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Results: 1-19 |
Results: 19
SILICON PIN RADIATION DETECTORS WITH ON-CHIP FRONT-END JUNCTION FIELD-EFFECT TRANSISTORS
Authors: DALLABETTA GF VERZELLESI G BOSCARDIN M BOSISIO L PIGNATEL GU FERRARIO L ZEN M SONCINI G
Citation: Gf. Dallabetta et al., SILICON PIN RADIATION DETECTORS WITH ON-CHIP FRONT-END JUNCTION FIELD-EFFECT TRANSISTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 417(2-3), 1998, pp. 325-331
HIGH-VOLTAGE OPERATION OF SILICON DEVICES FOR LHC EXPERIMENTS
Authors: BACCHETTA N BISELLO D CANDELORI A CAVONE M DALLABETTA GF DAROLD M DELISO G DELLORSO R FUOCHI PG MESSINEO A MIHUL A MILITARU O PACCAGNELLA A TONELLI G VERDINI PG VERZELLESI G WHEADON R
Citation: N. Bacchetta et al., HIGH-VOLTAGE OPERATION OF SILICON DEVICES FOR LHC EXPERIMENTS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 139-141
DEVELOPMENT OF A DETECTOR-COMPATIBLE JFET TECHNOLOGY ON HIGH-RESISTIVITY SILICON
Authors: DALLABETTA GF BOSCARDIN M PIGNATEL GU VERZELLESI G BOSISIO L FERRARIO L ZEN M SONCINI G
Citation: Gf. Dallabetta et al., DEVELOPMENT OF A DETECTOR-COMPATIBLE JFET TECHNOLOGY ON HIGH-RESISTIVITY SILICON, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 409(1-3), 1998, pp. 346-350
DESIGN AND OPTIMIZATION OF AN NPN SILICON BIPOLAR PHOTOTRANSISTOR FOROPTICAL POSITION ENCODERS
Authors: DALLABETTA GF PIGNATEL GU VERZELLESI G BELLUTTI P BOSCARDIN M FERRARIO L ZORZI N MAGLIONE A
Citation: Gf. Dallabetta et al., DESIGN AND OPTIMIZATION OF AN NPN SILICON BIPOLAR PHOTOTRANSISTOR FOROPTICAL POSITION ENCODERS, Microelectronics, 29(1-2), 1998, pp. 49-58
NUMERICAL-ANALYSIS OF ISFET AND LAPS DEVICES
Authors: VERZELLESI G COLALONGO L PASSERI D MARGESIN B RUDAN M SONCINI G CIAMPOLINI P
Citation: G. Verzellesi et al., NUMERICAL-ANALYSIS OF ISFET AND LAPS DEVICES, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 402-408
SI-PIN X-RAY-DETECTOR TECHNOLOGY
Authors: DALLABETTA GF PIGNATEL GU VERZELLESI G BOSCARDIN M
Citation: Gf. Dallabetta et al., SI-PIN X-RAY-DETECTOR TECHNOLOGY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 395(3), 1997, pp. 344-348
RADIATION EFFECTS ON BREAKDOWN CHARACTERISTICS OF MULTIGUARDED DEVICES
Authors: DAROLD M PACCAGNELLA A DARE A VERZELLESI G BACCHETTA N WHEADON R DALLABETTA GF CANDELORI A SONCINI G BISELLO D
Citation: M. Darold et al., RADIATION EFFECTS ON BREAKDOWN CHARACTERISTICS OF MULTIGUARDED DEVICES, IEEE transactions on nuclear science, 44(3), 1997, pp. 721-727
MODELING OF LIGHT-ADDRESSABLE POTENTIOMETRIC SENSORS
Authors: COLALONGO L VERZELLESI G PASSERI D LUI A CIAMPOLINI P RUDAN MV
Citation: L. Colalongo et al., MODELING OF LIGHT-ADDRESSABLE POTENTIOMETRIC SENSORS, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2083-2090
SPICE MODELING OF IMPACT IONIZATION EFFECTS IN SILICON BIPOLAR-TRANSISTORS
Authors: VERZELLESI G DALFABBRO A PAVAN P VENDRAME L ZABOTTO E ZANINI A CHANTRE A ZANONI E
Citation: G. Verzellesi et al., SPICE MODELING OF IMPACT IONIZATION EFFECTS IN SILICON BIPOLAR-TRANSISTORS, IEE proceedings. Circuits, devices and systems, 143(1), 1996, pp. 33-40
FORWARD AND REVERSE CHARACTERISTICS OF IRRADIATED MOSFETS
Authors: PACCAGNELLA A CESCHIA M VERZELLESI G DALLABETTA GF BELLUTTI P FUOCHI PG SONCINI G
Citation: A. Paccagnella et al., FORWARD AND REVERSE CHARACTERISTICS OF IRRADIATED MOSFETS, IEEE transactions on nuclear science, 43(3), 1996, pp. 797-804
DESIGN OF AN N-CHANNEL JFET ON HIGH-RESISTIVITY SILICON FOR RADIATION-DETECTOR ON-CHIP FRONT-END ELECTRONICS
Authors: DALLABETTA GF VERZELLESI G PIGNATEL GU AMON S BOSCARDIN M SONCINI G
Citation: Gf. Dallabetta et al., DESIGN OF AN N-CHANNEL JFET ON HIGH-RESISTIVITY SILICON FOR RADIATION-DETECTOR ON-CHIP FRONT-END ELECTRONICS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(2-3), 1995, pp. 473-479
INFLUENCE OF IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL ON BIPOLAR-TRANSISTOR PARAMETERS
Authors: VENDRAME L ZABOTTO E DALFABBRO A ZANINI A VERZELLESI G ZANONI E CHANTRE A PAVAN P
Citation: L. Vendrame et al., INFLUENCE OF IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL ON BIPOLAR-TRANSISTOR PARAMETERS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1636-1646
FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY
Authors: BACCHETTA N BISELLO D CANALI C DAROS R GIRALDO A GOTRA Y PACCAGNELLA A PIACENTINO GM VERZELLESI G
Citation: N. Bacchetta et al., FOXFET BIASED MICROSTRIP DETECTORS - AN INVESTIGATION OF RADIATION SENSITIVITY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 342(1), 1994, pp. 39-48
PUNCH-THROUGH CHARACTERISTICS OF FOXFET BIASED DETECTORS
Authors: BACCHETTA N BISELLO D DAROS R GIRALDO A GOTRA Y PACCAGNELL A VERZELLESI G
Citation: N. Bacchetta et al., PUNCH-THROUGH CHARACTERISTICS OF FOXFET BIASED DETECTORS, IEEE transactions on nuclear science, 41(4), 1994, pp. 804-810
EXTRACTION OF DC BASE PARASITIC RESISTANCE OF BIPOLAR-TRANSISTORS BASED ON IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL
Authors: VERZELLESI G TURETTA R PAVAN P COLLINI A CHANTRE A MARTY A CANALI C ZANONI E
Citation: G. Verzellesi et al., EXTRACTION OF DC BASE PARASITIC RESISTANCE OF BIPOLAR-TRANSISTORS BASED ON IMPACT-IONIZATION-INDUCED BASE CURRENT REVERSAL, IEEE electron device letters, 14(9), 1993, pp. 431-434
DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION
Authors: BACCHETTA N BISELLO D CANALI C FUOCHI PG GOTRA Y PACCAGNELLA A VERZELLESI G
Citation: N. Bacchetta et al., DEGRADATION OF SILICON AC-COUPLED MICROSTRIP DETECTORS INDUCED BY RADIATION, IEEE transactions on nuclear science, 40(6), 1993, pp. 2001-2007
RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS
Authors: BACCHETTA N BISELLO D CANALI C DAROS R FUOCHI PG FUSARO G GIRALDO A GOTRA Y PACCAGNELLA A VERZELLESI G
Citation: N. Bacchetta et al., RADIATION TOLERANCE OF THE FOXFET BIASING SCHEME FOR AC-COUPLED SI MICROSTRIP DETECTORS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1602-1609
PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR
Authors: VERZELLESI G BACCARANI G CANALI C PAVAN P VENDRAME L ZANONI E
Citation: G. Verzellesi et al., PREDICTION OF IMPACT-IONIZATION-INDUCED SNAP-BACK IN ADVANCED SI N-P-N BJTS BY MEANS OF A NONLOCAL ANALYTICAL MODEL FOR THE AVALANCHE MULTIPLICATION FACTOR, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2296-2300
NEW METHOD FOR EXTRACTING COLLECTOR SERIES RESISTANCE OF BIPOLAR-TRANSISTORS
Authors: VERZELLESI G TURETTA R CAPPELLIN M PAVAN P CHANTRE A ZANONI E
Citation: G. Verzellesi et al., NEW METHOD FOR EXTRACTING COLLECTOR SERIES RESISTANCE OF BIPOLAR-TRANSISTORS, Electronics Letters, 29(10), 1993, pp. 931-933
Risultati: 1-19 |