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Results:
1-21
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Results: 21
Authors:
TSUCHIYA H
SUNABA K
MINAMI M
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., INFLUENCE OF AS AUTODOPING FROM GAAS SUBSTRATES ON THICK CUBIC GAN GROWTH BY HALIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 37(5B), 1998, pp. 568-570
Authors:
SUEMASU T
TAKAKURA K
TANAKA M
FUJII T
HASEGAWA F
Citation: T. Suemasu et al., MAGNETOTRANSPORT PROPERTIES OF A SINGLE-CRYSTALLINE BETA-FESI2 LAYER GROWN ON SI(001) SUBSTRATE BY REACTIVE DEPOSITION EPITAXY, JPN J A P 2, 37(3B), 1998, pp. 333-335
Authors:
YAGUCHI T
YONEMURA S
TSUCHIYA H
SHIMOYAMA N
SUEMASU T
HASEGAWA F
Citation: T. Yaguchi et al., DEPENDENCE OF GAN MOMBE GROWTH ON NITROGEN-SOURCE - ECR PLASMA GUN STRUCTURE AND MONOMETHYL-HYDRAZINE, Journal of crystal growth, 190, 1998, pp. 380-384
Authors:
TSUCHIYA H
SUNABA K
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., GROWTH CONDITION DEPENDENCE OF GAN CRYSTAL-STRUCTURE ON (001)GAAS BY HYDRIDE VAPOR-PHASE EPITAXY, Journal of crystal growth, 190, 1998, pp. 395-400
Authors:
YONEMURA S
YAGUCHI T
TSUCHIYA H
SHIMOYAMA N
SUEMASU T
HASEGAWA F
Citation: S. Yonemura et al., COMPARISON BETWEEN MONOMETHYL HYDRAZINE AND ECR PLASMA ACTIVATED NITROGEN AS A NITROGEN-SOURCE FOR CBE GROWTH OF GAN, Journal of crystal growth, 188(1-4), 1998, pp. 81-85
Authors:
TANAKA M
KUMAGAI Y
SUEMASU T
HASEGAWA F
Citation: M. Tanaka et al., FORMATION OF BETA-FESI2 LAYERS ON SI(001) SUBSTRATES, JPN J A P 1, 36(6A), 1997, pp. 3620-3624
Authors:
SUEMASU T
YAMAMOTO M
TAKAKURA K
HASHIMOTO S
KUMAGAI Y
HASEGAWA F
Citation: T. Suemasu et al., SI MOLECULAR-BEAM EPITAXIAL-GROWTH OVER AN ATOMIC-LAYER BORON ABSORBED SI(001) SUBSTRATE AND ITS ELECTRICAL-PROPERTIES, JPN J A P 1, 36(12A), 1997, pp. 7146-7151
Authors:
SUEMASU T
TANAKA M
FUJII T
HASHIMOTO S
KUMAGAI Y
HASEGAWA F
Citation: T. Suemasu et al., AGGREGATION OF MONOCRYSTALLINE BETA-FESI2 BY ANNEALING AND BY SI OVERLAYER GROWTH, JPN J A P 2, 36(9AB), 1997, pp. 1225-1228
Authors:
TSUCHIYA H
SUNABA K
YONEMURA S
SUEMASU T
HASEGAWA F
Citation: H. Tsuchiya et al., CUBIC DOMINANT GAN GROWTH ON (001)GAAS SUBSTRATES BY HYDRIDE VAPOR-PHASE EPITAXY, JPN J A P 2, 36(1AB), 1997, pp. 1-3
Authors:
TANAKA M
KUMAGAI Y
SUEMASU T
HASEGAWA F
Citation: M. Tanaka et al., REACTIVE DEPOSITION EPITAXIAL-GROWTH OF BETA-FESI2 LAYERS ON SI(001), Applied surface science, 117, 1997, pp. 303-307
SYNTHESIS AND CHARACTERIZATION OF SIC-SI3N4 COMPOSITES BY DUAL IRRADIATION OF CO2 AND EXCIMER LASERS
Authors:
YAMADA T
TANAKA Y
SUEMASU T
KOHTOKU Y
Citation: T. Yamada et al., SYNTHESIS AND CHARACTERIZATION OF SIC-SI3N4 COMPOSITES BY DUAL IRRADIATION OF CO2 AND EXCIMER LASERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 378-382
Authors:
MORI K
SAITOH W
SUEMASU T
KOHNO Y
WATANABE M
ASADA M
Citation: K. Mori et al., ROOM-TEMPERATURE OBSERVATION OF MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE IN A METAL (COSI2) INSULATOR (CAF2) QUANTUM INTERFERENCE TRANSISTOR STRUCTURE/, Physica. B, Condensed matter, 227(1-4), 1996, pp. 213-215
Authors:
SUEMASU T
SAITOH W
KHONO Y
MORI K
WATANABE M
ASADA M
Citation: T. Suemasu et al., TRANSFER EFFICIENCY OF HOT-ELECTRONS IN A METAL(COSI2) INSULATOR(CAF2) QUANTUM INTERFERENCE TRANSISTOR/, Surface science, 362(1-3), 1996, pp. 209-212
Authors:
SAITOH W
SUEMASU T
KOHNO Y
WATANABE M
ASADA M
Citation: W. Saitoh et al., MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCEOF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS, JPN J A P 1, 34(8B), 1995, pp. 4481-4484
Authors:
SAITOH W
SUEMASU T
KOHNO Y
WATANABE M
ASADA M
Citation: W. Saitoh et al., METAL (COSI2) INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR FABRICATED BY ELECTRON-BEAM LITHOGRAPHY ON A SI SUBSTRATE/, JPN J A P 2, 34(10A), 1995, pp. 1254-1256
Authors:
ASADA M
WATANABE M
SUEMASU T
KOHNO Y
SAITOH W
Citation: M. Asada et al., EPITAXIAL-GROWTH OF A METAL(COSI2) INSULATOR(CAF2) NANOMETER-THICK HETEROSTRUCTURE AND ITS APPLICATION TO QUANTUM-EFFECT DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 623-628
Authors:
SUEMASU T
KOHNO Y
SAITOH W
WATANABE M
ASADA M
Citation: T. Suemasu et al., THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2203-2210
Authors:
SUEMASU T
WATANABE M
SUZUKI J
KOHNO Y
ASADA M
SUZUKI N
Citation: T. Suemasu et al., METAL(COSI2) INSULATOR(CAF2) RESONANT-TUNNELING DIODE/, JPN J A P 1, 33(1A), 1994, pp. 57-65
Authors:
SUEMASU T
KOHNO Y
SAITOH W
SUZUKI N
WATANABE M
ASADA M
Citation: T. Suemasu et al., QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE, JPN J A P 2, 33(12B), 1994, pp. 1762-1765
Authors:
SUEMASU T
KOHNO Y
SUZUKI N
WATANABE M
ASADA M
Citation: T. Suemasu et al., DIFFERENT CHARACTERISTICS OF METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING TRANSISTORS DEPENDING ON BASE QUANTUM-WELL LAYER, IEICE transactions on electronics, E77C(9), 1994, pp. 1450-1454
Authors:
SUEMASU T
KURUMIYA Y
ISHIBASHI K
Citation: T. Suemasu et al., ANALYSIS OF ABNORMAL OUTPUT OF ZIRCONIA OXYGEN SENSOR IN EXHAUST-GAS AT LOW EXCESS AIR RATIO, Sensors and actuators. B, Chemical, 14(1-3), 1993, pp. 501-503
Risultati:
1-21
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