Authors: SHIRYAEV SY JENSEN F PETERSEN JW HANSEN JL LARSEN AN
Citation: Sy. Shiryaev et al., LOW-DIMENSIONAL STRUCTURES GENERATED BY MISFIT DISLOCATIONS IN THE BULK OF SI1-XGEX SI HETEROEPITAXIAL SYSTEMS/, Applied physics letters, 71(14), 1997, pp. 1972-1974
ZERO-DIMENSIONAL AND ONE-DIMENSIONAL NANOSTRUCTURES ON AN SI1-XGEX SI(100) SURFACE/
Authors: JENSEN F PETERSEN JW SHIRYAEV SY LARSEN AN
Citation: F. Jensen et al., ZERO-DIMENSIONAL AND ONE-DIMENSIONAL NANOSTRUCTURES ON AN SI1-XGEX SI(100) SURFACE/, Nanotechnology, 7(2), 1996, pp. 117-121
RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED RELAXED SI1-XGEX
Authors: LARSEN AN SHIRYAEV SY GAIDUK P TISHKOV VS
Citation: An. Larsen et al., RAPID THERMAL ANNEALING OF ARSENIC IMPLANTED RELAXED SI1-XGEX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 161-164
SURFACE-MORPHOLOGY OF SILICON-TIN ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY ON SI AND SI1-XGEX SUBSTRATES
Authors: FYHN MF SHIRYAEV SY HANSEN JL LARSEN AN
Citation: Mf. Fyhn et al., SURFACE-MORPHOLOGY OF SILICON-TIN ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY ON SI AND SI1-XGEX SUBSTRATES, Applied physics letters, 69(3), 1996, pp. 394-396
RAPID THERMAL ANNEALING OF ARSENIC-IMPLANTED SI0.6GE0.4 ALLOYS - TEMPERATURE EFFECTS
Authors: TISHKOV VS GAIDUK PI SHIRYAEV SY LARSEN AN
Citation: Vs. Tishkov et al., RAPID THERMAL ANNEALING OF ARSENIC-IMPLANTED SI0.6GE0.4 ALLOYS - TEMPERATURE EFFECTS, Applied physics letters, 68(5), 1996, pp. 655-657
RECRYSTALLIZATION OF RELAXED SIGE ALLOY LAYERS
Authors: KRINGHOJ P ELLIMAN RG FYHN M SHIRYAEV SY LARSEN AN
Citation: P. Kringhoj et al., RECRYSTALLIZATION OF RELAXED SIGE ALLOY LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 346-349
STRAIN RELAXATION AND SELF-ORGANIZATION PHENOMENA IN HETEROEPITAXIAL SYSTEMS
Authors: SHIRYAEV SY HANSEN JL LARSEN AN
Citation: Sy. Shiryaev et al., STRAIN RELAXATION AND SELF-ORGANIZATION PHENOMENA IN HETEROEPITAXIAL SYSTEMS, Physical review. B, Condensed matter, 52(22), 1995, pp. 15881-15888
DISLOCATION PATTERNING AND NANOSTRUCTURE ENGINEERING IN COMPOSITIONALLY GRADED SI1-XGEX SI LAYER SYSTEMS/
Authors: SHIRYAEV SY JENSEN F PETERSEN JW HANSEN JL LARSEN AN
Citation: Sy. Shiryaev et al., DISLOCATION PATTERNING AND NANOSTRUCTURE ENGINEERING IN COMPOSITIONALLY GRADED SI1-XGEX SI LAYER SYSTEMS/, Journal of crystal growth, 157(1-4), 1995, pp. 132-136
IMPROVEMENT OF THE MORPHOLOGICAL QUALITY OF THE SI SURFACE USING AN OPTIMIZED IN-SITU OXIDE REMOVAL PROCEDURE PRIOR TO MBE GROWTH
Authors: HANSEN JL SHIRYAEV SY THOMSEN EV
Citation: Jl. Hansen et al., IMPROVEMENT OF THE MORPHOLOGICAL QUALITY OF THE SI SURFACE USING AN OPTIMIZED IN-SITU OXIDE REMOVAL PROCEDURE PRIOR TO MBE GROWTH, Journal of crystal growth, 157(1-4), 1995, pp. 317-322
PSEUDOMORPHIC SI1-XSNX ALLOY-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ONSI
Authors: SHIRYAEV SY HANSEN JL KRINGHOJ P LARSEN AN
Citation: Sy. Shiryaev et al., PSEUDOMORPHIC SI1-XSNX ALLOY-FILMS GROWN BY MOLECULAR-BEAM EPITAXY ONSI, Applied physics letters, 67(16), 1995, pp. 2287-2289
THERMAL-STABILITY OF HIGHLY SB-DOPED MOLECULAR-BEAM EPITAXY SILICON GROWN AT LOW-TEMPERATURES - STRUCTURAL AND ELECTRICAL CHARACTERIZATION
Authors: THOMSEN EV HANSEN O HARREKILDEPETERSEN K HANSEN JL SHIRYAEV SY LARSEN AN
Citation: Ev. Thomsen et al., THERMAL-STABILITY OF HIGHLY SB-DOPED MOLECULAR-BEAM EPITAXY SILICON GROWN AT LOW-TEMPERATURES - STRUCTURAL AND ELECTRICAL CHARACTERIZATION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(5), 1994, pp. 3016-3022
GROWTH AND CHARACTERIZATION OF COMPOSITIONALLY GRADED, RELAXED SI1-XGEX
Authors: LARSEN AN HANSEN JL JENSEN RS SHIRYAEV SY OSTERGAARD PR HARTUNG J DAVIES G JENSEN F PETERSEN JW
Citation: An. Larsen et al., GROWTH AND CHARACTERIZATION OF COMPOSITIONALLY GRADED, RELAXED SI1-XGEX, Physica scripta. T, 54, 1994, pp. 208-211
ON THE NATURE OF CROSS-HATCH PATTERNS ON COMPOSITIONALLY GRADED SI1-XGEX ALLOY LAYERS
Authors: SHIRYAEV SY JENSEN F PETERSEN JW
Citation: Sy. Shiryaev et al., ON THE NATURE OF CROSS-HATCH PATTERNS ON COMPOSITIONALLY GRADED SI1-XGEX ALLOY LAYERS, Applied physics letters, 64(24), 1994, pp. 3305-3307
SELF-ADJUSTMENT OF MISFIT DISLOCATIONS IN COMPOSITIONALLY GRADED SI1-XGEX LAYERS
Authors: SHIRYAEV SY
Citation: Sy. Shiryaev, SELF-ADJUSTMENT OF MISFIT DISLOCATIONS IN COMPOSITIONALLY GRADED SI1-XGEX LAYERS, Philosophical magazine letters, 68(4), 1993, pp. 195-200
HIGH-DOSE MIXED GA AS AND GA/P ION IMPLANTATIONS IN SILICON SINGLE-CRYSTALS/
Authors: SHIRYAEV SY LARSEN AN
Citation: Sy. Shiryaev et An. Larsen, HIGH-DOSE MIXED GA AS AND GA/P ION IMPLANTATIONS IN SILICON SINGLE-CRYSTALS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 846-850
RECRYSTALLIZATION OF IN AND P IMPLANTED INP
Authors: KRINGHOJ P SHIRYAEV SY
Citation: P. Kringhoj et Sy. Shiryaev, RECRYSTALLIZATION OF IN AND P IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 986-989
ION-IMPLANTED ARSENIC IN SILICON
Authors: LARSEN AN CHRISTENSEN B CHRISTENSEN PH SHIRYAEV SY
Citation: An. Larsen et al., ION-IMPLANTED ARSENIC IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 697-701
SOLID-PHASE EPITAXY OF RELAXED, IMPLANTATION-AMORPHIZED SI1-XGEX ALLOY LAYERS GROWN ON COMPOSITIONALLY GRADED BUFFERS
Authors: SHIRYAEV SY FYHN M LARSEN AN
Citation: Sy. Shiryaev et al., SOLID-PHASE EPITAXY OF RELAXED, IMPLANTATION-AMORPHIZED SI1-XGEX ALLOY LAYERS GROWN ON COMPOSITIONALLY GRADED BUFFERS, Applied physics letters, 63(25), 1993, pp. 3476-3478
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