Citation: Hj. Wen et al., CURRENT OSCILLATIONS IN THIN METAL-OXIDE-SEMICONDUCTOR STRUCTURES OBSERVED BY BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2296-2301
Citation: Hj. Wen et R. Ludeke, LOCALIZED DEGRADATION STUDIES OF ULTRATHIN GATE OXIDES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1735-1740
Citation: Hj. Wen et al., SIZE AND DENSITY OF FLOCCULATED SLUDGE FLOCS, Journal of environmental science and health. Part A: Environmental science and engineering, 32(4), 1997, pp. 1125-1137
Citation: Ci. Liu et al., COMPLEX DYNAMICS RESULTING FROM COUPLING BETWEEN OREGONATORS IN A SERIES OF 2 CSTRS WITH RECYCLE, The journal of physical chemistry. A, Molecules, spectroscopy, kinetics, environment, & general theory, 101(2), 1997, pp. 170-173
Citation: Hj. Wen et R. Ludeke, INVESTIGATION OF EXISTING DEFECTS AND DEFECT GENERATION IN DEVICE-GRADE SIO2 BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1080-1088
Citation: Hj. Wen et al., IMAGE FORCE EFFECTS AND THE DIELECTRIC RESPONSE OF SIO2 IN ELECTRON-TRANSPORT ACROSS METAL-OXIDE-SEMICONDUCTOR STRUCTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 784-789
Citation: R. Ludeke et Hj. Wen, GATE OXIDE CHARACTERIZATION WITH BALLISTIC-ELECTRON-EMISSION MICROSCOPY, Microelectronic engineering, 36(1-4), 1997, pp. 255-262
Authors:
DAHNEPRIETSCH M
MANKE I
KALKA T
WEN HJ
KAINDL G
Citation: M. Dahneprietsch et al., LOW-DENSITY OF STATES AT THE EPITAXIAL CAF2-SI(111) INTERFACE, Journal of physics. D, Applied physics, 30(12), 1997, pp. 48-50
Citation: R. Ludeke et Hj. Wen, LOCALIZED ELECTRON TRAPPING AND TRAP DISTRIBUTIONS IN SIO2 GATE OXIDES, Applied physics letters, 71(21), 1997, pp. 3123-3125
Citation: R. Ludeke et al., STRESSING AND HIGH-FIELD TRANSPORT STUDIES ON DEVICE-GRADE SIO2 BY BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2855-2863
Citation: Hj. Wen et al., FORMATION AND DYNAMIC ROUTEING OF PART FAMILIES AMONG FLEXIBLE MANUFACTURING CELLS, International Journal of Production Research, 34(8), 1996, pp. 2229-2245
Authors:
WEN HJ
DAHNEPRIETSCH M
BAUER A
MANKE I
KAINDL G
Citation: Hj. Wen et al., STABILITY OF CAF2 SI(111) AND AL/CAF2/SI(111) INTERFACE SYSTEMS STUDIED WITH PHOTOELECTRON-SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1645-1652
Authors:
MANKE I
WEN HJ
HOHR A
BAUER A
DAHNEPRIETSCH M
KAINDL G
Citation: I. Manke et al., FORMATION OF THE CESIX SI(111) INTERFACE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(4), 1995, pp. 1657-1665
Authors:
WEN HJ
DAHNEPRIETSCH M
BAUER A
CUBERES MT
MANKE I
KAINDL G
Citation: Hj. Wen et al., THERMAL ANNEALING OF THE EPITAXIAL AL SI(111)7X7 INTERFACE - AL CLUSTERING, INTERFACIAL REACTION, AND AL-INDUCED P(+) DOPING/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(5), 1995, pp. 2399-2406
Citation: Ch. Smith et al., REGRESSION-BASED DUE-DATE ASSIGNMENT RULES FOR IMPROVED ASSEMBLY SHOPPERFORMANCE, International Journal of Production Research, 33(9), 1995, pp. 2375-2385
Authors:
CUBERES MT
BAUER A
WEN HJ
VANDRE D
PRIETSCH M
KAINDL G
Citation: Mt. Cuberes et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY ON THE AU N-SI(111)7X7 INTERFACE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2422-2428
Authors:
CUBERES MT
BAUER A
WEN HJ
PRIETSCH M
KAINDL G
Citation: Mt. Cuberes et al., PROBING THE CAF2 DENSITY-OF-STATES AT AU CAF2/N-SI(111) INTERFACES WITH PHOTOELECTRON-SPECTROSCOPY AND BALLISTIC-ELECTRON-EMISSION MICROSCOPY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2646-2652
Authors:
CUBERES MT
BAUER A
WEN HJ
PRIETSCH M
KAINDL G
Citation: Mt. Cuberes et al., BALLISTIC-ELECTRON-EMISSION MICROSCOPY STUDY OF THE AU SI(111)7X7 ANDAU/CAF2/SI(111)7X7 INTERFACES/, Applied physics letters, 64(17), 1994, pp. 2300-2302