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Results: 1-25/31
Authors:
HECK C
HORINO Y
TSUBOUCHI N
CHAYAHARA A
FUJII K
IWAMI M
ABIKO K
Citation: C. Heck et al., THIN-FILMS FORMED BY SINGLE AND DUAL-ION BEAM DEPOSITION OF POSITIVE AND NEGATIVE-IONS (AU- AND N+), Materials chemistry and physics, 54(1-3), 1998, pp. 247-250
Authors:
TSUBOUCHI N
HORINO Y
ENDERS B
CHAYAHARA A
KINOMURA A
FUJII K
Citation: N. Tsubouchi et al., CHARACTERIZATION OF CARBON NITRIDE FILMS PRODUCED BY SIMULTANEOUS LOW-ENERGY DUAL-ION BEAMS IRRADIATION, Materials chemistry and physics, 54(1-3), 1998, pp. 325-329
Authors:
MOKUNO Y
HORINO Y
TADIC T
TERASAWA M
SEKIOKA T
CHAYAHARA A
KINOMURA A
TSUBOUCHI N
FUJII K
Citation: Y. Mokuno et al., HIGH-ENERGY RESOLUTION PIXE ANALYSIS USING FOCUSED MEV HEAVY-ION BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 368-372
Authors:
CHAYAHARA A
HORINO Y
TSUBOUCHI N
KINOMURA A
FUJII K
Citation: A. Chayahara et al., APPROACH TO FORMATION OF ULTRA-PURE METAL-FILMS BY MEANS OF ION-BEAM TECHNOLOGY, Physica status solidi. a, Applied research, 167(2), 1998, pp. 405-410
Authors:
TSUBOUCHI N
HORINO Y
ENDERS B
CHAYAHARA A
KINOMURA A
FUJII K
Citation: N. Tsubouchi et al., KINETIC-ENERGY INFLUENCE OF HYPERTHERMAL DUAL-ION BEAMS ON BONDING AND OPTICAL-PROPERTIES OF CARBON NITRIDE FILMS, Applied physics letters, 72(12), 1998, pp. 1412-1414
Authors:
IWAMATSU T
IPPOSHI T
YAMAGUCHI Y
IMAI Y
MAEGAWA S
TSUBOUCHI N
NISHIMURA T
Citation: T. Iwamatsu et al., THE INFLUENCE OF THE BURIED OXIDE DEFECTS ON THE GATE OXIDE RELIABILITY AND DRAIN LEAKAGE CURRENTS OF THE SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, JPN J A P 1, 36(12A), 1997, pp. 7104-7109
Authors:
MOKUNO Y
HORINO Y
CHAYAHARA A
KINOMURA A
TSUBOUCHI N
FUJII K
TERASAWA M
SEKIOKA T
MITAMURA T
Citation: Y. Mokuno et al., HIGH-ENERGY RESOLUTION PIXE WITH HIGH-EFFICIENCY USING THE HEAVY-ION MICROBEAM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 130(1-4), 1997, pp. 243-246
Authors:
ENDERS B
HORINO Y
TSUBOUCHI N
CHAYAHARA A
KINOMURA A
FUJII K
Citation: B. Enders et al., CARBON NITRIDE THIN-FILMS FORMED BY LOW-ENERGY ION-BEAM DEPOSITION WITH POSITIVE AND NEGATIVE-IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 121(1-4), 1997, pp. 73-78
Authors:
HORINO Y
TSUBOUCHI N
ENDERS B
HECK C
CHAYAHARA A
KINOMURA A
FUJII K
Citation: Y. Horino et al., DEVELOPMENT OF A NEW ION-BEAM DEPOSITION TECHNOLOGY FOR ULTRA-HIGH-PURITY FILM FABRICATION, Physica status solidi. a, Applied research, 160(2), 1997, pp. 583-589
Authors:
HECK C
CHAYAHARA A
TSUBOUCHI N
HORINO Y
FUJII K
IWAMI M
ABIKO K
Citation: C. Heck et al., FORMATION OF THIN AU FILMS USING NEGATIVE-ION-BEAM DEPOSITION, Physica status solidi. a, Applied research, 160(2), 1997, pp. 591-597
Authors:
AKIYAMA Y
TSUBOUCHI N
YUASA Y
Citation: Y. Akiyama et al., FREQUENT SOMATIC MUTATIONS OF HMSH3 WITH REFERENCE TO MICROSATELLITE INSTABILITY IN HEREDITARY NONPOLYPOSIS COLORECTAL CANCERS, Biochemical and biophysical research communications, 236(2), 1997, pp. 248-252
Authors:
TAKANO H
NAKANO H
MINAMI H
HOSOGI K
YOSHIDA N
SATO K
HIROSE Y
TSUBOUCHI N
Citation: H. Takano et al., ELECTRON-BEAM ULTRAVIOLET HYBRID EXPOSURE COMBINED WITH NOVEL BILAYERRESIST SYSTEM FOR A 0.15-MU-M T-SHAPED GATE FABRICATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3483-3488
Authors:
TAKANO H
SUMITANI K
MATSUOKA H
SATO K
ISHIHARA O
TSUBOUCHI N
Citation: H. Takano et al., SURFACE CHARACTERIZATION OF SIDEWALL PROTECTION FILM ON GAAS STEEP VIA HOLES ETCHED BY MAGNETRON ION ETCHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 112-117
Authors:
FUJII F
HORINO Y
TSUBOUCHI N
ENDERS B
CHAYAHARA A
KINOMURA A
Citation: F. Fujii et al., ION-BEAM DEPOSITION WITH POSITIVE AND NEGATIVE-IONS, Surface & coatings technology, 84(1-3), 1996, pp. 544-549
Authors:
MOKUNO Y
HORINO Y
KINOMURA A
CHAYAHARA A
TSUBOUCHI N
FUJII K
Citation: Y. Mokuno et al., PIXE ANALYSIS OF HEAVY-ELEMENTS IN SILICON USING MEV HEAVY-ION BEAMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 109, 1996, pp. 573-575
Authors:
UCHIDA Y
NAKAMURA F
HIROSE J
OSHIMA T
MORITA T
MORIZUKI S
SASAKI T
TSUBOUCHI N
Citation: Y. Uchida et al., CARDIOSCOPIC SPECTRUM OF THE LEFT-VENTRICULAR ENDOCARDIAL SURFACE ANDITS RELATION TO HISTOLOGIC-CHANGES IN IDIOPATHIC MYOCARDITIS, The American heart journal, 131(1), 1996, pp. 107-114
Authors:
KUROI T
KOBAYASHI M
SHIRAHATA M
OKUMURA Y
KUSUNOKI S
INUISHI M
TSUBOUCHI N
Citation: T. Kuroi et al., THE IMPACT OF NITROGEN IMPLANTATION INTO HIGHLY DOPED POLYSILICON GATES FOR HIGHLY RELIABLE AND HIGH-PERFORMANCE SUB-QUARTER-MICRON DUAL-GATE COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR, JPN J A P 1, 34(2B), 1995, pp. 771-775
Authors:
JOACHIM HO
YAMAGUCHI Y
INOUE Y
TSUBOUCHI N
Citation: Ho. Joachim et al., 2-DIMENSIONAL ANALYTICAL MODELING OF THE SOURCE DRAIN ENGINEERING INFLUENCE ON SHORT-CHANNEL EFFECTS IN SOI MOSFETS, JPN J A P 1, 34(2B), 1995, pp. 822-826
Authors:
SHIMIZU S
TANIZAWA M
KUSUNOKI S
INUISHI M
TSUBOUCHI N
Citation: S. Shimizu et al., NEW P-MOSFET HOT-CARRIER DEGRADATION MODEL FOR BIDIRECTIONAL OPERATION, JPN J A P 1, 34(2B), 1995, pp. 889-894
Authors:
MAEGAWA S
IPPOSHI T
MAEDA S
NISHIMURA H
TANINA O
KURIYAMA H
INOUE Y
NISHIMURA T
TSUBOUCHI N
Citation: S. Maegawa et al., A 0.4 MU-M GATE-ALL-AROUND TFT (GAT) USING A DUMMY NITRIDE PATTERN FOR HIGH-DENSITY MEMORIES, JPN J A P 1, 34(2B), 1995, pp. 895-899
Authors:
TAKANO H
HOSOGI K
KATO T
OKU T
KOHNO Y
NAKANO H
SATO K
FUNADA M
ISHIHARA O
TSUBOUCHI N
Citation: H. Takano et al., NOVEL WSI AU T-SHAPED GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR FABRICATION PROCESS FOR SUPER LOW-NOISE MICROWAVE MONOLITHIC INTEGRATED-CIRCUIT AMPLIFIERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1014-1017
Authors:
YAMAGUCHI Y
TAKAHASHI J
YAMAGUCHI T
WADA T
IWAMATSU T
JOACHIM HO
INOUE Y
NISHIMURA T
TSUBOUCHI N
Citation: Y. Yamaguchi et al., LOW-VOLTAGE OPERATION OF A HIGH-RESISTIVITY LOAD SOI SRAM CELL BY REDUCED BACK-GATE-BIAS EFFECT, IEICE transactions on electronics, E78C(7), 1995, pp. 812-817
Authors:
HORINO Y
TSUBOUCHI N
FUJII K
NAKATA T
TAKAGI T
Citation: Y. Horino et al., SIMULTANEOUS MASS-ANALYZED POSITIVE AND NEGATIVE LOW-ENERGY ION-BEAM DEPOSITION APPARATUS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 657-661
Authors:
HORINO Y
MOKUNO Y
TSUBOUCHI N
KINOMURA A
CHAYAHARA A
FUJII K
Citation: Y. Horino et al., ANALYSIS OF IRON BY PIXE USING HEAVY-ION MICROPROBES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 49-51
Authors:
MAEGAWA S
IPPOSHI T
MAEDA S
NISHIMURA H
ICHIKI T
ASHIDA M
TANINA O
INOUE Y
NISHIMURA T
TSUBOUCHI N
Citation: S. Maegawa et al., PERFORMANCE AND RELIABILITY IMPROVEMENTS IN POLY-SI TFTS BY FLUORINE IMPLANTATION INTO GATE POLY-SI, I.E.E.E. transactions on electron devices, 42(6), 1995, pp. 1106-1112