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Results: 151-175/13550
Authors:
BLOCHWITZ J
PFEIFFER M
FRITZ T
LEO K
Citation: J. Blochwitz et al., LOW-VOLTAGE ORGANIC LIGHT-EMITTING-DIODES FEATURING DOPED PHTHALOCYANINE AS HOLE TRANSPORT MATERIAL, Applied physics letters, 73(6), 1998, pp. 729-731
Authors:
TESSLER N
HARRISON NT
THOMAS DS
FRIEND RH
Citation: N. Tessler et al., CURRENT HEATING IN POLYMER LIGHT-EMITTING-DIODES, Applied physics letters, 73(6), 1998, pp. 732-734
Authors:
CABRERA B
CLARKE RM
COLLING P
MILLER AJ
NAM S
ROMANI RW
Citation: B. Cabrera et al., DETECTION OF SINGLE INFRARED, OPTICAL, AND ULTRAVIOLET PHOTONS USING SUPERCONDUCTING TRANSITION EDGE SENSORS, Applied physics letters, 73(6), 1998, pp. 735-737
Authors:
DING Y
KONDOH A
MIURA Y
NANBA T
Citation: Y. Ding et al., FREQUENCY-DOUBLING IN GALLIUM-LANTHANUM-SULFIDE GLASS WITH SURFACE CRYSTALLIZED GA6LA10 3S14 THIN-FILMS/, Applied physics letters, 73(6), 1998, pp. 738-740
Authors:
DEGERTEKIN FL
ATALAR A
KHURIYAKUB BT
Citation: Fl. Degertekin et al., MICROMACHINABLE ULTRASONIC LEAKY-WAVE AIR TRANSDUCERS, Applied physics letters, 73(6), 1998, pp. 741-743
FERROMAGNETIC CO-FE-ZR-B AMORPHOUS-ALLOYS WITH GLASS-TRANSITION AND GOOD HIGH-FREQUENCY PERMEABILITY
Authors:
INOUE A
KOSHIBA H
ITOI T
MAKINO A
Citation: A. Inoue et al., FERROMAGNETIC CO-FE-ZR-B AMORPHOUS-ALLOYS WITH GLASS-TRANSITION AND GOOD HIGH-FREQUENCY PERMEABILITY, Applied physics letters, 73(6), 1998, pp. 744-746
Authors:
MARCHAND H
WU XH
IBBETSON JP
FINI PT
KOZODOY P
KELLER S
SPECK JS
DENBAARS SP
MISHRA UK
Citation: H. Marchand et al., MICROSTRUCTURE OF GAN LATERALLY OVERGROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 73(6), 1998, pp. 747-749
Authors:
SU QM
ZHENG Y
WUTTIG M
Citation: Qm. Su et al., GRAPHOEPITAXIAL NITI SHAPE-MEMORY THIN-FILMS ON SI, Applied physics letters, 73(6), 1998, pp. 750-752
Authors:
MAROUDAS D
ZEPEDARUIZ LA
WEINBERG WH
Citation: D. Maroudas et al., KINETICS OF STRAIN RELAXATION THROUGH MISFIT DISLOCATION FORMATION INTHE GROWTH OF EPITAXIAL-FILMS ON COMPLIANT SUBSTRATES, Applied physics letters, 73(6), 1998, pp. 753-755
Authors:
REICHLING M
KLOTZBUCHER T
HARTMANN J
Citation: M. Reichling et al., LOCAL VARIATION OF ROOM-TEMPERATURE THERMAL-CONDUCTIVITY IN HIGH-QUALITY POLYCRYSTALLINE DIAMOND, Applied physics letters, 73(6), 1998, pp. 756-758
Authors:
SIEGAL MP
BARBOUR JC
PROVENCIO PN
TALLANT DR
FRIEDMANN TA
Citation: Mp. Siegal et al., AMORPHOUS-TETRAHEDRAL DIAMOND-LIKE CARBON LAYERED STRUCTURES RESULTING FROM FILM GROWTH ENERGETICS, Applied physics letters, 73(6), 1998, pp. 759-761
Authors:
HAN JH
SHIN MC
KANG SH
MORRIS JW
Citation: Jh. Han et al., EFFECTS OF PRECIPITATE DISTRIBUTION ON ELECTROMIGRATION IN AL-CU THIN-FILM INTERCONNECTS, Applied physics letters, 73(6), 1998, pp. 762-764
Authors:
NISHITANIGAMO M
SAKAGUCHI I
LOH KP
Citation: M. Nishitanigamo et al., CONFOCAL RAMAN-SPECTROSCOPIC OBSERVATION OF HEXAGONAL DIAMOND FORMATION FROM DISSOLVED CARBON IN NICKEL UNDER CHEMICAL-VAPOR-DEPOSITION CONDITIONS, Applied physics letters, 73(6), 1998, pp. 765-767
Authors:
KAWAI S
OGAWA T
LEE HS
DEMATTEI RC
FEIGELSON RS
Citation: S. Kawai et al., 2ND-HARMONIC GENERATION FROM NEEDLE-LIKE FERROELECTRIC DOMAINS IN SR0.6BA0.4ND2O6 SINGLE-CRYSTALS, Applied physics letters, 73(6), 1998, pp. 768-770
Authors:
CONVERTINO A
VALENTINI A
DEVITTORIO M
CINGOLANI R
Citation: A. Convertino et al., SWELLING IN ORGANIC-INORGANIC MULTILAYER SYSTEMS, Applied physics letters, 73(6), 1998, pp. 771-773
Authors:
ZIMMERMANN L
DENIJS JMM
ALKEMADE PFA
WESTERDUIN K
VANVEEN A
Citation: L. Zimmermann et al., EFFECT OF THE SILICON TOP LAYER OF SILICON IMPLANTED WITH OXYGEN ON THE UPTAKE AND RELEASE OF DEUTERIUM BY THE BURIED OXIDE, Applied physics letters, 73(6), 1998, pp. 774-776
Authors:
DONNER W
DOSCH H
ULRICH S
EHRHARDT H
ABERNATHY D
Citation: W. Donner et al., STRAIN RELAXATION OF BORON-NITRIDE THIN-FILMS ON SILICON, Applied physics letters, 73(6), 1998, pp. 777-779
Authors:
NEWNS DM
MISEWICH JA
TSUEI CC
GUPTA A
SCOTT BA
SCHROTT A
Citation: Dm. Newns et al., MOTT TRANSITION FIELD-EFFECT TRANSISTOR, Applied physics letters, 73(6), 1998, pp. 780-782
Authors:
LENOX C
YUAN P
NIE H
BAKLENOV O
HANSING C
CAMPBELL JC
HOLMES AL
STREETMAN BG
Citation: C. Lenox et al., THIN MULTIPLICATION REGION INALAS HOMOJUNCTION AVALANCHE PHOTODIODES, Applied physics letters, 73(6), 1998, pp. 783-784
Authors:
SU DS
NEUMANN W
HUNGER R
SCHUBERTBISCHOFF P
GIERSIG M
LEWERENZ HJ
SCHEER R
ZEITLER E
Citation: Ds. Su et al., CUAU-TYPE ORDERING IN EPITAXIAL CUINS2 FILMS, Applied physics letters, 73(6), 1998, pp. 785-787
Authors:
ZHANG ZG
LIU JS
WANG YN
ZHU JS
YAN F
CHEN XB
SHEN HM
Citation: Zg. Zhang et al., FATIGUE CHARACTERISTICS OF SRBI2TA2O9 THIN-FILMS PREPARED BY METALORGANIC DECOMPOSITION, Applied physics letters, 73(6), 1998, pp. 788-790
Authors:
SCHAFER J
YOUNG AP
BRILLSON LJ
NIIMI H
LUCOVSKY G
Citation: J. Schafer et al., DEPTH-DEPENDENT SPECTROSCOPIC DEFECT CHARACTERIZATION OF THE INTERFACE BETWEEN PLASMA-DEPOSITED SIO2 AND SILICON, Applied physics letters, 73(6), 1998, pp. 791-793
Authors:
OKAMOTO N
TAKAHASHI T
TANAKA H
Citation: N. Okamoto et al., NONALLOYED OHMIC CONTACT TO N-GAAS WITH GAS GAAS QUASI-METAL-INSULATOR-SEMICONDUCTOR STRUCTURE/, Applied physics letters, 73(6), 1998, pp. 794-796
Authors:
YOUTSEY C
ROMANO LT
ADESIDA I
Citation: C. Youtsey et al., GALLIUM NITRIDE WHISKERS FORMED BY SELECTIVE PHOTOENHANCED WET ETCHING OF DISLOCATIONS, Applied physics letters, 73(6), 1998, pp. 797-799
Authors:
MAIMON S
COHEN GM
FINKMAN E
BAHIR G
RITTER D
SCHACHAM SE
Citation: S. Maimon et al., STRAIN COMPENSATED INGAAS INGAP QUANTUM-WELL INFRARED DETECTOR FOR MIDWAVELENGTH BAND DETECTION/, Applied physics letters, 73(6), 1998, pp. 800-802