AAAAAA
Results: 26-50/1514
Authors:
KAGAWA T
KOIDE Y
OKU T
MORI H
TERAGUCHI N
TOMOMURA Y
SUZUKI A
MURAKAMI M
Citation: T. Kagawa et al., EFFECTS OF INTERMEDIATE SEMICONDUCTOR LAYERS ON CARRIER TRANSPORT MECHANISMS THROUGH P-ZNSE METALS INTERFACES/, Journal of electronic materials, 27(8), 1998, pp. 998-1002
Authors:
MISHURNYI VA
DEANDA F
GORBATCHEV AY
DELCASTILLO ICH
NIETONAVARRO J
Citation: Va. Mishurnyi et al., A NEW LPE GROWTH METHOD OF SEMICONDUCTOR HETEROSTRUCTURES WITH THICKNESS PROFILE VARIATION OF EPITAXIAL LAYERS, Journal of electronic materials, 27(8), 1998, pp. 1003-1004
Citation: 1998 ELECTRONIC MATERIALS CONFERENCE - TECHNICAL PROGRAM - UNIVERSITY-OF-VIRGINIA - CHARLOTTESVILLE, VIRGINIA - JUNE 24-26, 1998 - ABSTRACTS, Journal of electronic materials, 27(7), 1998, pp. 1-75
Authors:
CHENG WH
CHEN CH
WANG SC
TU YK
HSIEH KC
Citation: Wh. Cheng et al., DEFECTS IN OPTOELECTRONIC MATERIALS DUE TO PHOSPHORUS-CONTAINING UNDERLAYER, Journal of electronic materials, 27(7), 1998, pp. 47-50
Authors:
XU D
ENOKI T
SUEMITSU T
UMEDA Y
YOKOYAMA H
ISHII Y
Citation: D. Xu et al., ELECTROCHEMICALLY INDUCED ASYMMETRICAL ETCHING IN INALAS INGAAS HETEROSTRUCTURES FOR MODFET GATE-GROOVE FABRICATION/, Journal of electronic materials, 27(7), 1998, pp. 51-53
Authors:
WARD A
HENDRICKS RW
Citation: A. Ward et Rw. Hendricks, PROCESS-INDUCED STRESS AND MICROCRACK NUCLEATION IN GAAS WAFERS, Journal of electronic materials, 27(7), 1998, pp. 821-825
Authors:
WARD A
HENDRICKS RW
Citation: A. Ward et Rw. Hendricks, SYMPTOMS OF STRESS-INDUCED GAIN DEGRADATION IN POWER MESFETS, Journal of electronic materials, 27(7), 1998, pp. 826-828
Authors:
LEE HJ
YU SJ
ASAHI H
GONDA S
KIM YH
RHEE JK
NOH SJ
Citation: Hj. Lee et al., VERY-LOW RESISTANCE OHMIC CONTACTS TO N-GAN, Journal of electronic materials, 27(7), 1998, pp. 829-832
Authors:
NORDELL N
SCHONER A
ROTTNER K
PERSSON POA
WAHAB Q
HULTMAN L
LINNARSSON MK
OLSSON E
Citation: N. Nordell et al., BORON IMPLANTATION AND EPITAXIAL REGROWTH STUDIES OF 6H SIC, Journal of electronic materials, 27(7), 1998, pp. 833-837
Authors:
LIN H
ZVANUT ME
Citation: H. Lin et Me. Zvanut, NEAR-INTERFACE TRAPPED CHARGE-INDUCED BY FOWLER-NORDHEIM INJECTION INHYDROGEN OR ARGON ANNEALED MOS CAPACITORS, Journal of electronic materials, 27(7), 1998, pp. 838-841
Authors:
JAIN TA
KAO CR
Citation: Ta. Jain et Cr. Kao, PHASE-EQUILIBRIA OF THE SI-GE-TI SYSTEM RELEVANT TO THE REACTIONS BETWEEN SIGE ALLOYS AND TI, Journal of electronic materials, 27(7), 1998, pp. 842-847
Authors:
FURTHMULLER J
KACKELL P
BECHSTEDT F
FISSEL A
PFENNIGHAUS K
SCHROTER B
RICHTER W
Citation: J. Furthmuller et al., MODEL OF THE EPITAXIAL-GROWTH OF SIC-POLYTYPES UNDER SURFACE-STABILIZED CONDITIONS, Journal of electronic materials, 27(7), 1998, pp. 848-852
Authors:
KUSCHKE WM
CARSTANJEN HD
PAZARKAS N
PLACHKE DW
ARZT E
Citation: Wm. Kuschke et al., INFLUENCE OF WATER-ABSORPTION BY SILICATE GLASS ON THE STRAINS IN PASSIVATED AL CONDUCTOR LINES, Journal of electronic materials, 27(7), 1998, pp. 853-857
Authors:
SENGUPTA DK
WEISMAN MB
FENG M
CHUANG SL
CHANG YC
COOPER L
ADESIDA I
BLOOM I
HSIEH KC
FANG W
MALIN JI
CURTIS AP
HORTON T
STILLMAN GE
GUNAPALA SD
BANDARA SV
POOL F
LIU JK
MCKELVEY M
LUONG E
HONG W
MUMOLO J
LIU HC
WANG WI
Citation: Dk. Sengupta et al., GROWTH AND CHARACTERIZATION OF N-TYPE GAAS ALGAAS QUANTUM-WELL INFRARED PHOTODETECTOR ON GAAS-ON-SI SUBSTRATE/, Journal of electronic materials, 27(7), 1998, pp. 858-865
Authors:
KARIYA Y
OTSUKA M
Citation: Y. Kariya et M. Otsuka, EFFECT OF BISMUTH ON THE ISOTHERMAL FATIGUE PROPERTIES OF SN-3.5MASS-PERCENT-AG SOLDER ALLOY, Journal of electronic materials, 27(7), 1998, pp. 866-870
Authors:
YAKIMOVA R
HEMMINGSSON C
MACMILLAN MF
YAKIMOV T
JANZEN E
Citation: R. Yakimova et al., BARRIER HEIGHT DETERMINATION FOR N-TYPE 4H-SIC SCHOTTKY CONTACTS MADEUSING VARIOUS METALS, Journal of electronic materials, 27(7), 1998, pp. 871-875
STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF ZINC-OXIDE PRODUCED BY OXIDATION OF ZINC THIN-FILMS
Authors:
KASHANI H
Citation: H. Kashani, STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF ZINC-OXIDE PRODUCED BY OXIDATION OF ZINC THIN-FILMS, Journal of electronic materials, 27(7), 1998, pp. 876-882
Authors:
CHAUVET M
SALAMO GJ
BLISS DF
BRYANT G
Citation: M. Chauvet et al., EVALUATION OF INP-FE PARAMETERS BY MEASUREMENT OF 2 WAVE MIXING PHOTOREFRACTIVE AND ABSORPTIVE GAIN, Journal of electronic materials, 27(7), 1998, pp. 883-890
Authors:
GE YR
WIEDEMEIER H
Citation: Yr. Ge et H. Wiedemeier, TRANSIENT-BEHAVIOR OF HG1-XCDXTE FILM GROWTH ON 3-DEGREES OFF-(100) CDTE SUBSTRATES BY CHEMICAL-VAPOR TRANSPORT, Journal of electronic materials, 27(7), 1998, pp. 891-899
Authors:
SIEG RM
RINGEL SA
TING SM
FITZGERALD EA
SACKS RN
Citation: Rm. Sieg et al., ANTIPHASE DOMAIN-FREE GROWTH OF GAAS ON OFFCUT (001)GE WAFERS BY MOLECULAR-BEAM EPITAXY WITH SUPPRESSED GE OUTDIFFUSION, Journal of electronic materials, 27(7), 1998, pp. 900-907
Authors:
KIM HS
WILLIAMS CK
REISMAN A
Citation: Hs. Kim et al., LOW-FIELD BULK DEFECT GENERATION DURING UNIFORM CARRIER INJECTION INTO THE GATE INSULATOR OF INSULATED GATE FIELD-EFFECT TRANSISTORS AT VARIOUS TEMPERATURES, Journal of electronic materials, 27(7), 1998, pp. 908-914
Authors:
CHO HU
HONG J
MAEDA T
DONOVAN SM
ABERNATHY CR
PEARTON SJ
SHUL RJ
HAN J
Citation: Hu. Cho et al., HIGH SELECTIVITY PLASMA-ETCHING OF INN OVER GAN, Journal of electronic materials, 27(7), 1998, pp. 915-917
Authors:
CHOWDHURY EA
DASHIELL M
QIU G
OLOWOLAFE JO
JONCZYK R
SMITH D
BARNETT A
KOLODZEY J
UNRUH KM
SWANN CP
SUEHLE J
CHEN YA
Citation: Ea. Chowdhury et al., STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF OXIDIZED ALN THIN-FILMS AT DIFFERENT TEMPERATURES, Journal of electronic materials, 27(7), 1998, pp. 918-922
Authors:
JOHNSON B
AMSTER R
VANASUPA L
Citation: B. Johnson et al., GRAIN NUCLEATION AND TEXTURE ANALYSIS OF ELECTROLESS COPPER DEPOSITION ON A PALLADIUM SEED LAYER, Journal of electronic materials, 27(7), 1998, pp. 923-927
Authors:
COLLINS CE
MILES RE
POLLARD RD
STEENSON DP
DIGBY JW
PARKHURST GM
CHAMBERLAIN JM
CRONIN NJ
DAVIES SR
BOWEN JW
Citation: Ce. Collins et al., MILLIMETER-WAVE MEASUREMENTS OF THE COMPLEX DIELECTRIC-CONSTANT OF ANADVANCED THICK-FILM UV PHOTORESIST, Journal of electronic materials, 27(6), 1998, pp. 40-42