AAAAAA

   
Results: 1-25 | 26-41
Results: 1-25/41
CHARACTERISTICS OF INGAN-ALGAN MULTIPLE-QUANTUM-WELL LASER-DIODES
Authors: BOUR DP KNEISSL M ROMANO LT MCCLUSKEY MD VANDEWALLE CG KRUSOR BS DONALDSON RM WALKER J DUNNROWICZ CJ JOHNSON NM
Citation: Dp. Bour et al., CHARACTERISTICS OF INGAN-ALGAN MULTIPLE-QUANTUM-WELL LASER-DIODES, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 498-504
HYDROGEN IN SILICON - FUNDAMENTAL PROPERTIES AND CONSEQUENCES FOR DEVICES
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, HYDROGEN IN SILICON - FUNDAMENTAL PROPERTIES AND CONSEQUENCES FOR DEVICES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1767-1771
ENERGIES OF VARIOUS CONFIGURATIONS OF HYDROGEN IN SILICON (VOL B 49, PG 4579, 1994)
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, ENERGIES OF VARIOUS CONFIGURATIONS OF HYDROGEN IN SILICON (VOL B 49, PG 4579, 1994), Physical review. B, Condensed matter, 58(3), 1998, pp. 1689-1689
DX-CENTER FORMATION IN WURTZITE AND ZINCBLENDE ALXGA1-XN
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, DX-CENTER FORMATION IN WURTZITE AND ZINCBLENDE ALXGA1-XN, Physical review. B, Condensed matter, 57(4), 1998, pp. 2033-2036
ENERGETICS AND ELECTRONIC-STRUCTURE OF STACKING-FAULTS IN ALN, GAN, AND INN
Authors: STAMPFL C VANDEWALLE CG
Citation: C. Stampfl et Cg. Vandewalle, ENERGETICS AND ELECTRONIC-STRUCTURE OF STACKING-FAULTS IN ALN, GAN, AND INN, Physical review. B, Condensed matter, 57(24), 1998, pp. 15052-15055
METASTABILITY OF OXYGEN DONORS IN ALGAN
Authors: MCCLUSKEY MD JOHNSON NM VANDEWALLE CG BOUR DP KNEISSL M WALUKIEWICZ W
Citation: Md. Mccluskey et al., METASTABILITY OF OXYGEN DONORS IN ALGAN, Physical review letters, 80(18), 1998, pp. 4008-4011
CLEAN AND AS-COVERED ZINCBLENDE GAN(001) SURFACES - NOVEL SURFACE-STRUCTURES AND SURFACTANT BEHAVIOR
Authors: NEUGEBAUER J ZYWIETZ T SCHEFFLER M NORTHRUP JE VANDEWALLE CG
Citation: J. Neugebauer et al., CLEAN AND AS-COVERED ZINCBLENDE GAN(001) SURFACES - NOVEL SURFACE-STRUCTURES AND SURFACTANT BEHAVIOR, Physical review letters, 80(14), 1998, pp. 3097-3100
ENERGETICS AND VIBRATIONAL FREQUENCIES OF INTERSTITIAL H-2-MOLECULES IN SEMICONDUCTORS
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, ENERGETICS AND VIBRATIONAL FREQUENCIES OF INTERSTITIAL H-2-MOLECULES IN SEMICONDUCTORS, Physical review letters, 80(10), 1998, pp. 2177-2180
HYDROGEN STATES IN SILICON
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, HYDROGEN STATES IN SILICON, Journal of non-crystalline solids, 230, 1998, pp. 111-119
THEORY OF DOPING AND DEFECTS IN III-V NITRIDES
Authors: VANDEWALLE CG STAMPFL C NEUGEBAUER J
Citation: Cg. Vandewalle et al., THEORY OF DOPING AND DEFECTS IN III-V NITRIDES, Journal of crystal growth, 190, 1998, pp. 505-510
DOPING OF ALXGA1-XN
Authors: STAMPFL C VANDEWALLE CG
Citation: C. Stampfl et Cg. Vandewalle, DOPING OF ALXGA1-XN, Applied physics letters, 72(4), 1998, pp. 459-461
LARGE BAND-GAP BOWING OF INXGA1-XN ALLOYS
Authors: MCCLUSKEY MD VANDEWALLE CG MASTER CP ROMANO LT JOHNSON NM
Citation: Md. Mccluskey et al., LARGE BAND-GAP BOWING OF INXGA1-XN ALLOYS, Applied physics letters, 72(21), 1998, pp. 2725-2726
INTERACTIONS OF HYDROGEN WITH NATIVE DEFECTS IN GAN
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, INTERACTIONS OF HYDROGEN WITH NATIVE DEFECTS IN GAN, Physical review. B, Condensed matter, 56(16), 1997, pp. 10020-10023
SURFACE SILICON-DEUTERIUM BOND-ENERGY FROM GAS-PHASE EQUILIBRATION - COMMENT
Authors: HERRING C VANDEWALLE CG
Citation: C. Herring et Cg. Vandewalle, SURFACE SILICON-DEUTERIUM BOND-ENERGY FROM GAS-PHASE EQUILIBRATION - COMMENT, Physical review. B, Condensed matter, 55(19), 1997, pp. 13314-13318
SMALL VALENCE-BAND OFFSETS AT GAN INGAN HETEROJUNCTIONS/
Authors: VANDEWALLE CG NEUGEBAUER J
Citation: Cg. Vandewalle et J. Neugebauer, SMALL VALENCE-BAND OFFSETS AT GAN INGAN HETEROJUNCTIONS/, Applied physics letters, 70(19), 1997, pp. 2577-2579
HETEROJUNCTION BAND-OFFSET ENGINEERING
Authors: FRANCIOSI A VANDEWALLE CG
Citation: A. Franciosi et Cg. Vandewalle, HETEROJUNCTION BAND-OFFSET ENGINEERING, Surface science reports, 25(1-4), 1996, pp. 1
STRETCHED-EXPONENTIAL RELAXATION MODELED WITHOUT INVOKING STATISTICALDISTRIBUTIONS
Authors: VANDEWALLE CG
Citation: Cg. Vandewalle, STRETCHED-EXPONENTIAL RELAXATION MODELED WITHOUT INVOKING STATISTICALDISTRIBUTIONS, Physical review. B, Condensed matter, 53(17), 1996, pp. 11292-11295
ATOMIC ARRANGEMENT AT THE ALN SIC INTERFACE
Authors: PONCE FA VANDEWALLE CG NORTHRUP JE
Citation: Fa. Ponce et al., ATOMIC ARRANGEMENT AT THE ALN SIC INTERFACE, Physical review. B, Condensed matter, 53(11), 1996, pp. 7473-7478
GALLIUM VACANCIES AND THE YELLOW LUMINESCENCE IN GAN
Authors: NEUGEBAUER J VANDEWALLE CG
Citation: J. Neugebauer et Cg. Vandewalle, GALLIUM VACANCIES AND THE YELLOW LUMINESCENCE IN GAN, Applied physics letters, 69(4), 1996, pp. 503-505
REDUCTION OF HOT-ELECTRON DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING - COMMENT
Authors: VANDEWALLE CG JACKSON WB
Citation: Cg. Vandewalle et Wb. Jackson, REDUCTION OF HOT-ELECTRON DEGRADATION IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY DEUTERIUM PROCESSING - COMMENT, Applied physics letters, 69(16), 1996, pp. 2441-2441
ROLE OF HYDROGEN IN DOPING OF GAN
Authors: NEUGEBAUER J VANDEWALLE CG
Citation: J. Neugebauer et Cg. Vandewalle, ROLE OF HYDROGEN IN DOPING OF GAN, Applied physics letters, 68(13), 1996, pp. 1829-1831
BAND DISCONTINUITIES AT HETEROJUNCTIONS BETWEEN CRYSTALLINE AND AMORPHOUS-SILICON
Authors: VANDEWALLE CG YANG LH
Citation: Cg. Vandewalle et Lh. Yang, BAND DISCONTINUITIES AT HETEROJUNCTIONS BETWEEN CRYSTALLINE AND AMORPHOUS-SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1635-1638
HYDROGEN INTERACTIONS WITH SELF-INTERSTITIALS IN SILICON
Authors: VANDEWALLE CG NEUGEBAUER J
Citation: Cg. Vandewalle et J. Neugebauer, HYDROGEN INTERACTIONS WITH SELF-INTERSTITIALS IN SILICON, Physical review. B, Condensed matter, 52(20), 1995, pp. 14320-14323
ENERGETICS OF BOND-CENTERED HYDROGEN IN STRAINED SI-SI BONDS
Authors: VANDEWALLE CG NICKEL NH
Citation: Cg. Vandewalle et Nh. Nickel, ENERGETICS OF BOND-CENTERED HYDROGEN IN STRAINED SI-SI BONDS, Physical review. B, Condensed matter, 51(4), 1995, pp. 2636-2639
ELECTRONIC-STRUCTURE AND PHASE-STABILITY OF GAAS1-XNX ALLOYS
Authors: NEUGEBAUER J VANDEWALLE CG
Citation: J. Neugebauer et Cg. Vandewalle, ELECTRONIC-STRUCTURE AND PHASE-STABILITY OF GAAS1-XNX ALLOYS, Physical review. B, Condensed matter, 51(16), 1995, pp. 10568-10571
Risultati: 1-25 | 26-41