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Results: 1-13 |
Results: 13
MEASUREMENT OF MOSFET SUBSTRATE DOPANT PROFILE VIA INVERSION LAYER-TO-SUBSTRATE CAPACITANCE
Authors: CHIANG CYT HSU CTC YEOW YT GHODSI R
Citation: Cyt. Chiang et al., MEASUREMENT OF MOSFET SUBSTRATE DOPANT PROFILE VIA INVERSION LAYER-TO-SUBSTRATE CAPACITANCE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1732-1736
SMALL-SIGNAL GATE-TO-DRAIN CAPACITANCE OF MOSFET AS A DIAGNOSTIC-TOOLFOR HOT-CARRIER-INDUCED DEGRADATION
Authors: GHODSI R YEOW YT
Citation: R. Ghodsi et Yt. Yeow, SMALL-SIGNAL GATE-TO-DRAIN CAPACITANCE OF MOSFET AS A DIAGNOSTIC-TOOLFOR HOT-CARRIER-INDUCED DEGRADATION, Microelectronics and reliability, 37(7), 1997, pp. 1021-1028
MEASUREMENT OF HYBRID-PI EQUIVALENT-CIRCUIT PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS IN UNDERGRADUATE LABORATORIES
Authors: PHANG CH YEOW YT BARHAM RA ALLEN PJ
Citation: Ch. Phang et al., MEASUREMENT OF HYBRID-PI EQUIVALENT-CIRCUIT PARAMETERS OF BIPOLAR JUNCTION TRANSISTORS IN UNDERGRADUATE LABORATORIES, IEEE transactions on education, 40(3), 1997, pp. 213-218
MEASUREMENT OF PLASMA ETCH DAMAGE BY A NEW SLOW TRAP PROFILING TECHNIQUE
Authors: TANNER P DIMITRIJEV S YEOW YT HARRISON HB
Citation: P. Tanner et al., MEASUREMENT OF PLASMA ETCH DAMAGE BY A NEW SLOW TRAP PROFILING TECHNIQUE, IEEE electron device letters, 17(11), 1996, pp. 515-517
EFFECTS OF NITRIC-OXIDE ANNEALING OF THERMALLY GROWN SILICON DIOXIDE CHARACTERISTICS
Authors: YAO ZQ HARRISON HB DIMITRIJEV S YEOW YT
Citation: Zq. Yao et al., EFFECTS OF NITRIC-OXIDE ANNEALING OF THERMALLY GROWN SILICON DIOXIDE CHARACTERISTICS, IEEE electron device letters, 16(8), 1995, pp. 345-347
STUDY OF HOT-CARRIER DEGRADATION IN SUBMICROMETER LDD-NMOSFETS FROM 1F NOISE AND CHARGE-PUMPING CURRENT MEASUREMENTS AT DIFFERENT TEMPERATURE ANNEALS/
Authors: ANG DS LING CH YEOW YT
Citation: Ds. Ang et al., STUDY OF HOT-CARRIER DEGRADATION IN SUBMICROMETER LDD-NMOSFETS FROM 1F NOISE AND CHARGE-PUMPING CURRENT MEASUREMENTS AT DIFFERENT TEMPERATURE ANNEALS/, Microelectronic engineering, 28(1-4), 1995, pp. 257-260
OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR (VOL 30, PG2077, 1994)
Authors: LING CH AH LK YEOW YT
Citation: Ch. Ling et al., OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR (VOL 30, PG2077, 1994), Electronics Letters, 31(2), 1995, pp. 144-144
THE ELECTRICAL-PROPERTIES OF SUB-5-NM OXYNITRIDE DIELECTRICS PREPAREDIN A NITRIC-OXIDE AMBIENT USING RAPID THERMAL-PROCESSING
Authors: YAO ZQ HARRISON HB DIMITRIJEV S YEOW YT
Citation: Zq. Yao et al., THE ELECTRICAL-PROPERTIES OF SUB-5-NM OXYNITRIDE DIELECTRICS PREPAREDIN A NITRIC-OXIDE AMBIENT USING RAPID THERMAL-PROCESSING, IEEE electron device letters, 15(12), 1994, pp. 516-518
ARRIVING AT A UNIFIED MODEL FOR HOT-CARRIER DEGRADATION IN MOSFETS THROUGH GATE-TO-DRAIN CAPACITANCE MEASUREMENT
Authors: GHODSI R YEOW YT LING CH ALAM MK
Citation: R. Ghodsi et al., ARRIVING AT A UNIFIED MODEL FOR HOT-CARRIER DEGRADATION IN MOSFETS THROUGH GATE-TO-DRAIN CAPACITANCE MEASUREMENT, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2423-2429
OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR
Authors: LING CH AH LK YEOW YT
Citation: Ch. Ling et al., OBSERVATION OF CURRENT SPIKES IN THIN OXIDE MOS CAPACITOR, Electronics Letters, 30(24), 1994, pp. 2077-2079
ASSESSMENT OF HOT-HOLE-INDUCED INTERFACE STATES AND TRAPPED CARRIERS IN SUBMICRON-N (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS) BYGATE-TO-DRAIN CAPACITANCE MEASUREMENT
Authors: GHODSI R YEOW YT ALAM MK
Citation: R. Ghodsi et al., ASSESSMENT OF HOT-HOLE-INDUCED INTERFACE STATES AND TRAPPED CARRIERS IN SUBMICRON-N (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS) BYGATE-TO-DRAIN CAPACITANCE MEASUREMENT, Applied physics letters, 65(9), 1994, pp. 1139-1141
HIGH-QUALITY ULTRATHIN DIELECTRIC FILMS GROWN ON SILICON IN A NITRIC-OXIDE AMBIENT
Authors: YAO ZQ HARRISON HB DIMITRIJEV S SWEATMAN D YEOW YT
Citation: Zq. Yao et al., HIGH-QUALITY ULTRATHIN DIELECTRIC FILMS GROWN ON SILICON IN A NITRIC-OXIDE AMBIENT, Applied physics letters, 64(26), 1994, pp. 3584-3586
LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATECAPACITANCE
Authors: LING CH YEOW YT AH LK YUNG WH CHOI WK
Citation: Ch. Ling et al., LOGARITHMIC TIME-DEPENDENCE OF PMOSFET DEGRADATION OBSERVED FROM GATECAPACITANCE, Electronics Letters, 29(4), 1993, pp. 418-420
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