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Results: 1-25/52
Authors:
Tomilin, MG
Kerpeleva, SY
Terukov, EI
Citation: Mg. Tomilin et al., LC vision: The new application to silicon surface defects testing, MOLEC CRYST, 368, 2001, pp. 3769-3776
Authors:
Kon'kov, IO
Kuznetsov, AN
Pak, PE
Terukov, EI
Granitsyna, LS
Citation: Io. Kon'Kov et al., Erbium electroluminescence in an Al/a-Si : H(Er)/p-c-Si/Al heterostructure, TECH PHYS L, 27(7), 2001, pp. 542-543
Authors:
Bugaev, AA
Nikitin, SE
Terukov, EI
Citation: Aa. Bugaev et al., Effect of the metal-semiconductor phase transition on the capacitance of an aluminum-dielectric-vanadium dioxide heterostructure, TECH PHYS L, 27(11), 2001, pp. 924-925
Authors:
Bayazitov, RM
Batalov, RI
Terukov, EI
Kudoyarova, VK
Citation: Rm. Bayazitov et al., X-ray and luminescence analysis of finely dispersed beta-FeSi2 films formed on Si by pulsed ion treatment, PHYS SOL ST, 43(9), 2001, pp. 1633-1636
Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping
Authors:
Bresler, MS
Gusev, OB
Pak, PE
Terukov, EI
Yassievich, IN
Citation: Ms. Bresler et al., Effective excitation cross section of erbium in amorphous hydrogenated silicon under optical pumping, PHYS SOL ST, 43(4), 2001, pp. 625-628
Authors:
Abdullaev, MA
Magomedova, DK
Gadzhieva, RM
Terukov, EI
Nikolaev, YA
Rud', YV
Khokhlachev, PP
Citation: Ma. Abdullaev et al., Effect of deviations from stoichiometry on electrical conductivity and photoconductivity of CuInSe2 crystals, SEMICONDUCT, 35(8), 2001, pp. 870-872
Authors:
Kazanskii, AG
Mell, H
Terukov, EI
Forsh, PA
Citation: Ag. Kazanskii et al., Effect of temperature on photoconductivity and its decay in microcrystalline silicon, SEMICONDUCT, 35(8), 2001, pp. 953-955
Authors:
Koughia, KV
Terukov, EI
Citation: Kv. Koughia et Ei. Terukov, The relation between recombination at interface states and the anomalouslysmall exponent of the current-illuminance characteristic in microcrystalline silicon, SEMICONDUCT, 35(6), 2001, pp. 615-620
Authors:
Lysenko, VS
Tyagulskii, IP
Osiyuk, IN
Nazarov, AN
Vovk, YN
Gomenyuk, YV
Terukov, EI
Kon'kov, OI
Citation: Vs. Lysenko et al., Effect of erbium on electronic traps in PECVD-grown a-Si : H(Er)/c-Si structures, SEMICONDUCT, 35(6), 2001, pp. 621-626
Authors:
Kuznetsov, SV
Terukov, EI
Citation: Sv. Kuznetsov et Ei. Terukov, Influence of a-Si : H band tails on the occupation of dangling-bond statesand on photoconductivity, SEMICONDUCT, 35(6), 2001, pp. 656-658
Authors:
Mezdrogina, MM
Mosina, GN
Terukov, EI
Trapeznikova, IN
Citation: Mm. Mezdrogina et al., Self-organization processes and optical activation of the Er3+ ions in amorphous hydrogenated Er-doped silicon films, SEMICONDUCT, 35(6), 2001, pp. 684-687
Authors:
Kurova, IA
Ormont, NN
Terukov, EI
Trapeznikova, IN
Afanas'ev, VP
Gudovskikh, AS
Citation: Ia. Kurova et al., Electrical and photoelectric properties of a-Si : H layered films: The influence of thermal annealing, SEMICONDUCT, 35(3), 2001, pp. 353-356
Authors:
Mell, H
Nikolaev, YA
Rud', VY
Rud', YV
Terukov, EI
Citation: H. Mell et al., Photoelectric phenomena in (mu c(x)a(1-x))-Si : H/c-Si heterostructures, SEMICONDUCT, 35(11), 2001, pp. 1259-1262
Authors:
Batalov, RI
Bayazitov, RM
Terukov, EI
Kudoyarova, VK
Weiser, G
Kuehne, H
Citation: Ri. Batalov et al., A pulsed synthesis of beta-FeSi2 layers on silicon implanted with Fe+ ions, SEMICONDUCT, 35(11), 2001, pp. 1263-1269
Authors:
Baryshnikov, VG
Nikolaev, YA
Rud', VY
Rud', YV
Terukov, EI
Citation: Vg. Baryshnikov et al., Photosensitivity of a-C : H/c-Si heterojunctions, SEMICONDUCT, 35(11), 2001, pp. 1282-1284
Authors:
Medvedkin, GA
Terukov, EI
Sato, K
Hasegava, Y
Hirose, K
Citation: Ga. Medvedkin et al., Photoluminescence properties of polycrystalline ZnO/CdS/CuInGaSe2 solar cells at a low temperature, SEMICONDUCT, 35(11), 2001, pp. 1329-1334
Authors:
Kon'kov, OI
Terukov, EI
Granitsyna, LS
Citation: Oi. Kon'Kov et al., Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si : H(Er) films, SEMICONDUCT, 35(10), 2001, pp. 1197-1202
Authors:
Bresler, MS
Gusev, OB
Terukov, EI
Yassievich, IN
Zakharchenya, BP
Emel'yanov, VI
Kamenev, BV
Kashkarov, PK
Konstantinova, EA
Timoshenko, VY
Citation: Ms. Bresler et al., Stimulated emission in erbium-doped silicon structures under optical pumping, MAT SCI E B, 81(1-3), 2001, pp. 52-55
Authors:
Kleider, JP
Longeaud, C
Meaudre, R
Meaudre, M
Vignoli, S
Koughia, KV
Terukov, EI
Citation: Jp. Kleider et al., Electronic properties of Erbium doped amorphous silicon, MAT SCI E B, 81(1-3), 2001, pp. 71-73
Authors:
Terukov, EI
Kudoyarova, VK
Kuznetsov, AN
Koughia, KV
Weiser, G
Kuehne, H
Citation: Ei. Terukov et al., Photoluminescence of ytterbium doped amorphous silicon and silicon carbide, MAT SCI E B, 81(1-3), 2001, pp. 161-163
Authors:
Yassievich, IN
Bresler, MS
Gusev, OB
Pak, PE
Tsendin, KD
Terukov, EI
Citation: In. Yassievich et al., Mechanism of electroluminescence in the amorphous silicon-based erbium-doped structures, MAT SCI E B, 81(1-3), 2001, pp. 182-184
Authors:
Bresler, MS
Gusev, OB
Emel'yanov, VI
Zakharchenya, BP
Kamenev, BV
Kashkarov, PK
Konstantinova, EA
Timoshenko, VY
Terukov, EI
Yassievich, IN
Citation: Ms. Bresler et al., Stimulated emission in erbiumdoped silicon structures at optical pumping, IAN FIZ, 65(2), 2001, pp. 268-270
Authors:
Nazarov, AN
Pinchuk, VM
Yanchuk, TV
Lysenko, VS
Vovk, YN
Rangan, S
Ashok, S
Kudoyarova, V
Terukov, EI
Citation: An. Nazarov et al., Hydrogen effect on enhancement of defect reactions in semiconductors: example for silicon and vacancy defects, INT J HYD E, 26(5), 2001, pp. 521-526
Authors:
Forsh, PA
Kazanskii, AG
Mell, H
Terukov, EI
Citation: Pa. Forsh et al., Photoelectrical properties of microcrystalline silicon films, THIN SOL FI, 383(1-2), 2001, pp. 251-253
Authors:
Konstantinova, EA
Kamenev, BV
Kashkarov, PK
Timoshenko, VY
Kudoyarova, VK
Terukov, EI
Citation: Ea. Konstantinova et al., Correlation between photoluminescence efficiency and density of paramagnetic defects in Er-doped hydrogenated amorphous silicon, J NON-CRYST, 282(2-3), 2001, pp. 321-324