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Results: 101-125/1514
Authors:
IRVINE SJC
AHMED MU
PRETE P
Citation: Sjc. Irvine et al., THE KINETICS OF THE GROWTH OF NITROGEN-DOPED ZNSE GROWN BY PHOTO-ASSISTED MOVPE, Journal of electronic materials, 27(6), 1998, pp. 763-768
Authors:
BEVAN MJ
SHIH HD
DODGE JA
SYLLAIOS AJ
WEIRAUCH DF
Citation: Mj. Bevan et al., PREPARATION OF ZNSE LIGHT-EMITTING-DIODES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING TRISDIMETHYLAMINOARSINE AS A P-TYPE DOPING SOURCE, Journal of electronic materials, 27(6), 1998, pp. 769-771
Authors:
KOIDE Y
KAWAKAMI T
MURAKAMI M
TERAGUCHI N
TOMOMURA Y
SUZUKI A
Citation: Y. Koide et al., SCHOTTKY-BARRIER HEIGHTS OF CONTACT METALS TO P-TYPE ZNSE, Journal of electronic materials, 27(6), 1998, pp. 772-775
Authors:
SPORKEN R
ABUELRUB KM
CHEN YP
SIVANANTHAN S
Citation: R. Sporken et al., ZNSE ZNSXSE1-X HETEROJUNCTION VALENCE-BAND DISCONTINUITY MEASURED BY X-RAY PHOTOELECTRON-SPECTROSCOPY/, Journal of electronic materials, 27(6), 1998, pp. 776-781
Authors:
VERIE C
Citation: C. Verie, COVALENCY ENGINEERING THROUGH ALLOYING WITH BERYLLIUM CHALCOGENIDES IN WIDE BAND-GAP II-VI CRYSTALS, Journal of electronic materials, 27(6), 1998, pp. 782-787
Authors:
JAMES RB
BRUNETT B
HEFFELFINGER J
VANSCYOC J
LUND J
DOTY FP
LINGREN CL
OLSEN R
CROSS E
HERMON H
YOON H
HILTON N
SCHIEBER M
LEE EY
TONEY J
SCHLESINGER TE
GOORSKY M
YAO W
CHEN H
BURGER A
Citation: Rb. James et al., MATERIAL PROPERTIES OF LARGE-VOLUME CADMIUM ZINC TELLURIDE CRYSTALS AND THEIR RELATIONSHIP TO NUCLEAR-DETECTOR PERFORMANCE, Journal of electronic materials, 27(6), 1998, pp. 788-799
Authors:
NEMIROVSKY Y
ASA G
JAKOBSON CG
RUZIN A
GORELIK J
Citation: Y. Nemirovsky et al., DARK NOISE CURRENTS AND ENERGY RESOLUTION OF CDZNTE SPECTROMETERS, Journal of electronic materials, 27(6), 1998, pp. 800-806
Authors:
NEMIROVSKY Y
ASA G
RUZIN A
GORELIK J
SUDHARSANAN R
Citation: Y. Nemirovsky et al., CHARACTERIZATION OF DARK NOISE IN CDZNTE SPECTROMETERS, Journal of electronic materials, 27(6), 1998, pp. 807-812
Authors:
RABLAU CI
SETZLER SD
HALLIBURTON LE
GILES NC
DOTY FP
Citation: Ci. Rablau et al., POINT-DEFECTS IN CD1-XZNXTE - A CORRELATED PHOTOLUMINESCENCE AND EPR STUDY, Journal of electronic materials, 27(6), 1998, pp. 813-819
Authors:
STUTZ CE
MACK M
BREMSER MD
NAM OH
DAVIS RF
LOOK DC
Citation: Ce. Stutz et al., PHOTOELECTROCHEMICAL CAPACITANCE-VOLTAGE MEASUREMENTS IN GAN, Journal of electronic materials, 27(5), 1998, pp. 26-28
Authors:
GERMAIN M
EVRARD R
LAMPE E
HEUKEN M
Citation: M. Germain et al., ON THE DETERMINATION OF CHARGE PROFILES IN EPITAXIAL LAYERS OF ZNSE BY CAPACITANCE MEASUREMENTS, Journal of electronic materials, 27(5), 1998, pp. 29-31
Authors:
KIM BJ
LEE JW
PARK HS
PARK Y
KIM TI
Citation: Bj. Kim et al., WET ETCHING OF (0001)GAN AL2O3 GROWN BY MOVPE, Journal of electronic materials, 27(5), 1998, pp. 32-34
Authors:
ZHANG R
KUECH TF
Citation: R. Zhang et Tf. Kuech, HYDROGEN-INDUCED YELLOW LUMINESCENCE IN GAN GROWN BY HALIDE VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(5), 1998, pp. 35-39
Authors:
LIE DYC
Citation: Dyc. Lie, DOPING AND PROCESSING EPITAXIAL GEXSI1-X FILMS ON SI(100) BY ION-IMPLANTATION FOR SI-BASED HETEROJUNCTION DEVICES APPLICATIONS, Journal of electronic materials, 27(5), 1998, pp. 377-401
Authors:
RATAKONDA D
SINGH R
VEDULA L
NARAYANAN S
Citation: D. Ratakonda et al., OHMIC CONTACTS FORMATION OF SILICON SCHOTTKY DIODES BY SCREEN PRINTING AND RAPID ISOTHERMAL PROCESSING, Journal of electronic materials, 27(5), 1998, pp. 402-404
Authors:
LEE PP
HWU RJ
SADWICK LP
BALASUBRAMANIAM H
KUMAR BR
ALVIS R
LAREAU RT
WOOD MC
Citation: Pp. Lee et al., EPITAXIAL-GROWTH AND CHARACTERIZATION OF DYP GAAS, DYAS/GAAS, AND GAAS/DYP/GAAS HETEROSTRUCTURES/, Journal of electronic materials, 27(5), 1998, pp. 405-408
Authors:
SEONG TY
YANG JJ
RYU MY
SONG JI
YU PW
Citation: Ty. Seong et al., STRUCTURAL AND OPTICAL-PROPERTIES OF GAXIN1-XP LAYERS GROWN BY CHEMICAL BEAM EPITAXY, Journal of electronic materials, 27(5), 1998, pp. 409-413
Authors:
TSATSULNIKOV AF
IVANOV SV
KOPEV PS
KRYGANOVSKII AK
LEDENTSOV NN
MAXIMOV MV
MELTSER BYA
NEKLUDOV PV
SUVOROVA AA
TITKOV AN
VOLOVIK BV
GRUNDMANN M
BIMBERG D
ALFEROV ZI
Citation: Af. Tsatsulnikov et al., FORMATION OF INSB QUANTUM DOTS IN A GASB MATRIX, Journal of electronic materials, 27(5), 1998, pp. 414-417
Authors:
MADSEN LD
WEAVER L
LJUNGCRANTZ H
CLARK AJ
Citation: Ld. Madsen et al., ANALYSIS OF THE STRESS AND INTERFACIAL REACTIONS IN PT TI/SIO2/SI FORUSE WITH FERROELECTRIC THIN-FILMS/, Journal of electronic materials, 27(5), 1998, pp. 418-426
Authors:
ROUVIMOV S
LILIENTALWEBER Z
SWIDER W
WASHBURN J
WEBER ER
SASAKI A
WAKAHARA A
FURKAWA Y
ABE T
NODA S
Citation: S. Rouvimov et al., EFFECTS OF GAAS-SPACER STRAIN ON VERTICAL ORDERING OF STACKED INAS QUANTUM DOTS IN A GAAS MATRIX, Journal of electronic materials, 27(5), 1998, pp. 427-432
Authors:
SCHULZ DL
CURTIS CJ
FLITTON RA
WIESNER H
KEANE J
MATSON RJ
JONES KM
PARILLA PA
NOUFI R
GINLEY DS
Citation: Dl. Schulz et al., CU-IN-GA-SE NANOPARTICLE COLLOIDS AS SPRAY DEPOSITION PRECURSORS FOR CU(IN,GA)SE-2 SOLAR-CELL MATERIALS, Journal of electronic materials, 27(5), 1998, pp. 433-437
Authors:
NUGRAHA,"TAMURA W
ITOH O
SUTO K
NISHIZAWA J
Citation: W. Nugraha,"tamura et al., TE VAPOR-PRESSURE DEPENDENCE OF THE PN JUNCTION PROPERTIES OF PBTE LIQUID-PHASE EPITAXIAL LAYERS, Journal of electronic materials, 27(5), 1998, pp. 438-441
Authors:
GARCIA JC
DUA C
MOHAMMADI S
PARK JW
PAVLIDIS D
Citation: Jc. Garcia et al., GROWTH-CHARACTERISTICS OF HYDRIDE-FREE CHEMICAL BEAM EPITAXY AND APPLICATION TO GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of electronic materials, 27(5), 1998, pp. 442-445
Authors:
ZHANG R
TSUI R
SHIRALAGI K
TRESEK J
Citation: R. Zhang et al., SELECTIVE-AREA EPITAXY OF GAAS USING TRI-ISOPROPYLGALLIUM, Journal of electronic materials, 27(5), 1998, pp. 446-450
Authors:
TING SM
FITZGERALD EA
SIEG RM
RINGEL SA
Citation: Sm. Ting et al., RANGE OF DEFECT MORPHOLOGIES ON GAAS GROWN ON OFFCUT (001)GE SUBSTRATES, Journal of electronic materials, 27(5), 1998, pp. 451-461