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Results: 1-25 |
Results: 25
OXYGEN AND THE THERMAL-STABILITY OF THIN COSI2 LAYERS
Authors: TUNG RT
Citation: Rt. Tung, OXYGEN AND THE THERMAL-STABILITY OF THIN COSI2 LAYERS, Applied physics letters, 72(20), 1998, pp. 2538-2540
NATIVE POINT-DEFECTS IN SI WITH A COSI2 FILM - SINGLE-CRYSTAL VERSUS POLYCRYSTALLINE
Authors: HERNER SB GOSSMANN HJ TUNG RT
Citation: Sb. Herner et al., NATIVE POINT-DEFECTS IN SI WITH A COSI2 FILM - SINGLE-CRYSTAL VERSUS POLYCRYSTALLINE, Applied physics letters, 72(18), 1998, pp. 2289-2291
A NOVEL TECHNIQUE FOR ULTRATHIN COSI2 LAYERS - OXIDE-MEDIATED EPITAXY
Authors: TUNG RT
Citation: Rt. Tung, A NOVEL TECHNIQUE FOR ULTRATHIN COSI2 LAYERS - OXIDE-MEDIATED EPITAXY, JPN J A P 1, 36(3B), 1997, pp. 1650-1654
ULTRATHIN SILICIDE FORMATION FOR ULSI DEVICES
Authors: TUNG RT
Citation: Rt. Tung, ULTRATHIN SILICIDE FORMATION FOR ULSI DEVICES, Applied surface science, 117, 1997, pp. 268-274
MORPHOLOGY OF TISI2 FILMS ON SI FORMED FROM CO-DEPOSITED TI AND SI
Authors: HERNER SB KRISHNAMOORTHY V NAMAN A JONES KS GOSSMANN HJ TUNG RT
Citation: Sb. Herner et al., MORPHOLOGY OF TISI2 FILMS ON SI FORMED FROM CO-DEPOSITED TI AND SI, Thin solid films, 302(1-2), 1997, pp. 127-132
INVESTIGATION OF MECHANISMS OF VACANCY GENERATION IN SILICON IN THE PRESENCE OF A TISI2 FILM
Authors: HERNER SB JONES KS GOSSMANN HJ TUNG RT POATE JM LUFTMAN HS
Citation: Sb. Herner et al., INVESTIGATION OF MECHANISMS OF VACANCY GENERATION IN SILICON IN THE PRESENCE OF A TISI2 FILM, Journal of applied physics, 82(2), 1997, pp. 583-588
GROWTH OF TISI2 FROM CODEPOSITED TISIX LAYERS AND INTERFACIAL LAYERS
Authors: TUNG RT FUJII K KIKUTA K CHIKAKI S KIKAWA T
Citation: Rt. Tung et al., GROWTH OF TISI2 FROM CODEPOSITED TISIX LAYERS AND INTERFACIAL LAYERS, Applied physics letters, 70(18), 1997, pp. 2386-2388
INHOMOGENEOUS SCHOTTKY BARRIERS AT AG SI(111) AND AG/SI(100) INTERFACES/
Authors: WEITERING HH SULLIVAN JP CAROLISSEN RJ PEREZSANDOZ R GRAHAM WR TUNG RT
Citation: Hh. Weitering et al., INHOMOGENEOUS SCHOTTKY BARRIERS AT AG SI(111) AND AG/SI(100) INTERFACES/, Journal of applied physics, 79(10), 1996, pp. 7820-7829
THE INFLUENCE OF TISI2 AND COSI2 GROWTH ON SI NATIVE POINT-DEFECTS - THE ROLE OF THE DIFFUSING SPECIES
Authors: HERNER SB JONES KS GOSSMANN HJ TUNG RT POATE JM LUFTMAN HS
Citation: Sb. Herner et al., THE INFLUENCE OF TISI2 AND COSI2 GROWTH ON SI NATIVE POINT-DEFECTS - THE ROLE OF THE DIFFUSING SPECIES, Applied physics letters, 68(20), 1996, pp. 2870-2872
SURFACE NUCLEATION OF TI SILICIDES AT ELEVATED-TEMPERATURES
Authors: TUNG RT
Citation: Rt. Tung, SURFACE NUCLEATION OF TI SILICIDES AT ELEVATED-TEMPERATURES, Applied physics letters, 68(14), 1996, pp. 1933-1935
INCREASED UNIFORMITY AND THERMAL-STABILITY OF COSI2 THIN-FILMS BY TI CAPPING
Authors: TUNG RT SCHREY F
Citation: Rt. Tung et F. Schrey, INCREASED UNIFORMITY AND THERMAL-STABILITY OF COSI2 THIN-FILMS BY TI CAPPING, Applied physics letters, 67(15), 1995, pp. 2164-2166
SAFETY OF IMPLANTATION OF A CARDIOVERTER-DEFIBRILLATOR WITHOUT GENERAL-ANESTHESIA IN AN ELECTROPHYSIOLOGY LABORATORY
Authors: TUNG RT BAJAJ AK
Citation: Rt. Tung et Ak. Bajaj, SAFETY OF IMPLANTATION OF A CARDIOVERTER-DEFIBRILLATOR WITHOUT GENERAL-ANESTHESIA IN AN ELECTROPHYSIOLOGY LABORATORY, The American journal of cardiology, 75(14), 1995, pp. 908-912
G-PROTEINS ACTIVATE ATP-SENSITIVE K-DEPENDENT GATING( CHANNELS BY ANTAGONIZING ATP)
Authors: TERZIC A TUNG RT INANOBE A KATADA T KURACHI Y
Citation: A. Terzic et al., G-PROTEINS ACTIVATE ATP-SENSITIVE K-DEPENDENT GATING( CHANNELS BY ANTAGONIZING ATP), Neuron, 12(4), 1994, pp. 885-893
IDIOPATHIC VENTRICULAR-FIBRILLATION IN OUT-OF-HOSPITAL CARDIAC-ARRESTSURVIVORS
Authors: TUNG RT SHEN WK HAMMILL SC GERSH BJ
Citation: Rt. Tung et al., IDIOPATHIC VENTRICULAR-FIBRILLATION IN OUT-OF-HOSPITAL CARDIAC-ARRESTSURVIVORS, PACE, 17(8), 1994, pp. 1405-1412
NUCLEOTIDE REGULATION OF ATP-SENSITIVE POTASSIUM CHANNELS
Authors: TERZIC A TUNG RT KURACHI Y
Citation: A. Terzic et al., NUCLEOTIDE REGULATION OF ATP-SENSITIVE POTASSIUM CHANNELS, Cardiovascular Research, 28(6), 1994, pp. 746-753
G-PROTEINS ACTIVATE ATP-SENSITIVE K-DEPENDENT GATING( CHANNELS BY ANTAGONIZING THE ATP)
Authors: TERZIC A TUNG RT INANOBE A KATADA T KURACHI Y
Citation: A. Terzic et al., G-PROTEINS ACTIVATE ATP-SENSITIVE K-DEPENDENT GATING( CHANNELS BY ANTAGONIZING THE ATP), Biophysical journal, 66(2), 1994, pp. 10000343-10000343
LONG-TERM SURVIVAL AFTER PERMANENT PACEMAKER IMPLANTATION FOR SICK SINUS SYNDROME
Authors: TUNG RT SHEN WK HAYES DL HAMMILL SC BAILEY KR GERSH BJ
Citation: Rt. Tung et al., LONG-TERM SURVIVAL AFTER PERMANENT PACEMAKER IMPLANTATION FOR SICK SINUS SYNDROME, The American journal of cardiology, 74(10), 1994, pp. 1016-1020
SCHOTTKY-BARRIER HEIGHT - DO WE REALLY UNDERSTAND WHAT WE MEASURE
Authors: TUNG RT
Citation: Rt. Tung, SCHOTTKY-BARRIER HEIGHT - DO WE REALLY UNDERSTAND WHAT WE MEASURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1546-1552
GIANT VARIATION IN SCHOTTKY-BARRIER HEIGHT OBSERVED IN THE CO SI SYSTEM/
Authors: SULLIVAN JP TUNG RT EAGLESHAM DJ SCHREY F GRAHAM WR
Citation: Jp. Sullivan et al., GIANT VARIATION IN SCHOTTKY-BARRIER HEIGHT OBSERVED IN THE CO SI SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1564-1570
ELECTRICAL CHARACTERISTICS OF SILVER SILICON CONTACTS
Authors: WEITERING HH SULLIVAN JP CAROLISSEN RJ GRAHAM WR TUNG RT
Citation: Hh. Weitering et al., ELECTRICAL CHARACTERISTICS OF SILVER SILICON CONTACTS, Applied surface science, 70-1, 1993, pp. 422-427
INTERFACIAL DEFECTS IN SILICIDES ON SI(100) - CORELESS DEFECTS, 1 12(111) DISLOCATIONS, AND TWINNING MECHANISMS/
Authors: EAGLESHAM DJ TUNG RT SULLIVAN JP SCHREY F
Citation: Dj. Eaglesham et al., INTERFACIAL DEFECTS IN SILICIDES ON SI(100) - CORELESS DEFECTS, 1 12(111) DISLOCATIONS, AND TWINNING MECHANISMS/, Journal of applied physics, 73(8), 1993, pp. 4064-4066
SINGLE-CRYSTAL SI NISI2 SI(100) STRUCTURES
Authors: TUNG RT EAGLESHAM DJ SCHREY F SULLIVAN JP
Citation: Rt. Tung et al., SINGLE-CRYSTAL SI NISI2 SI(100) STRUCTURES, Journal of applied physics, 73(12), 1993, pp. 8250-8257
CURRENT TRANSPORT IN PD N-INP DIODES FORMED AT ROOM AND LOW-TEMPERATURE - COMMENT
Authors: TUNG RT
Citation: Rt. Tung, CURRENT TRANSPORT IN PD N-INP DIODES FORMED AT ROOM AND LOW-TEMPERATURE - COMMENT, Journal of applied physics, 73(11), 1993, pp. 7993-7993
LONG-TERM SURVIVAL AFTER PACEMAKER FOR SICK SINUS SYNDROME
Authors: TUNG RT SHEN WK HAYES DL HAMMILL SC BAILEY KR GERSH BJ
Citation: Rt. Tung et al., LONG-TERM SURVIVAL AFTER PACEMAKER FOR SICK SINUS SYNDROME, Circulation, 88(4), 1993, pp. 19-19
PITFALLS IN THE MEASUREMENT OF METAL P-SI CONTACTS - THE EFFECT OF HYDROGEN PASSIVATION/
Authors: SULLIVAN JP GRAHAM WR TUNG RT SCHREY F
Citation: Jp. Sullivan et al., PITFALLS IN THE MEASUREMENT OF METAL P-SI CONTACTS - THE EFFECT OF HYDROGEN PASSIVATION/, Applied physics letters, 62(22), 1993, pp. 2804-2806
Risultati: 1-25 |