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Results: 1-25/66
Authors:
JIANG RL
LIU WP
JIANG N
ZHU SM
SHEN B
CHEN ZZ
ZHENG YD
Citation: Rl. Jiang et al., OPTIMUM ANNEALING CONDITIONS FOR BORON-IMPLANTED SIGE EPILAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2786-2788
Authors:
ZHENG YD
DAVIS GA
WANG C
DARBY BJ
HUA YG
Citation: Yd. Zheng et al., MAJOR THRUST SHEET IN THE DAQING-SHAN MOUNTAINS, INNER-MONGOLIA, CHINA, SCIENCE IN CHINA SERIES D-EARTH SCIENCES, 41(5), 1998, pp. 553
Authors:
ZHANG JJ
LIU SW
ZHENG YD
CHEN J
SHI QZ
YU XD
XUE LW
Citation: Jj. Zhang et al., RAMAN SPECTRAL-ANALYSIS AND GENETIC MECHANISM OF PSEUDOTACHYLYTE IN XIAOQINLING DETACHMENT FAULT, SCIENCE IN CHINA SERIES D-EARTH SCIENCES, 41(3), 1998, pp. 242-247
Authors:
XUE LW
SHI QZ
YU XD
ZHENG YD
ZHANG JJ
Citation: Lw. Xue et al., MECHANISM OF INVERSION METALLOGENY OF QUARTZ VEIN TYPE GOLD DEPOSITS IN THE XIAOQINLING REGION, Chinese Science Bulletin, 43(10), 1998, pp. 848-850
STUDY OF TRANSIENT PHOTOCONDUCTIVITY OF GAN EPILAYER GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors:
CHEN ZZ
SHEN B
ZHANG XY
ZHANG R
CHEN P
ZHOU YG
ZANG L
JIANG RL
HUANG ZC
ZHENG YD
WU ZS
SUN XT
CHEN F
Citation: Zz. Chen et al., STUDY OF TRANSIENT PHOTOCONDUCTIVITY OF GAN EPILAYER GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics A: Materials science & processing, 67(5), 1998, pp. 567-570
Authors:
LIU JL
LU Y
SHI Y
GU SL
JIANG RL
WANG F
ZHENG YD
Citation: Jl. Liu et al., FABRICATION OF SILICON NANOWIRES, Applied physics A: Materials science & processing, 66(5), 1998, pp. 539-541
Authors:
WU ZS
SUN XT
ZHENG YD
CHEN ZZ
SHEN B
Citation: Zs. Wu et al., PHOTOCONDUCTIVITY DECAY UNDER ILLUMINATION OF A PULSED-LASER WITH UNFOCUSED OR FOCUSED BEAM, Chinese Physics Letters, 15(6), 1998, pp. 447-449
Authors:
DAVIS GA
CONG W
ZHENG YD
ZHANG JJ
ZHANG CH
GEHRELS GE
Citation: Ga. Davis et al., THE ENIGMATIC YINSHAN FOLD-AND-THRUST BELT OF NORTHERN CHINA - NEW VIEWS ON ITS INTRAPLATE CONTRACTIONAL STYLES, Geology, 26(1), 1998, pp. 43-46
Authors:
HE L
SHI ZQ
JIANG N
HAN P
ZHENG YD
Citation: L. He et al., SURFACE-MORPHOLOGY STUDY AND ELECTRICAL-PROPERTIES OF SI1-XCX ON SI GROWN BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 318(1-2), 1998, pp. 15-17
Authors:
LIU JL
LU Y
SHI Y
GU SL
JIANG RL
WANG F
BU HM
ZHENG YD
Citation: Jl. Liu et al., STUDY ON THERMAL-OXIDATION OF SI NANOWIRES, Physica status solidi. a, Applied research, 168(2), 1998, pp. 441-446
Authors:
HU ZB
CHEN YY
WANG CJ
ZHENG YD
LI Y
Citation: Zb. Hu et al., POLYMER GELS WITH ENGINEERED ENVIRONMENTALLY RESPONSIVE SURFACE PATTERNS, Nature, 393(6681), 1998, pp. 149-152
Authors:
GU SL
WANG RH
JIANG N
ZHU SM
ZHANG R
SHI Y
HU LQ
ZHENG YD
Citation: Sl. Gu et al., STUDY OF GESI ALLOY DEPOSITION ON GE SUBSTRATE BY VERY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 183(1-2), 1998, pp. 117-123
Authors:
JIANG RL
GU SL
JIANG N
LI Z
XU J
ZHU SM
HU LQ
ZHENG YD
Citation: Rl. Jiang et al., SIGE GE HETEROJUNCTION INFRARED DETECTOR, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 968-970
Authors:
YANG K
SHEN B
ZHANG R
ZHOU YG
CHEN ZZ
CHEN P
ZHENG YD
HUANG ZC
Citation: K. Yang et al., OPTICAL STUDY OF BAND-EDGE BLUE-SHIFT IN ALGAN GAN DOUBLE-QUANTUM WELLS/, Chinese Physics Letters, 14(9), 1997, pp. 708-711
Authors:
SHEN B
YANG K
CHEN PG
ZHANG RG
SHI Y
ZHENG YD
SEKIGUCHI T
SUMINO K
Citation: B. Shen et al., ELECTRICAL-ACTIVITY OF FRANK PARTIAL DISLOCATIONS AND THE INFLUENCE OF METALLIC IMPURITIES IN CZOCHRALSKI-GROWN SILICON, Chinese Physics Letters, 14(6), 1997, pp. 436-439
Authors:
JIANG RL
JIANG N
GU SL
LI Z
XU J
ZHU SM
HU LQ
ZHENG YD
Citation: Rl. Jiang et al., PHOTOELECTRIC PROPERTIES OF SI-SI1-XGEX-GE HETEROSTRUCTURES FOR INFRARED DETECTOR, Chinese Physics Letters, 14(11), 1997, pp. 876-878
Authors:
ZHENG YD
LI JB
HUANG JL
Citation: Yd. Zheng et al., THE FORMATION AND CHARACTERIZATION OF LYO TROPIC LIQUID-CRYSTAL PHASEOF POLYANILINE DOPED WITH DODECYLBENZENE SULFONIC-ACID, Gaodeng xuexiao huaxue xuebao, 18(5), 1997, pp. 823-825
Authors:
ZHENG YD
LI JB
HUANG JL
Citation: Yd. Zheng et al., THE REACTION PROCESS AND STRUCTURE OF POL YANILINE THERMAL DOPED WITHDODECYLBENZENESULFONATE, Gaodeng xuexiao huaxue xuebao, 18(3), 1997, pp. 495-497
Authors:
GU SL
ZHU XM
JIANG N
SHI Y
ZHANG R
ZHENG YD
Citation: Sl. Gu et al., SIH4 AND GEH4 CHEMICAL-VAPOR-DEPOSITION OF GESI GE HETEROSTRUCTURES/, Applied surface science, 115(1), 1997, pp. 28-30
Authors:
GU SL
ZHENG YD
ZHANG R
ZHU SM
Citation: Sl. Gu et al., COMPRESSIVE AND TENSILE STRAIN EFFECTS ON ATOMIC DISTRIBUTION IN STRAINED SI-GE ALLOYS, Physica status solidi. a, Applied research, 160(1), 1997, pp. 3-10
Authors:
WANG F
SHI Y
LIU JL
LU Y
GU SL
ZHENG YD
Citation: F. Wang et al., HIGHLY SELECTIVE CHEMICAL ETCHING OF SI VS SI1-XGEX USING NH4OH SOLUTION, Journal of the Electrochemical Society, 144(3), 1997, pp. 37-39
Authors:
SHEN B
ZHANG XY
YANG K
CHEN P
ZHANG R
SHI Y
ZHENG YD
SEKIGUCHI T
SUMINO K
Citation: B. Shen et al., GETTERING OF FE IMPURITIES BY BULK STACKING-FAULTS IN CZOCHRALSKI-GROWN SILICON, Applied physics letters, 70(14), 1997, pp. 1876-1878
Authors:
SHEN B
SEKIGUCHI T
ZHANG R
SHI Y
SHI HT
YANG K
ZHENG YD
SUMINO K
Citation: B. Shen et al., PRECIPITATION OF CN AND FE IN DISLOCATED FLOATING-ZONE-GROWN SILICON, JPN J A P 1, 35(6A), 1996, pp. 3301-3305
Authors:
GU SL
ZHENG YD
ZHANG R
HAN P
ZHU SM
Citation: Sl. Gu et al., STRESS PROPERTY OF SIGE ALLOY DEPOSITED BY VERY-LOW PRESSURE CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 35(6A), 1996, pp. 3327-3330
Authors:
HUANG XD
HAN P
CHEN H
ZHENG YD
HU LQ
WANG RH
ZHU SM
FENG D
Citation: Xd. Huang et al., HIGH PHOSPHORUS DOPING OF EPITAXIAL SILICON AT LOW-TEMPERATURE AND VERY-LOW PRESSURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2690-2692