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Results: 1-25/42
Authors:
O'Donnell, KP
Martin, RW
Trager-Cowan, C
White, ME
Esona, K
Deatcher, C
Middleton, PG
Jacobs, K
Van der Stricht, W
Merlet, C
Gil, B
Vantomme, A
Mosselmans, JFW
Citation: Kp. O'Donnell et al., The dependence of the optical energies on InGaN composition, MAT SCI E B, 82(1-3), 2001, pp. 194-196
Authors:
Koops, GEJ
Nauwelaerts, S
Venegas, R
Vantomme, A
Pattyn, H
Citation: Gej. Koops et al., Sn nanoclusters formed in thermally grown SiO2 studied by Mossbauer spectroscopy, NUCL INST B, 178, 2001, pp. 93-96
Authors:
Vantomme, A
Hogg, SM
Wu, MF
Pipeleers, B
Swart, M
Goodman, S
Auret, D
Iakoubovskii, K
Adriaenssens, GJ
Jacobs, K
Moerman, I
Citation: A. Vantomme et al., Suppression of rare-earth implantation-induced damage in GaN, NUCL INST B, 175, 2001, pp. 148-153
Authors:
Wahl, U
Vantomme, A
Langouche, G
Araujo, JP
Citation: U. Wahl et al., Emission channeling studies of implanted Er-167m in InP, NUCL INST B, 175, 2001, pp. 262-267
Authors:
Hogg, SM
Vantomme, A
Wu, MF
Pipeleers, B
Swart, M
Citation: Sm. Hogg et al., Temperature and angular effects on the channelled implantation of Er into Si < 111 >, NUCL INST B, 175, 2001, pp. 585-589
Authors:
Wu, MF
Vantomme, A
Hogg, S
Langouche, G
Van der Stricht, W
Jacobs, K
Moerman, I
Citation: Mf. Wu et al., Rutherford backscattering/channeling study of a thin AlGaN layer on Al(2)O(0)3(0001), NUCL INST B, 174(1-2), 2001, pp. 181-186
Authors:
Wahl, U
Vantomme, A
Langouche, G
Correia, JG
Peralta, L
Citation: U. Wahl et al., Direct evidence for implanted Fe on substitutional Ga sites in GaN, APPL PHYS L, 78(21), 2001, pp. 3217-3219
Authors:
Mahan, JE
Vantomme, A
Citation: Je. Mahan et A. Vantomme, Trends in sputter yield data in the film deposition regime, PHYS REV B, 61(12), 2000, pp. 8516-8525
Authors:
Trager-Cowan, C
McColl, D
Sweeney, F
Grimson, STF
Treguer, JF
Mohammed, A
Middleton, PG
Manson-Smith, SK
O'Donnell, KP
Van der Stricht, W
Moerman, I
Demeester, P
Wu, MF
Vantomme, A
Zubia, D
Hersee, SD
Citation: C. Trager-cowan et al., Probing nitride thin films in 3-dimensions using a variable energy electron beam, MRS I J N S, 5, 2000, pp. NIL_347-NIL_352
Authors:
Vantomme, A
Wu, MF
Hogg, S
Langouche, G
Jacobs, K
Moerman, I
White, ME
O'Donnell, KP
Nistor, L
Van Landuyt, J
Bender, H
Citation: A. Vantomme et al., Comparative study of structural properties and photoluminescence in InGaN layers with a high In content, MRS I J N S, 5, 2000, pp. NIL_604-NIL_609
Authors:
Wu, MF
Yao, SD
Vantomme, A
Hogg, S
Langouche, G
Van der Stricht, W
Jacobs, K
Moerman, I
Li, J
Zhang, GY
Citation: Mf. Wu et al., Elastic strain in InGaN and AlGaN layers, MAT SCI E B, 75(2-3), 2000, pp. 232-235
Authors:
Kunnen, E
Temst, K
Moshchalkov, VV
Bruynseraede, Y
Mangin, S
Vantomme, A
Hoser, A
Citation: E. Kunnen et al., The magnetic structure of epitaxial Cr films on MgO, PHYSICA B, 276, 2000, pp. 738-739
Authors:
Jin, S
Bender, H
Wu, MF
Vantomme, A
Langouche, G
Citation: S. Jin et al., Formation of (Nd,Y)-silicides by sequential channeled implantation of Y and Nd ions, NUCL INST B, 160(3), 2000, pp. 349-354
Authors:
Vantomme, A
de Potter, M
Baklanov, M
Maex, K
Citation: A. Vantomme et al., Proceedings of the Third European Workshop on Materials for Advanced Metallization - Ostende, Belgium, March 7-10, 1999 - Preface, MICROEL ENG, 50(1-4), 2000, pp. 5-5
Authors:
Hogg, SM
Vantomme, A
Wu, MF
Langouche, G
Citation: Sm. Hogg et al., Electrical properties of rare earth silicides produced by channeled ion beam synthesis, MICROEL ENG, 50(1-4), 2000, pp. 211-215
Authors:
Vantomme, A
Langouche, G
Mahan, JE
Becker, JP
Citation: A. Vantomme et al., Growth mechanism and optical properties of semiconducting Mg2Si thin films, MICROEL ENG, 50(1-4), 2000, pp. 237-242
Authors:
Degroote, B
Pattyn, H
Degroote, S
Vantomme, A
Dekoster, J
Langouche, G
Citation: B. Degroote et al., Diffusion-induced step decoration of Co on Ag(001), THIN SOL FI, 380(1-2), 2000, pp. 111-113
Authors:
Gladyszewski, G
Temst, K
Mae, K
Schad, R
Belien, F
Kunnen, E
Verbanck, G
Bruynseraede, Y
Moons, R
Vantomme, A
Blasser, S
Langouche, G
Citation: G. Gladyszewski et al., Structure of Ag/Fe superlattices probed at different length scales, THIN SOL FI, 366(1-2), 2000, pp. 51-62
Authors:
Wahl, U
Vantomme, A
Langouche, G
Correia, JG
Citation: U. Wahl et al., Lattice location and stability of ion implanted Cu in Si, PHYS REV L, 84(7), 2000, pp. 1495-1498
Authors:
Wahl, U
Vantomme, A
Langouche, G
Araujo, JP
Peralta, L
Correia, JG
Citation: U. Wahl et al., Emission channeling studies of Pr in GaN, J APPL PHYS, 88(3), 2000, pp. 1319-1324
Authors:
Nistor, L
Bender, H
Vantomme, A
Wu, MF
Van Landuyt, J
O'Donnell, KP
Martin, R
Jacobs, K
Moerman, I
Citation: L. Nistor et al., Direct evidence of spontaneous quantum dot formation in a thick InGaN epilayer, APPL PHYS L, 77(4), 2000, pp. 507-509
Authors:
Wahl, U
Vantomme, A
Langouche, G
Araujo, JP
Peralta, L
Correia, JG
Citation: U. Wahl et al., Lattice location of implanted Cu in highly doped Si, APPL PHYS L, 77(14), 2000, pp. 2142-2144
Authors:
Dezsi, I
Fetzer, C
Kiss, M
Pattyn, H
Vantomme, A
Langouche, G
Citation: I. Dezsi et al., Metastable phases of cobalt-ironsilicide formed by sequential implantationof Co and Fe in Si (111), APPL PHYS L, 76(14), 2000, pp. 1917-1919
Authors:
Donaton, RA
Jin, S
Bender, H
Conard, T
De Wolf, I
Maex, K
Vantomme, A
Langouche, G
Citation: Ra. Donaton et al., New technique for forming continuous, smooth, and uniform ultrathin (3 nm)PtSi layers, EL SOLID ST, 2(4), 1999, pp. 195-197
Authors:
Wu, MF
Yao, SD
Vantomme, A
Hogg, SM
Langouche, G
Li, J
Zhang, GY
Citation: Mf. Wu et al., Strain in AlGaN layer studied by Rutherford backscattering/channeling and x-ray diffraction, J VAC SCI B, 17(4), 1999, pp. 1502-1506