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Results: 51-75/106
Authors:
TOGAWA S
IZUNOME K
KAWANISHI S
CHUNG SI
TERASHIMA K
KIMURA S
Citation: S. Togawa et al., OXYGEN-TRANSPORT FROM A SILICA CRUCIBLE IN CZOCHRALSKI SILICON GROWTH, Journal of crystal growth, 165(4), 1996, pp. 362-371
Authors:
TOGAWA S
CHUNG SI
KAWANISHI S
IZUNOME K
TERASHIMA K
KIMURA S
Citation: S. Togawa et al., DENSITY ANOMALY EFFECT UPON SILICON MELT FLOW DURING CZOCHRALSKI CRYSTAL-GROWTH .1. UNDER THE GROWTH INTERFACE, Journal of crystal growth, 160(1-2), 1996, pp. 41-48
Authors:
TOGAWA S
CHUNG SI
KAWANISHI S
IZUNOME K
TERASHIMA K
KIMURA S
Citation: S. Togawa et al., DENSITY ANOMALY EFFECT UPON SILICON MELT FLOW DURING CZOCHRALSKI CRYSTAL-GROWTH .2. TIME-TOPICAL FLOW STRUCTURE UNDER THE GROWTH INTERFACE, Journal of crystal growth, 160(1-2), 1996, pp. 49-54
Authors:
WATANABE Y
TERASHIMA K
HIDAKA H
Citation: Y. Watanabe et al., NEURONAL NITRIC-OXIDE SYNTHASE SPECIFIC AUTOPHOSPHORYLATION IN BACULOVIRUS SF9 INSECT-CELL SYSTEM/, Biochemical and biophysical research communications, 219(2), 1996, pp. 638-643
Authors:
WASEDA Y
SHINODA K
SUGIYAMA K
TAKEDA S
TERASHIMA K
TOGURI JM
Citation: Y. Waseda et al., HIGH-TEMPERATURE X-RAY-DIFFRACTION STUDY OF MELT STRUCTURE OF SILICON, JPN J A P 1, 34(8A), 1995, pp. 4124-4128
Authors:
SASAKI H
IKARI A
TERASHIMA K
KIMURA S
Citation: H. Sasaki et al., TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-RESISTIVITY OF MOLTEN SILICON, JPN J A P 1, 34(7A), 1995, pp. 3426-3431
Authors:
SASAKI H
TOKIZAKI E
HUANG XM
TERASHIMA K
KIMURA S
Citation: H. Sasaki et al., TEMPERATURE-DEPENDENCE OF THE VISCOSITY OF MOLTEN SILICON MEASURED BYTHE OSCILLATING CUP METHOD, JPN J A P 1, 34(7A), 1995, pp. 3432-3436
Authors:
HUANG XM
TERASHIMA K
IZUNOME K
KIMURA S
Citation: Xm. Huang et al., CHEMICAL-REACTION OF SB ATOMS IN SI MELT, JPN J A P 1, 34(3), 1995, pp. 1502-1503
Authors:
SASAKI H
ANZAI Y
HUANG XM
TERASHIMA K
KIMURA S
Citation: H. Sasaki et al., SURFACE-TENSION VARIATION OF MOLTEN SILICON MEASURED BY THE RING METHOD, JPN J A P 1, 34(2A), 1995, pp. 414-418
Authors:
KAWANISHI S
SASAKI H
TAKEDA S
TERASHIMA K
KIMURA S
Citation: S. Kawanishi et al., EFFECT OF GALLIUM ADDITION ON DENSITY VARIATION OF MOLTEN SILICON, JPN J A P 1, 34(2A), 1995, pp. 482-483
Authors:
KAWANISHI S
TOGAWA S
IZUNOME K
TERASHIMA K
KIMURA S
Citation: S. Kawanishi et al., INFLUENCE OF SURFACE MELT FLOW ON OXYGEN INHOMOGENEITY IN CZOCHRALSKI-GROWN SILICON SINGLE-CRYSTAL - STUDIED BY DOUBLE-LAYERED CZOCHRALSKI (DLCZ) MELT QUENCHING TECHNIQUE, JPN J A P 1, 34(11), 1995, pp. 5885-5890
Authors:
IKARI A
SASAKI H
TOKIZAKI E
TERASHIMA K
KIMURA S
Citation: A. Ikari et al., INFLUENCE OF ATMOSPHERE ON MOLTEN SILICON DENSITY, JPN J A P 2, 34(8B), 1995, pp. 1017-1019
Authors:
IZUNOME K
HUANG XM
TERASHIMA K
KIMURA S
Citation: K. Izunome et al., EVALUATION OF EVAPORATED SPECIES FROM SILICON MELT SURFACE DURING SB-DOPED CZOCHRALSKI SILICON CRYSTAL-GROWTH, JPN J A P 2, 34(12B), 1995, pp. 1635-1637
Authors:
KAWANISHI S
SASAKI H
TERASHIMA K
KIMURA S
Citation: S. Kawanishi et al., EFFECT OF IMPURITY DOPING ON DENSITY ANOMALIES IN MOLTEN SILICON, JPN J A P 2, 34(11B), 1995, pp. 1509-1512
Authors:
TERASHIMA K
GOJI J
SANO K
Citation: K. Terashima et al., MOLECULAR-CLONING AND LOCALIZATION OF RAT INTESTINAL PHOSPHODIESTERASE-I NUCLEOTIDE PYROPHOSPHATASE (PD-1-BETA), Molecular biology of the cell, 6, 1995, pp. 1538-1538
Authors:
YAMAMOTO H
TAKESHITA F
TERASHIMA K
KUBO Y
GOTO Y
SAWADA S
YANO S
Citation: H. Yamamoto et al., LIQUID-CRYSTALLINE COMPOUNDS HAVING 1,2,3-TRIFLUOROPHENYL SUBSTITUENTFOR AM-LCDS WITH LOW-VOLTAGE IC DRIVER, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 264, 1995, pp. 57-65
Authors:
TERASHIMA K
AQIL M
NIWA M
Citation: K. Terashima et al., GARCINIANIN, A NOVEL BIFLAVONOID FROM THE ROOTS OF GARCINIA-KOLA, Heterocycles, 41(10), 1995, pp. 2245-2250
Authors:
HUANG XM
TOGAWA S
CHUNG SI
TERASHIMA K
KIMURA S
Citation: Xm. Huang et al., SURFACE-TENSION OF A SI MELT - INFLUENCE OF OXYGEN PARTIAL-PRESSURE, Journal of crystal growth, 156(1-2), 1995, pp. 52-58
Authors:
KAWANISHI S
TOGAWA S
IZUNOME K
TERASHIMA K
KIMURA S
Citation: S. Kawanishi et al., MELT QUENCHING TECHNIQUE FOR DIRECT OBSERVATION OF OXYGEN-TRANSPORT IN THE CZOCHRALSKI-GROWN SI PROCESS, Journal of crystal growth, 152(4), 1995, pp. 266-273
Authors:
IZUNOME K
HUANG XM
TOGAWA S
TERASHIMA K
KIMURA S
Citation: K. Izunome et al., CONTROL OF OXYGEN CONCENTRATION IN HEAVILY ANTIMONY-DOPED CZOCHRALSKISI CRYSTALS BY AMBIENT ARGON PRESSURE, Journal of crystal growth, 151(3-4), 1995, pp. 291-294
Authors:
HUANG XM
TERASHIMA K
IZUNOME K
KIMURA S
Citation: Xm. Huang et al., EFFECT OF ANTIMONY-DOPING ON THE OXYGEN SEGREGATION COEFFICIENT IN SILICON CRYSTAL-GROWTH, Journal of crystal growth, 149(1-2), 1995, pp. 59-63
Authors:
TOGAWA S
HUANG XM
IZUNOME K
TERASHIMA K
KIMURA S
Citation: S. Togawa et al., OXYGEN-TRANSPORT ANALYSIS IN CZOCHRALSKI SILICON MELT BY CONSIDERING THE OXYGEN EVAPORATION FROM THE MELT SURFACE, Journal of crystal growth, 148(1-2), 1995, pp. 70-78
Authors:
TWEET DJ
TATSUMI T
MIYANAGA K
TERASHIMA K
Citation: Dj. Tweet et al., STRUCTURAL-ANALYSIS OF IMPERFECT GESI SUPERLATTICES GROWN ON GE(001) SUBSTRATES, Journal of applied physics, 78(1), 1995, pp. 117-121
Authors:
TOGAWA S
SHIRAISHI Y
TERASHIMA K
KIMURA S
Citation: S. Togawa et al., OXYGEN-TRANSPORT MECHANISM IN CZOCHRALSKI SILICON MELT .1. THE WHOLE BULK MELT, Journal of the Electrochemical Society, 142(8), 1995, pp. 2839-2844
Authors:
TOGAWA S
SHIRAISHI Y
TERASHIMA K
KIMURA S
Citation: S. Togawa et al., OXYGEN-TRANSPORT MECHANISM IN CZOCHRALSKI SILICON MELT .2. VICINITY OF GROWTH INTERFACE, Journal of the Electrochemical Society, 142(8), 1995, pp. 2844-2848