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Results: 1-25 | 26-29
Results: 1-25/29
Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: 1. Ar/N-2/C2H2 plasma
Authors: Dinescu, G de Graaf, A Aldea, E van de Sanden, MCM
Citation: G. Dinescu et al., Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: 1. Ar/N-2/C2H2 plasma, PLASMA SOUR, 10(3), 2001, pp. 513-523
Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: II. Ar/N-2 plasma with graphite nozzle
Authors: de Graaf, A Aldea, E Dinescu, G van de Sanden, MCM
Citation: A. De Graaf et al., Investigation of processes in low-pressure expanding thermal plasmas used for carbon nitride deposition: II. Ar/N-2 plasma with graphite nozzle, PLASMA SOUR, 10(3), 2001, pp. 524-529
Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth
Authors: Kessels, WMM Boogaarts, MGH Hoefnagels, JPM Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth, J VAC SCI A, 19(3), 2001, pp. 1027-1029
Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry
Authors: Kessels, WMM Leroux, A Boogaarts, MGH Hoefnagels, JPM van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Cavity ring down detection of SiH3 in a remote SiH4 plasma and comparison with model calculations and mass spectrometry, J VAC SCI A, 19(2), 2001, pp. 467-476
An expanding thermal plasma for deposition of surface textured ZnO : Al with focus on thin film solar cell applications
Authors: Groenen, R Linden, JL van Lierop, HRM Schram, DC Kuypers, AD van de Sanden, MCM
Citation: R. Groenen et al., An expanding thermal plasma for deposition of surface textured ZnO : Al with focus on thin film solar cell applications, APPL SURF S, 173(1-2), 2001, pp. 40-43
Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD
Authors: Groenen, R Loffler, J Sommeling, PM Linden, JL Hamers, EAG Schropp, REI van de Sanden, MCM
Citation: R. Groenen et al., Surface textured ZnO films for thin film solar cell applications by expanding thermal plasma CVD, THIN SOL FI, 392(2), 2001, pp. 226-230
Amorphous silicon solar cells on natively textured ZnO grown by PECVD
Authors: Loffler, J Groenen, R Linden, JL van de Sanden, MCM Schropp, REI
Citation: J. Loffler et al., Amorphous silicon solar cells on natively textured ZnO grown by PECVD, THIN SOL FI, 392(2), 2001, pp. 315-319
On the growth mechanism of a-Si : H
Authors: Kessels, WMM Smets, AHM Marra, DC Aydil, ES Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., On the growth mechanism of a-Si : H, THIN SOL FI, 383(1-2), 2001, pp. 154-160
Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H-2-SiH4 plasma
Authors: Kessels, WMM Hoefnagels, JPM Boogaarts, MGH Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., Cavity ring down study of the densities and kinetics of Si and SiH in a remote Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2065-2073
Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma
Authors: Kessels, WMM Severens, RJ Smets, AHM Korevaar, BA Adriaenssens, GJ Schram, DC van de Sanden, MCM
Citation: Wmm. Kessels et al., Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar-H-2-SiH4 plasma, J APPL PHYS, 89(4), 2001, pp. 2404-2413
The physics of plasma expansion
Authors: Schram, DC Mazouffre, S Engeln, R van de Sanden, MCM
Citation: Dc. Schram et al., The physics of plasma expansion, ATOMIC AND MOLECULAR BEAMS: THE STATE OF THE ART 2000, 2001, pp. 209-235
Use of in situ FTIR spectroscopy and mass spectrometry in an expanding hydrocarbon plasma
Authors: van Hest, MFAM de Graaf, A van de Sanden, MCM Schram, DC
Citation: Mfam. Van Hest et al., Use of in situ FTIR spectroscopy and mass spectrometry in an expanding hydrocarbon plasma, PLASMA SOUR, 9(4), 2000, pp. 615-624
X-ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon-nitrogen films
Authors: Dementjev, AP de Graaf, A van de Sanden, MCM Maslakov, KI Naumkin, AV Serov, AA
Citation: Ap. Dementjev et al., X-ray photoelectron spectroscopy reference data for identification of the C3N4 phase in carbon-nitrogen films, DIAM RELAT, 9(11), 2000, pp. 1904-1907
Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon
Authors: Kessels, WMM van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Film growth precursors in a remote SiH4 plasma used for high-rate deposition of hydrogenated amorphous silicon, J VAC SCI A, 18(5), 2000, pp. 2153-2163
Challenges in amorphous silicon solar cell technology
Authors: van Swaaij, RACMM Zeman, M Korevaar, BA Smit, C Metselaar, JW van de Sanden, MCM
Citation: Racmm. Van Swaaij et al., Challenges in amorphous silicon solar cell technology, ACT PHYS SL, 50(5), 2000, pp. 559-570
High hole drift mobility in a-Si : H deposited at high growth rates for solar cell application
Authors: Korevaar, BA Adriaenssens, GJ Smets, AHM Kessels, WMM Song, HZ van de Sanden, MCM Schram, DC
Citation: Ba. Korevaar et al., High hole drift mobility in a-Si : H deposited at high growth rates for solar cell application, J NON-CRYST, 266, 2000, pp. 380-384
In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma
Authors: Smets, AHM Schram, DC van de Sanden, MCM
Citation: Ahm. Smets et al., In situ single wavelength ellipsometry studies of high rate hydrogenated amorphous silicon growth using a remote expanding thermal plasma, J APPL PHYS, 88(11), 2000, pp. 6388-6394
Modeling of the formation of cationic silicon clusters in a remote Ar/H-2/SiH4 plasma
Authors: Leroux, A Kessels, WMM Schram, DC van de Sanden, MCM
Citation: A. Leroux et al., Modeling of the formation of cationic silicon clusters in a remote Ar/H-2/SiH4 plasma, J APPL PHYS, 88(1), 2000, pp. 537-543
Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma
Authors: Kessels, WMM van de Sanden, MCM Severens, RJ Schram, DC
Citation: Wmm. Kessels et al., Surface reaction probability during fast deposition of hydrogenated amorphous silicon with a remote silane plasma, J APPL PHYS, 87(7), 2000, pp. 3313-3320
Cavity ring down detection of SiH3 on the broadband (A)over-tilde (2)A '(1) <- (X)over-tilde (2)A(1) transition in a remote Ar-H-2-SiH4 plasma
Authors: Boogaarts, MGH Bocker, PJ Kessels, WMM Schram, DC van de Sanden, MCM
Citation: Mgh. Boogaarts et al., Cavity ring down detection of SiH3 on the broadband (A)over-tilde (2)A '(1) <- (X)over-tilde (2)A(1) transition in a remote Ar-H-2-SiH4 plasma, CHEM P LETT, 326(5-6), 2000, pp. 400-406
Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C : H
Authors: van de Sanden, MCM van Hest, MFAM de Graaf, A Smets, AHM Letourneur, KGY Boogaarts, MGH Schram, DC
Citation: Mcm. Van De Sanden et al., Plasma chemistry of an expanding Ar/C2H2 plasma used for fast deposition of a-C : H, DIAM RELAT, 8(2-5), 1999, pp. 677-681
Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon
Authors: van de Sanden, MCM Kessels, WMM Severens, RJ Schram, DC
Citation: Mcm. Van De Sanden et al., Plasma and surface chemistry effects during high rate deposition of hydrogenated amorphous silicon, PLASMA PHYS, 41, 1999, pp. A365-A378
Formation of large positive silicon-cluster ions in a remote silane plasma
Authors: Kessels, WMM Leewis, CM Leroux, A van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Formation of large positive silicon-cluster ions in a remote silane plasma, J VAC SCI A, 17(4), 1999, pp. 1531-1535
Formation of cationic silicon clusters in a remote silane plasma and theircontribution to hydrogenated amorphous silicon film growth
Authors: Kessels, WMM Leewis, CM van de Sanden, MCM Schram, DC
Citation: Wmm. Kessels et al., Formation of cationic silicon clusters in a remote silane plasma and theircontribution to hydrogenated amorphous silicon film growth, J APPL PHYS, 86(7), 1999, pp. 4029-4039
Plasma chemistry aspects of a-Si : H deposition using an expanding thermalplasma (vol 84, pg 2426, 1998)
Authors: van de Sanden, MCM Severens, RJ Kessels, WMM Meulenbroeks, RFG Schram, DC
Citation: Mcm. Van De Sanden et al., Plasma chemistry aspects of a-Si : H deposition using an expanding thermalplasma (vol 84, pg 2426, 1998), J APPL PHYS, 85(2), 1999, pp. 1243-1243
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