ACNP - Italian Periodicals Catalogue

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Results: 1-21 |

Results: 21

NEW STRAIN-RELIEVING MICROSTRUCTURE IN PURE-GE SI SHORT-PERIOD SUPERLATTICES/

Authors: SUNAMURA H USAMI N SHIRAKI Y FUKATSU S

Citation: H. Sunamura et al., NEW STRAIN-RELIEVING MICROSTRUCTURE IN PURE-GE SI SHORT-PERIOD SUPERLATTICES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1595-1598

PHOTOLUMINESCENCE FROM PURE-GE PURE-SI NEIGHBORING CONFINEMENT STRUCTURE/

Authors: USAMI N MIURA M SUNAMURA H SHIRAKI Y

Citation: N. Usami et al., PHOTOLUMINESCENCE FROM PURE-GE PURE-SI NEIGHBORING CONFINEMENT STRUCTURE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1710-1712

PHOTOLUMINESCENCE AND RAMAN-SCATTERING OF PURE GERMANIUM SILICON SHORT-PERIOD SUPERLATTICE/

Authors: JI ZG USAMI N SUNAMURA H SHIRAKI Y

Citation: Zg. Ji et al., PHOTOLUMINESCENCE AND RAMAN-SCATTERING OF PURE GERMANIUM SILICON SHORT-PERIOD SUPERLATTICE/, Acta physica Sinica, 7(8), 1998, pp. 608-612

SUPPRESSION OF PHONON REPLICA IN THE RADIATIVE RECOMBINATION OF AN MBE-GROWN TYPE-II GE SI QUANTUM-DOT/

Authors: FUKATSU S SUNAMURA H SHIRAKI Y KOMIYAMA S

Citation: S. Fukatsu et al., SUPPRESSION OF PHONON REPLICA IN THE RADIATIVE RECOMBINATION OF AN MBE-GROWN TYPE-II GE SI QUANTUM-DOT/, Thin solid films, 321, 1998, pp. 65-69

ANOMALOUS PHOTOLUMINESCENCE OF PURE-GE SI TYPE-II COUPLED QUANTUM-WELLS (II-CQWS)/

Authors: SUNAMURA H USAMI N SHIRAKI Y FUKATSU S

Citation: H. Sunamura et al., ANOMALOUS PHOTOLUMINESCENCE OF PURE-GE SI TYPE-II COUPLED QUANTUM-WELLS (II-CQWS)/, Thin solid films, 294(1-2), 1997, pp. 336-339

LUMINESCENCE STUDY ON GE ISLANDS AS STRESSORS ON SI1-XGEX SI QUANTUM-WELL/

Authors: KIM ES USAMI N SUNAMURA H FUKATSU S SHIRAKI Y

Citation: Es. Kim et al., LUMINESCENCE STUDY ON GE ISLANDS AS STRESSORS ON SI1-XGEX SI QUANTUM-WELL/, Journal of crystal growth, 175, 1997, pp. 519-523

PHONONLESS RADIATIVE RECOMBINATION OF INDIRECT EXCITONS IN A SI GE TYPE-II QUANTUM-DOT/

Authors: FUKATSU S SUNAMURA H SHIRAKI Y KOMIYAMA S

Citation: S. Fukatsu et al., PHONONLESS RADIATIVE RECOMBINATION OF INDIRECT EXCITONS IN A SI GE TYPE-II QUANTUM-DOT/, Applied physics letters, 71(2), 1997, pp. 258-260

FORMATION AND OPTICAL-PROPERTIES OF SIGE SI QUANTUM STRUCTURES/

Authors: SHIRAKI Y SUNAMURA H USAMI N FUKATSU S

Citation: Y. Shiraki et al., FORMATION AND OPTICAL-PROPERTIES OF SIGE SI QUANTUM STRUCTURES/, Applied surface science, 102, 1996, pp. 263-271

PHOTOLUMINESCENCE FROM SUBMONOLAYER GE EMBEDDED IN SI(100)

Authors: SUNAMURA H SHIRAKI Y FUKATSU S

Citation: H. Sunamura et al., PHOTOLUMINESCENCE FROM SUBMONOLAYER GE EMBEDDED IN SI(100), Solid-state electronics, 40(1-8), 1996, pp. 693-696

OBSERVATION OF LATERAL CONFINEMENT EFFECT IN GE QUANTUM WIRES SELF-ALIGNED AT STEP EDGES ON SI(100)

Authors: SUNAMURA H USAMI N SHIRAKI Y FUKATSU S

Citation: H. Sunamura et al., OBSERVATION OF LATERAL CONFINEMENT EFFECT IN GE QUANTUM WIRES SELF-ALIGNED AT STEP EDGES ON SI(100), Applied physics letters, 68(13), 1996, pp. 1847-1849

PHOTOLUMINESCENCE INVESTIGATION ON GROWTH MODE CHANGEOVER OF GE ON SI(100)

Authors: SUNAMURA H FUKATSU S USAMI N SHIRAKI Y

Citation: H. Sunamura et al., PHOTOLUMINESCENCE INVESTIGATION ON GROWTH MODE CHANGEOVER OF GE ON SI(100), Journal of crystal growth, 157(1-4), 1995, pp. 265-269

PHOTOLUMINESCENCE INVESTIGATION ON GROWTH MODE CHANGEOVER IN GE-RICH SI1-XGEX SI STRAINED QUANTUM-WELLS/

Authors: SUNAMURA H FUKATSU S SHIRAKI Y

Citation: H. Sunamura et al., PHOTOLUMINESCENCE INVESTIGATION ON GROWTH MODE CHANGEOVER IN GE-RICH SI1-XGEX SI STRAINED QUANTUM-WELLS/, Journal of crystal growth, 150(1-4), 1995, pp. 1038-1044

STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES/

Authors: USAMI N SUNAMURA H MINE T FUKATSU S SHIRAKI Y

Citation: N. Usami et al., STRAIN-INDUCED LATERAL BAND-GAP MODULATION IN SI1-XGEX SI QUANTUM-WELL AND QUANTUM-WIRE STRUCTURES/, Journal of crystal growth, 150(1-4), 1995, pp. 1065-1069

GROWTH MODE TRANSITION AND PHOTOLUMINESCENCE PROPERTIES OF SI1-XGEX SI QUANTUM-WELL STRUCTURES WITH HIGH GE COMPOSITION/

Authors: SUNAMURA H SHIRAKI Y FUKATSU S

Citation: H. Sunamura et al., GROWTH MODE TRANSITION AND PHOTOLUMINESCENCE PROPERTIES OF SI1-XGEX SI QUANTUM-WELL STRUCTURES WITH HIGH GE COMPOSITION/, Applied physics letters, 66(8), 1995, pp. 953-955

ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY

Authors: SUNAMURA H USAMI N SHIRAKI Y FUKATSU S

Citation: H. Sunamura et al., ISLAND FORMATION DURING GROWTH OF GE ON SI(100) - A STUDY USING PHOTOLUMINESCENCE SPECTROSCOPY, Applied physics letters, 66(22), 1995, pp. 3024-3026

OPTICAL-DETECTION OF INTERDIFFUSION IN STRAINED SI1-XGEX SI QUANTUM-WELL STRUCTURES/

Authors: SUNAMURA H FUKATSU S USAMI N SHIRAKI Y

Citation: H. Sunamura et al., OPTICAL-DETECTION OF INTERDIFFUSION IN STRAINED SI1-XGEX SI QUANTUM-WELL STRUCTURES/, JPN J A P 1, 33(4B), 1994, pp. 2344-2347

ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX SI QUANTUM-WELLS/

Authors: FUKATSU S SUNAMURA H SHIRAKI Y

Citation: S. Fukatsu et al., ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED SI1-XGEX SI QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1160-1162

BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)/

Authors: NAYAK DK USAMI N SUNAMURA H FUKATSU S SHIRAKI Y

Citation: Dk. Nayak et al., BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI/SIGE TYPE-II QUANTUM-WELLS ON SI(100)/, Solid-state electronics, 37(4-6), 1994, pp. 933-936

GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX SI QUANTUM-WELLS/

Authors: FUKATSU S USAMI N KATO Y SUNAMURA H SHIRAKI Y OKU H OHNISHI T OHMORI Y OKUMURA K

Citation: S. Fukatsu et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY AND LUMINESCENCE CHARACTERIZATION OF STRAINED SI1-XGEX SI QUANTUM-WELLS/, Journal of crystal growth, 136(1-4), 1994, pp. 315-321

BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100)

Authors: NAYAK DK USAMI N SUNAMURA H FUKATSU S SHIRAKI Y

Citation: Dk. Nayak et al., BAND-EDGE PHOTOLUMINESCENCE OF SIGE STRAINED-SI SIGE TYPE-II QUANTUM-WELLS ON SI(100), JPN J A P 2, 32(10A), 1993, pp. 120001391-120001393

LUMINESCENCE STUDY ON INTERDIFFUSION IN STRAINED SI1-XGEX SI SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/

Authors: SUNAMURA H FUKATSU S USAMI N SHIRAKI Y

Citation: H. Sunamura et al., LUMINESCENCE STUDY ON INTERDIFFUSION IN STRAINED SI1-XGEX SI SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY/, Applied physics letters, 63(12), 1993, pp. 1651-1653

Risultati: 1-21 |