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Results: 1-19 |
Results: 19
INFLUENCE OF THE OXYGEN-CONTENT IN SIGE ON THE PARAMETERS OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/
Authors: KNOLL D HEINEMANN B BOLZE D EHWALD KE FISCHER G KRUGER D MORGENSTERN T NAUMANN E SCHLEY P TILLACK B WOLANSKY D
Citation: D. Knoll et al., INFLUENCE OF THE OXYGEN-CONTENT IN SIGE ON THE PARAMETERS OF SI SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(9), 1998, pp. 1022-1026
ATOMIC CONTROL OF DOPING DURING SIGE EPITAXY
Authors: TILLACK B
Citation: B. Tillack, ATOMIC CONTROL OF DOPING DURING SIGE EPITAXY, Thin solid films, 318(1-2), 1998, pp. 1-5
ATOMIC LAYER DOPING OF SIGE BY LOW-PRESSURE (RAPID THERMAL) CHEMICAL-VAPOR-DEPOSITION
Authors: TILLACK B KRUGER D GAWORZEWSKI P RITTER G
Citation: B. Tillack et al., ATOMIC LAYER DOPING OF SIGE BY LOW-PRESSURE (RAPID THERMAL) CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 15-17
INFRARED-SENSITIVE SIGE-SI HETEROJUNCTION INTERNAL PHOTOEMISSION DETECTORS PRODUCED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: BANISCH R TILLACK B PRESSEL K BARTH R ERZGRABER H
Citation: R. Banisch et al., INFRARED-SENSITIVE SIGE-SI HETEROJUNCTION INTERNAL PHOTOEMISSION DETECTORS PRODUCED BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 294(1-2), 1997, pp. 354-356
MONITORING OF DEPOSITION AND DRY-ETCHING OF SI SIGE MULTIPLE STACKS
Authors: TILLACK B RICHTER HH RITTER G WOLFF A MORGENSTERN G EGGS C
Citation: B. Tillack et al., MONITORING OF DEPOSITION AND DRY-ETCHING OF SI SIGE MULTIPLE STACKS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 102-105
BASE CURRENTS OF SI SIGE/SI HBT IN DEPENDENCE ON THE PROCESSING CONDITIONS/
Authors: KNOLL D FISCHER G EHWALD KE HEINEMANN B SCHLEY P ZEINDL H TILLACK B MORGENSTERN T WOLFF A
Citation: D. Knoll et al., BASE CURRENTS OF SI SIGE/SI HBT IN DEPENDENCE ON THE PROCESSING CONDITIONS/, Applied surface science, 102, 1996, pp. 247-251
STRAIN-MEASUREMENT IN THIN PSEUDOMORPHIC SIGE LAYERS OF SUBMICRON WIRES USING RAMAN-SPECTROSCOPY
Authors: DIETRICH B BUGIEL E FRANKENFELDT H HARKER AH JAGDHOLD U TILLACK B WOLFF A
Citation: B. Dietrich et al., STRAIN-MEASUREMENT IN THIN PSEUDOMORPHIC SIGE LAYERS OF SUBMICRON WIRES USING RAMAN-SPECTROSCOPY, Solid-state electronics, 40(1-8), 1996, pp. 307-310
DETERMINATION OF CAFFEINE IN ROASTED COFF EE
Authors: MAIER HG TILLACK B HOLLER U
Citation: Hg. Maier et al., DETERMINATION OF CAFFEINE IN ROASTED COFF EE, Deutsche Lebensmittel-Rundschau, 92(9), 1996, pp. 283-285
DELTA-DOPING IN SI AND SIGE BY LP(RT)CVD
Authors: TILLACK B SCHLOTE J RITTER G KRUGER D MORGENSTERN G GAWORZEWSKI P
Citation: B. Tillack et al., DELTA-DOPING IN SI AND SIGE BY LP(RT)CVD, Journal de physique. IV, 5(C5), 1995, pp. 1117-1123
SYSTEMATIC CLASSIFICATION OF LPCVD PROCESSES
Authors: SCHLOTE J TITTELBACHHELMRICH K TILLACK B KUCK B HUNLICH T
Citation: J. Schlote et al., SYSTEMATIC CLASSIFICATION OF LPCVD PROCESSES, Journal de physique. IV, 5(C5), 1995, pp. 283-290
SYSTEMATIC CLASSIFICATION OF LPCVD PROCESSES
Authors: SCHLOTE J TITTELBACHHELMRICH K TILLACK B KUCK B HUNLICH T
Citation: J. Schlote et al., SYSTEMATIC CLASSIFICATION OF LPCVD PROCESSES, Journal de physique. IV, 5(C5), 1995, pp. 283-290
SHARP BORON DOPING WITHIN THIN SIGE LAYER BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION
Authors: TILLACK B RITTER G KRUGER D ZAUMSEIL P MORGENSTERN G
Citation: B. Tillack et al., SHARP BORON DOPING WITHIN THIN SIGE LAYER BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, Materials science and technology, 11(10), 1995, pp. 1060-1064
STUDIES OF SIGE ALLOY SURFACES AFTER REACTIVE ION ETCHING
Authors: RICHTER HH WOLFF A TILLACK B KRUGER D HOPPNER K EGGS C
Citation: Hh. Richter et al., STUDIES OF SIGE ALLOY SURFACES AFTER REACTIVE ION ETCHING, Physica status solidi. a, Applied research, 152(2), 1995, pp. 443-450
STRAIN COMPENSATION IN TERNARY SI1-X-YGEXBY FILMS
Authors: TILLACK B ZAUMSEIL P MORGENSTERN G KRUGER D DIETRICH B RITTER G
Citation: B. Tillack et al., STRAIN COMPENSATION IN TERNARY SI1-X-YGEXBY FILMS, Journal of crystal growth, 157(1-4), 1995, pp. 181-184
IN-SITU OBSERVATION OF CHEMICAL-VAPOR-DEPOSITION GROWTH OF EPITAXIAL SIGE THIN-FILMS BY REFLECTION SUPPORTED PYROMETRIC INTERFEROMETRY
Authors: RITTER G TILLACK B WEIDNER M ZAUMSEIL P BOBEL FG HERTEL B MOLLER H
Citation: G. Ritter et al., IN-SITU OBSERVATION OF CHEMICAL-VAPOR-DEPOSITION GROWTH OF EPITAXIAL SIGE THIN-FILMS BY REFLECTION SUPPORTED PYROMETRIC INTERFEROMETRY, Journal of crystal growth, 146(1-4), 1995, pp. 119-124
STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING
Authors: TILLACK B ZAUMSEIL P MORGENSTERN G KRUGER D RITTER G
Citation: B. Tillack et al., STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING, Applied physics letters, 67(8), 1995, pp. 1143-1144
OPTICAL-EMISSION END-POINT DETECTION FOR REACTIVE ION ETCHING OF SI SIGE STRUCTURES/
Authors: RICHTER HH WOLFF A TILLACK B SKALOUD T
Citation: Hh. Richter et al., OPTICAL-EMISSION END-POINT DETECTION FOR REACTIVE ION ETCHING OF SI SIGE STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 27(1), 1994, pp. 39-45
OPTICAL-EMISSION END-POINT DETECTION FOR REACTIVE ION ETCHING OF SI SIGE STRUCTURES/
Authors: RICHTER HH WOLFF A TILLACK B SKALOUD T
Citation: Hh. Richter et al., OPTICAL-EMISSION END-POINT DETECTION FOR REACTIVE ION ETCHING OF SI SIGE STRUCTURES/, Materials science & engineering. B, Solid-state materials for advanced technology, 27(1), 1994, pp. 39-45
THERMAL-ANALYSIS ON ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS USING A FINITE-DIFFERENCE METHOD
Authors: RICHTER HH TILLACK B ANDRA H WEINELT W
Citation: Hh. Richter et al., THERMAL-ANALYSIS ON ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR FILMS USING A FINITE-DIFFERENCE METHOD, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 173(1-2), 1993, pp. 59-62
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