AAAAAA
Results: 1-25/31
Authors:
Pages, O
Ajjoun, M
Laurenti, JP
Bormann, D
Chauvet, C
Tournie, E
Faurie, JP
Gorochov, O
Citation: O. Pages et al., Raman study of ZnxBe1-xSe solid solutions, OPT MATER, 17(1-2), 2001, pp. 323-326
Authors:
Davies, JJ
Wolverson, D
Strauf, S
Michler, P
Gutowski, J
Klude, M
Ohkawa, K
Hommel, D
Tournie, E
Faurie, JP
Citation: Jj. Davies et al., Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe - art. no. 205206, PHYS REV B, 6420(20), 2001, pp. 5206
Authors:
Tournie, E
Vigue, F
Laugt, M
Faurie, JP
Citation: E. Tournie et al., Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy, J CRYST GR, 223(4), 2001, pp. 461-465
Authors:
Vigue, F
Tournie, E
Faurie, JP
Citation: F. Vigue et al., Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetection, IEEE J Q EL, 37(9), 2001, pp. 1146-1152
Authors:
Pinault, MA
Tournie, E
Citation: Ma. Pinault et E. Tournie, Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy, APPL PHYS L, 79(21), 2001, pp. 3404-3406
Authors:
Vigue, F
Tournie, E
Faurie, JP
Monroy, E
Calle, F
Munoz, E
Citation: F. Vigue et al., Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes, APPL PHYS L, 78(26), 2001, pp. 4190-4192
Authors:
Pinault, MA
Tournie, E
Citation: Ma. Pinault et E. Tournie, On the origin of carrier localization in Ga1-xInxNyAs1-y/GaAs quantum wells, APPL PHYS L, 78(11), 2001, pp. 1562-1564
Authors:
Faurie, JP
Tournie, E
Citation: Jp. Faurie et E. Tournie, ZnSe-based heterostructures for blue-green lasers, CR AC S IV, 1(1), 2000, pp. 23-33
Authors:
Chauvet, C
Tournie, E
Faurie, JP
Citation: C. Chauvet et al., Nature of the band gap in Zn1-xBexSe alloys, PHYS REV B, 61(8), 2000, pp. 5332-5336
Authors:
Lavagne, S
Levade, C
Vanderschaeve, G
Crestou, J
Tournie, E
Faurie, JP
Citation: S. Lavagne et al., Transmission electron microscopy study of crystal defects in ZnSe/GaAs(001) epilayers, J PHYS-COND, 12(49), 2000, pp. 10287-10293
Authors:
Chauvet, C
Tournie, E
Vennegues, P
Faurie, JP
Citation: C. Chauvet et al., Molecular beam epitaxy of ZnxBe1-xSe: Influence of the substrate nature and epilayer properties, J ELEC MAT, 29(6), 2000, pp. 883-886
Authors:
Desgardin, P
Oila, J
Saarinen, K
Hautojarvi, P
Tournie, E
Faurie, JP
Corbel, C
Citation: P. Desgardin et al., Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation, PHYS REV B, 62(23), 2000, pp. 15711-15717
Authors:
Tournie, E
Neu, G
Teisseire, M
Faurie, JP
Pelletier, H
Theys, B
Citation: E. Tournie et al., Spectroscopy of the interaction between nitrogen and hydrogen in ZnSe epitaxial layers, PHYS REV B, 62(19), 2000, pp. 12868-12874
Authors:
Neu, G
Tournie, E
Morhain, C
Teisseire, M
Faurie, JP
Citation: G. Neu et al., Spectroscopy of the phosphorus impurity in ZnSe epitaxial layers grown by molecular-beam epitaxy, PHYS REV B, 61(23), 2000, pp. 15789-15796
ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range
Authors:
Vigue, F
Bouille, A
Tournie, E
Faurie, JP
Citation: F. Vigue et al., ZnSe- and ZnMgBeSe-based Schottky barrier photodetectors for the blue and ultraviolet spectral range, PHYS ST S-A, 180(1), 2000, pp. 301-305
Authors:
Chauvet, C
Tournie, E
Faurie, JP
Citation: C. Chauvet et al., Molecular beam epitaxial growth and characterization of Be(Zn)Se on Si(001) and GaAs(001), J CRYST GR, 214, 2000, pp. 95-99
Authors:
Tournie, E
Pelletier, H
Neu, G
Theys, B
Lusson, A
Teisseire, M
Chauvet, C
Faurie, JP
Citation: E. Tournie et al., Hydrogen/deuterium: a probe to investigate carrier-compensation in ZnSe : N, J CRYST GR, 214, 2000, pp. 507-510
Authors:
Guenaud, C
Deleporte, E
Filoramo, A
Lelong, P
Delalande, C
Morhain, C
Tournie, E
Faurie, JP
Citation: C. Guenaud et al., Study of the band alignment in (Zn, Cd)Se/ZnSe quantum wells by means of photoluminescence excitation spectroscopy, J APPL PHYS, 87(4), 2000, pp. 1863-1868
Authors:
Vigue, F
Tournie, E
Faurie, JP
Citation: F. Vigue et al., ZnSe-based Schottky barrier photodetectors, ELECTR LETT, 36(4), 2000, pp. 352-354
Authors:
Pages, O
Ajjoun, M
Laurenti, JP
Bormann, D
Chauvet, C
Tournie, E
Faurie, JP
Citation: O. Pages et al., Raman study of ZnxBe1-xSe alloy (100) epitaxial layers, APPL PHYS L, 77(4), 2000, pp. 519-521
Authors:
Tournie, E
Pinault, MA
Vezian, S
Massies, J
Tottereau, O
Citation: E. Tournie et al., Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy, APPL PHYS L, 77(14), 2000, pp. 2189-2191
Authors:
Vigue, F
Tournie, E
Faurie, JP
Citation: F. Vigue et al., Zn(Mg)BeSe-based p-i-n photodiodes operating in the blue-violet and near-ultraviolet spectral range, APPL PHYS L, 76(2), 2000, pp. 242-244
Authors:
Chauvet, C
Bousquet, V
Tournie, E
Faurie, JP
Citation: C. Chauvet et al., New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys, J ELEC MAT, 28(6), 1999, pp. 662-665
Authors:
Tournie, E
Bousquet, V
Faurie, JP
Citation: E. Tournie et al., Molecular-beam epitaxy of BeTe layers on GaAs substrates, J CRYST GR, 202, 1999, pp. 494-497
Authors:
Bousquet, V
Laugt, M
Vennegues, P
Tournie, E
Faurie, JP
Citation: V. Bousquet et al., Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer, J CRYST GR, 202, 1999, pp. 498-501