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Results:
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Results: 20
Authors:
Smith, SC
DeMara, RF
Yuan, JS
Hagedorn, M
Ferguson, D
Citation: Sc. Smith et al., Delay-insensitive gate-level pipelining, INTEGRATION, 30(2), 2001, pp. 103-131
Authors:
Zhang, J
Yuan, JS
Ma, Y
Chen, Y
Oates, AS
Citation: J. Zhang et al., Experimental evaluation of device degradation subject to oxide soft breakdown, SOL ST ELEC, 45(9), 2001, pp. 1521-1524
Authors:
Zhang, JL
Yuan, JS
Ma, Y
Oates, AS
Citation: Jl. Zhang et al., Modeling of direct tunneling and surface roughness effects on C-V characteristics of ultra-thin gate MOS capacitors, SOL ST ELEC, 45(2), 2001, pp. 373-377
Authors:
Wu, W
Yuan, JS
Citation: W. Wu et Js. Yuan, Copper electromigration modeling including barrier layer effect, SOL ST ELEC, 45(12), 2001, pp. 2011-2016
Authors:
Wu, W
Yuan, JS
Kang, SH
Oates, AS
Citation: W. Wu et al., Electromigration subjected to Joule heating under pulsed DC stress, SOL ST ELEC, 45(12), 2001, pp. 2051-2056
Authors:
Wu, W
Kang, SH
Yuan, JS
Oates, AS
Citation: W. Wu et al., Thermal effect on electromigration performance for Al/SiO2, Cu/SiO2 and Cu/low-K interconnect systems, SOL ST ELEC, 45(1), 2001, pp. 59-62
Authors:
Li, Q
Zhang, JL
Li, W
Yuan, JS
Chen, Y
Oates, AS
Citation: Q. Li et al., RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology, IEEE MICR T, 49(9), 2001, pp. 1546-1551
Authors:
Yang, HN
Yuan, JS
Zong, W
Citation: Hn. Yang et al., Determination of three-layer earth model from Wenner four-probe test data, IEEE MAGNET, 37(5), 2001, pp. 3684-3687
Authors:
Xie, YQ
Yuan, JS
Ma, XS
Guan, X
Citation: Yq. Xie et al., Calculation of EEG problems with anisotropic conducting media by the finite volume method, IEEE MAGNET, 37(5), 2001, pp. 3749-3752
Authors:
Duan, XD
Yuan, JS
Citation: Xd. Duan et Js. Yuan, Modeling gate oxide breakdown under bipolar stress, SOL ST ELEC, 44(9), 2000, pp. 1537-1541
Authors:
Duan, XD
Yuan, JS
Citation: Xd. Duan et Js. Yuan, Conduction-band deformation effect on stress-induced leakage current, SOL ST ELEC, 44(9), 2000, pp. 1703-1706
Authors:
Zhang, J
Yuan, JS
Ma, Y
Oates, AS
Citation: J. Zhang et al., Design optimization of stacked layer dielectrics for minimum gate leakage currents, SOL ST ELEC, 44(12), 2000, pp. 2165-2170
Authors:
Li, W
Yuan, JS
Chetlur, S
Zhou, J
Oates, AS
Citation: W. Li et al., An improved substrate current model for deep submicron MOSFETs, SOL ST ELEC, 44(11), 2000, pp. 1985-1988
Authors:
Zhang, J
Yuan, JS
Ma, Y
Citation: J. Zhang et al., Modeling short channel effect on high-k and stacked-gate MOSFETs, SOL ST ELEC, 44(11), 2000, pp. 2089-2091
Authors:
Duan, X
Luo, W
Wu, W
Yuan, JS
Citation: X. Duan et al., Dielectric response of ferroelectric relaxors, SOL ST COMM, 114(11), 2000, pp. 597-600
Authors:
Yuan, JS
Yang, HN
Zhang, LP
Cui, X
Ma, XS
Citation: Js. Yuan et al., Simulation of substation grounding grids with unequal-potential, IEEE MAGNET, 36(4), 2000, pp. 1468-1471
Authors:
Zhang, LP
Yuan, JS
Li, ZX
Citation: Lp. Zhang et al., The complex image method and its application in numerical simulation of substation grounding grids, COMMUN NUM, 15(11), 1999, pp. 835-839
Authors:
Song, J
Yuan, JS
Citation: J. Song et Js. Yuan, Modeling the base-collector heterojunction barrier effect at high current densities of SiGe HBTs, SOL ST ELEC, 43(2), 1999, pp. 457-461
Authors:
Song, J
Yuan, JS
Citation: J. Song et Js. Yuan, Graded base profiles on the performance of AlGaAs HBTs, INT J ELECT, 86(6), 1999, pp. 699-705
Authors:
Awadallah, R
Yuan, JS
Citation: R. Awadallah et Js. Yuan, A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect, INT J ELECT, 86(6), 1999, pp. 707-712
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