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Results: 1-19 |
Results: 19
A SENSOR-BASED ON THE PLANAR-POLARIZATION INTERFEROMETER
Authors: SHIRSHOV YM SVECHNIKOV SV KIYANOVSKII AP USHENIN YV VENGER EF SAMOYLOV AV MERKER R
Citation: Ym. Shirshov et al., A SENSOR-BASED ON THE PLANAR-POLARIZATION INTERFEROMETER, Sensors and actuators. A, Physical, 68(1-3), 1998, pp. 384-387
THIN-FILMS OF HGCDTE ON SILICON SURFACES
Authors: WISZ G SHEREGII E KUZMA M SMERTENKO PS SVECHNIKOV SV GORBACH TY MAZIARZ W MORGIEL J CIACH R
Citation: G. Wisz et al., THIN-FILMS OF HGCDTE ON SILICON SURFACES, Thin solid films, 318(1-2), 1998, pp. 33-37
SILICON-BASED MULTILAYER STRUCTURES PREPARED BY REACTIVE PULSED-LASERDEPOSITION
Authors: CIACH R MORGIEL J MAZIARZ W MANOILOV EG KAGANOVICH EB SVECHNIKOV SV SHEREGII EM
Citation: R. Ciach et al., SILICON-BASED MULTILAYER STRUCTURES PREPARED BY REACTIVE PULSED-LASERDEPOSITION, Thin solid films, 318(1-2), 1998, pp. 154-157
AUGER SPECTROSCOPIC INVESTIGATION OF A-C-H FILMS ON SILICON MICRORELIEF SUBSTRATES
Authors: GORBACH TY MATVEEVA LA SVECHNIKOV SV VASIN AV VENGER EF
Citation: Ty. Gorbach et al., AUGER SPECTROSCOPIC INVESTIGATION OF A-C-H FILMS ON SILICON MICRORELIEF SUBSTRATES, Carbon (New York), 36(5-6), 1998, pp. 513-515
ACCEPTORS IN CD1-XMNXTE (X-LESS-THAN-0.1)
Authors: VLASENKO AI BABENTSOV VN VLASENKO ZK SVECHNIKOV SV RARENKO IM ZAKHARUK ZI NIKONYUK ES SHLYAKHOVYI VL
Citation: Ai. Vlasenko et al., ACCEPTORS IN CD1-XMNXTE (X-LESS-THAN-0.1), Semiconductors, 31(8), 1997, pp. 869-871
EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING
Authors: GORBACH TY SVECHNIKOV SV SMERTENKO PS TULCHINSKII PG BONDARENKO AV VOLCHEK SA DOROFEEV AM MASINI G MAIELLO G LAMONICA S FERRARI A
Citation: Ty. Gorbach et al., EVOLUTION OF THE CURRENT-VOLTAGE CHARACTERISTICS OF PHOTOLUMINESCING POROUS SILICON DURING CHEMICAL ETCHING, Semiconductors, 31(12), 1997, pp. 1221-1224
RELAXATION SPECTRA OF PHOTOLUMINESCENCE FROM POROUS SILICON OBTAINED BY CHEMICAL ETCHING OF LASER-MODIFIED SILICON
Authors: FEDORENKO LL SARDARLY AD KAGANOVICH EB SVECHNIKOV SV DIKII SP BARANETS SV
Citation: Ll. Fedorenko et al., RELAXATION SPECTRA OF PHOTOLUMINESCENCE FROM POROUS SILICON OBTAINED BY CHEMICAL ETCHING OF LASER-MODIFIED SILICON, Semiconductors, 31(1), 1997, pp. 4-7
RADIATION SPECTRA IN GAN-BASED LEDS UNDER THERMAL-INJECTION PROCESSES
Authors: SVECHNIKOV SV OLEKSENKO PP SUKACH GA SMERTENKO PS VLASKINA SI GROMASHEVSKI VL
Citation: Sv. Svechnikov et al., RADIATION SPECTRA IN GAN-BASED LEDS UNDER THERMAL-INJECTION PROCESSES, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 319-321
SILICON COMPOSITE STRUCTURES FOR HOLOGRAP HIC RECORDING
Authors: KAGANOVICH EB MANOILOV EG SVECHNIKOV SV SALKOVA EN SAVCHUK AV SERGAN TA SOSKIN MS
Citation: Eb. Kaganovich et al., SILICON COMPOSITE STRUCTURES FOR HOLOGRAP HIC RECORDING, ZHURNAL NAUCHNOI I PRIKLADNOI FOTOGRAFII, 42(2), 1997, pp. 61-64
USE OF THE SILICON-CRYSTALS PHOTOLUMINESCENCE TO CONTROL IMMUNOCOMPLEX FORMATION
Authors: STARODUB NF FEDORENKO LL STARODUB VM DIKIJ SP SVECHNIKOV SV
Citation: Nf. Starodub et al., USE OF THE SILICON-CRYSTALS PHOTOLUMINESCENCE TO CONTROL IMMUNOCOMPLEX FORMATION, Sensors and actuators. B, Chemical, 35(1-3), 1996, pp. 44-47
SIMULTANEOUS CHANGES IN THE PHOTOLUMINESCENCE, INFRARED-ABSORPTION AND MORPHOLOGY OF POROUS SILICON DURING ETCHING BY HF
Authors: GORBACH TY RUDKO GY SMERTENKO PS SVECHNIKOV SV VALAKH MY BONDARENKO VP DOROFEEV AM
Citation: Ty. Gorbach et al., SIMULTANEOUS CHANGES IN THE PHOTOLUMINESCENCE, INFRARED-ABSORPTION AND MORPHOLOGY OF POROUS SILICON DURING ETCHING BY HF, Semiconductor science and technology, 11(4), 1996, pp. 601-606
DEPOSITION OF HGCDTE EPITAXIAL LAYERS ON ANISOTROPICALLY ETCHED SILICON SURFACES BY LASER EVAPORATION
Authors: GORBACH TY KUZMA M SHEREGII E SMERTENKO PS SVECHNIKOV SV WISZ G
Citation: Ty. Gorbach et al., DEPOSITION OF HGCDTE EPITAXIAL LAYERS ON ANISOTROPICALLY ETCHED SILICON SURFACES BY LASER EVAPORATION, Applied surface science, 96-8, 1996, pp. 881-886
ELECTRON PROPERTIES OF GAAS BOUNDARY IN H ETEROSTRUCTURE GAAS-ZNS
Authors: VENGER EF ZAVYALOVA LV KIRILLOVA SI PRIMACHENKO VE SVECHNIKOV SV
Citation: Ef. Venger et al., ELECTRON PROPERTIES OF GAAS BOUNDARY IN H ETEROSTRUCTURE GAAS-ZNS, RADIOTEK EL, 41(12), 1996, pp. 1513-1517
IV-VI COMPOSITIONAL MQWS AND SLS FOR OPTOELECTRONIC APPLICATIONS
Authors: TETYORKIN VV SIZOV FF SVECHNIKOV SV GOLOVIN VG
Citation: Vv. Tetyorkin et al., IV-VI COMPOSITIONAL MQWS AND SLS FOR OPTOELECTRONIC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 76-79
ATOMIC-STRUCTURE DISPLAY OF A REAL SILICON SURFACE UNDER LIGHT-SCATTERING
Authors: DOMASHEV GE SHIRSHOV YM STERLIGOV VA SUBBOTA YV SVECHNIKOV SV
Citation: Ge. Domashev et al., ATOMIC-STRUCTURE DISPLAY OF A REAL SILICON SURFACE UNDER LIGHT-SCATTERING, Applied optics, 34(13), 1995, pp. 2367-2371
PHOTOLUMINESCENCE OF ANISOTROPICALLY ETCHED SILICON
Authors: GORBACH TY RUDKO GY SMERTENKO PS SVECHNIKOV SV VALAKH MY
Citation: Ty. Gorbach et al., PHOTOLUMINESCENCE OF ANISOTROPICALLY ETCHED SILICON, Applied physics. A, Solids and surfaces, 58(2), 1994, pp. 183-186
SPALLATION OF PEAKS IN SPECTRA OF SEMICON DUCTOR-SELF-OXIDE HETEROSYSTEM ELECTROREFLECTION
Authors: VENGER EF GORBACH TY MATVEEVA LA SVECHNIKOV SV
Citation: Ef. Venger et al., SPALLATION OF PEAKS IN SPECTRA OF SEMICON DUCTOR-SELF-OXIDE HETEROSYSTEM ELECTROREFLECTION, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 60-64
PHOTOLUMINESCENCE OF POROUS SILICON INDUC ED BY LASER-RADIATION
Authors: SVECHNIKOV SV FEDORENKO LL KAGANOVICH EB SARDARLY AD DIKIY SP BARANETZ SV
Citation: Sv. Svechnikov et al., PHOTOLUMINESCENCE OF POROUS SILICON INDUC ED BY LASER-RADIATION, UKRAINSKII FIZICHESKII ZHURNAL, 39(5-6), 1994, pp. 704-705
ELECTRONIC-PROPERTIES OF GERMANIUM - SAMA RIUM OXYSULPHID FILM SYSTEM
Authors: VENGER EF ZAVIALOVA LV KIRILLOVA SI PRIMACHENKO VE SVECHNIKOV SV CHERNOBAY VA
Citation: Ef. Venger et al., ELECTRONIC-PROPERTIES OF GERMANIUM - SAMA RIUM OXYSULPHID FILM SYSTEM, UKRAINSKII FIZICHESKII ZHURNAL, 39(3-4), 1994, pp. 358-361
Risultati: 1-19 |