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Results: 1-25/38
Authors:
WEIGAND R
ZACHARIAS M
BLASING J
VEIT P
CHRISTEN J
WENDLER E
Citation: R. Weigand et al., ON THE ORIGIN OF BLUE-LIGHT EMISSION FROM GE-NANOCRYSTALS CONTAINING A-SIOX FILMS, Superlattices and microstructures, 23(2), 1998, pp. 349-354
Authors:
WENDLER E
HEFT A
WESCH W
Citation: E. Wendler et al., ION-BEAM-INDUCED DAMAGE AND ANNEALING BEHAVIOR IN SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 105-117
Authors:
WESCH W
HEFT A
HOBERT H
PEITER G
WENDLER E
BACHMANN T
Citation: W. Wesch et al., HIGH-DOSE MEV OXYGEN-ION IMPLANTATION INTO SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 141(1-4), 1998, pp. 160-163
Authors:
NEJIM A
BARRADAS NP
JEYNES C
CRISTIANO F
WENDLER E
GARTNER K
SEALY BJ
Citation: A. Nejim et al., RESIDUAL POST ANNEAL DAMAGE OF GE-COIMPLANTATION AND C-COIMPLANTATIONOF SI DETERMINED BY QUANTITATIVE RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 244-248
Authors:
WENDLER E
GAIDUK PI
Citation: E. Wendler et Pi. Gaiduk, RUTHERFORD BACKSCATTERING ANALYSIS OF DAMAGE IN ION-IMPLANTED GAAS AL0.44GA0.56AS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 488-493
Authors:
TUROS A
WIERZCHOWSKI W
WIETESKA K
WENDLER E
WESCH W
GRAEFF W
GROTZSCHEL R
STRUPINSKI W
Citation: A. Turos et al., ION-BOMBARDMENT INDUCED RELAXATION OF STRAINED ALGAAS GAAS HETEROSTRUCTURES STUDIED BY THE COMPLEMENTARY USE OF RBS-CHANNELING AND X-RAY SYNCHROTRON-RADIATION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1062-1067
Authors:
HERRE O
WESCH W
WENDLER E
GAIDUK PI
KOMAROV FF
KLAUMUNZER S
MEIER P
Citation: O. Herre et al., FORMATION OF DISCONTINUOUS TRACKS IN SINGLE-CRYSTALLINE INP BY 250-MEV XE-ION IRRADIATION, Physical review. B, Condensed matter, 58(8), 1998, pp. 4832-4837
Authors:
WENDLER E
HEFT A
WESCH W
PEITER G
DUNKEN HH
Citation: E. Wendler et al., ANNEALING STUDIES OF B-SIC BY RBS AND OPTICAL SUBGAP SPECTROSCOPY( IMPLANTED 6H), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 341-346
Authors:
EICHLER S
GEBAUER J
BORNER F
POLITY A
KRAUSEREHBERG R
WENDLER E
WEBER B
WESCH W
BORNER H
Citation: S. Eichler et al., DEFECTS IN SILICON AFTER B- A STUDY USING A POSITRON-BEAM TECHNIQUE, RUTHERFORD BACKSCATTERING, SECONDARY NEUTRAL MASS-SPECTROSCOPY, AND INFRARED-ABSORPTION SPECTROSCOPY( IMPLANTATION ), Physical review. B, Condensed matter, 56(3), 1997, pp. 1393-1403
Authors:
WENDLER E
OPFERMANN T
GAIDUK PI
Citation: E. Wendler et al., ION MASS AND TEMPERATURE-DEPENDENCE OF DAMAGE PRODUCTION IN ION-IMPLANTED INP, Journal of applied physics, 82(12), 1997, pp. 5965-5975
Authors:
HERRE O
WENDLER E
ACHTZIGER N
LICHT T
REISLOHNER U
RUB M
BACHMANN T
WESCH W
GAIDUK PI
KOMAROV FF
Citation: O. Herre et al., DAMAGE PRODUCTION IN GAAS DURING MEV ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 230-235
Authors:
WEBER B
WENDLER E
GARTNER K
STOCK DM
WESCH W
Citation: B. Weber et al., INVESTIGATION OF WEAKLY DAMAGED [110]SILICON, [111]SILICON AND [100]SILICON BY MEANS OF TEMPERATURE-DEPENDENT DECHANNELING MEASUREMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 113-118
Authors:
WENDLER E
SCHREMPEL F
MULLER P
GARTNER K
WESCH W
Citation: E. Wendler et al., DETERMINATION OF LATTICE DISPLACEMENTS IN 2 MEV SE+ IMPLANTED GAAS BYRES AND PIXE CHANNELING EXPERIMENTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 367-371
Authors:
WENDLER E
HERRMANN U
WESCH W
DUNKEN HH
Citation: E. Wendler et al., STRUCTURAL-CHANGES AND SI REDISTRIBUTION IN SI+ IMPLANTED SILICA GLASS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 332-337
Authors:
WENDLER E
HEFT A
ZAMMIT U
GLASER E
MARINELLI M
WESCH W
Citation: E. Wendler et al., SUBGAP OPTICAL-PROPERTIES OF ION-IMPLANTED SIC, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 116(1-4), 1996, pp. 398-403
Authors:
HEFT A
WENDLER E
HEINDL J
BACHMANN T
GLASER E
STRUNK HP
WESCH W
Citation: A. Heft et al., DAMAGE PRODUCTION AND ANNEALING OF ION-IMPLANTED SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 113(1-4), 1996, pp. 239-243
Authors:
HERRMANN U
DUNKEN HH
WENDLER E
WESCH W
Citation: U. Herrmann et al., SIMULATION OF IR AND VIS-NIR SPECTRA OF SI+ IMPLANTED SIO2 GLASS, Journal of non-crystalline solids, 204(3), 1996, pp. 273-281
Authors:
HERRMANN U
WENDLER E
DUNKEN HH
WESCH W
SEIFERT F
Citation: U. Herrmann et al., FORMATION OF AMORPHOUS AND NANO-CRYSTALLINE CARBON IN C+ IMPLANTED SILICA GLASS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 100(9), 1996, pp. 1596-1601
Authors:
HEFT A
WENDLER E
BACHMAN T
GLASER E
WESCH W
Citation: A. Heft et al., DEFECT PRODUCTION AND ANNEALING IN ION-IMPLANTED SILICON-CARBIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 142-146
Authors:
BACHMANN T
WENDLER E
WESCH W
HERRE O
WILSON RJ
JEYNES C
GWILLIAM RM
SEALY BJ
Citation: T. Bachmann et al., DAMAGE PRODUCTION DURING MEV ION-IMPLANTATION IN GAAS AND INAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 619-622
Authors:
ZAMMIT U
MADHUSOODANAN KN
MARINELLI M
SCUDIERI F
MERCURI F
WENDLER E
WESCH W
Citation: U. Zammit et al., OPTICAL-ABSORPTION IN ION-IMPLANTED SI FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 241-244
Authors:
WESCH W
WENDLER E
BACHMANN T
HERRE O
Citation: W. Wesch et al., A COMPARATIVE-STUDY OF MEV AND MEDIUM-ENERGY ION-IMPLANTATION INTO III-V COMPOUNDS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 290-293
Authors:
WENDLER E
WILSON RJ
JEYNES C
WESCH W
GARTNER K
GWILLIAM RM
SEALY BJ
Citation: E. Wendler et al., 2 MEV AS+ IMPLANTATION IN INAS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 298-301
Authors:
WESCH W
HEFT A
WENDLER E
BACHMANN T
GLASER E
Citation: W. Wesch et al., HIGH-TEMPERATURE ION-IMPLANTATION OF SILICON-CARBIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 335-338
Authors:
WENDLER E
OPFERMANN T
MULLER P
WESCH W
Citation: E. Wendler et al., TEMPERATURE AND DOSE DEPENDENCE OF DAMAGE PRODUCTION IN SI+ AND SE+ IMPLANTED INP, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 106(1-4), 1995, pp. 303-307