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Results: 1-25 | 26-50 | 51-56
Results: 26-50/56
ELECTRICAL-CONDUCTION OF BURIED SIO2 LAYERS ANALYZED BY PHOTON-STIMULATED ELECTRON-TUNNELING
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, ELECTRICAL-CONDUCTION OF BURIED SIO2 LAYERS ANALYZED BY PHOTON-STIMULATED ELECTRON-TUNNELING, Applied physics letters, 70(10), 1997, pp. 1260-1262
CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, CREATION OF P-B INTERFACE DEFECTS IN THERMAL SI SIO2 THROUGH ANNEALING/, Journal of physics. Condensed matter, 8(36), 1996, pp. 505-509
THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 TRACED BY ELECTRON-SPIN-RESONANCE/
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, THERMALLY-INDUCED INTERFACE DEGRADATION IN (111)SI SIO2 TRACED BY ELECTRON-SPIN-RESONANCE/, Physical review. B, Condensed matter, 54(16), 1996, pp. 11129-11132
ELECTRON-STATES AND MICROSTRUCTURE OF THIN A-C-H LAYERS
Authors: AFANASEV VV STESMANS A ANDERSSON MO
Citation: Vv. Afanasev et al., ELECTRON-STATES AND MICROSTRUCTURE OF THIN A-C-H LAYERS, Physical review. B, Condensed matter, 54(15), 1996, pp. 10820-10826
BAND OFFSETS AND ELECTRONIC-STRUCTURE OF SIC SIO2, INTERFACES/
Authors: AFANASEV VV BASSLER M PENSL G SCHULZ MJ VONKAMIENSKI ES
Citation: Vv. Afanasev et al., BAND OFFSETS AND ELECTRONIC-STRUCTURE OF SIC SIO2, INTERFACES/, Journal of applied physics, 79(6), 1996, pp. 3108-3114
CONFINEMENT PHENOMENA IN BURIED OXIDES OF SIMOX STRUCTURES AS AFFECTED BY PROCESSING
Authors: AFANASEV VV REVESZ AG HUGHES HL
Citation: Vv. Afanasev et al., CONFINEMENT PHENOMENA IN BURIED OXIDES OF SIMOX STRUCTURES AS AFFECTED BY PROCESSING, Journal of the Electrochemical Society, 143(2), 1996, pp. 695-700
CONDUCTING AND CHARGE-TRAPPING DEFECTS IN BURIED OXIDE LAYERS OF SIMOX STRUCTURES
Authors: AFANASEV VV BROWN GA HUGHES HL LIU ST REVESZ AG
Citation: Vv. Afanasev et al., CONDUCTING AND CHARGE-TRAPPING DEFECTS IN BURIED OXIDE LAYERS OF SIMOX STRUCTURES, Journal of the Electrochemical Society, 143(1), 1996, pp. 347-352
HOLE TRAPS IN OXIDE LAYERS THERMALLY GROWN ON SIC
Authors: AFANASEV VV STESMANS A
Citation: Vv. Afanasev et A. Stesmans, HOLE TRAPS IN OXIDE LAYERS THERMALLY GROWN ON SIC, Applied physics letters, 69(15), 1996, pp. 2252-2254
ANNEALING-INDUCED DEGRADATION OF THERMAL SIO2 - S-CENTER GENERATION
Authors: STESMANS A AFANASEV VV
Citation: A. Stesmans et Vv. Afanasev, ANNEALING-INDUCED DEGRADATION OF THERMAL SIO2 - S-CENTER GENERATION, Applied physics letters, 69(14), 1996, pp. 2056-2058
ELIMINATION OF SIC SIO2 INTERFACE STATES BY PREOXIDATION ULTRAVIOLET-AZONE CLEANING/
Authors: AFANASEV VV STESMANS A BASSLER M PENSL G SCHULZ MJ HARRIS CI
Citation: Vv. Afanasev et al., ELIMINATION OF SIC SIO2 INTERFACE STATES BY PREOXIDATION ULTRAVIOLET-AZONE CLEANING/, Applied physics letters, 68(15), 1996, pp. 2141-2143
EFFECT OF BASIC PARAMETERS OF COMPUTER MO DELING ON THE BEHAVIOR OF DYNAMIC-SYSTEMS WITH STRANGE ATTRACTORS
Authors: AFANASEV VV MIKHAILOV SV POLSKII YE TOROPOV AY
Citation: Vv. Afanasev et al., EFFECT OF BASIC PARAMETERS OF COMPUTER MO DELING ON THE BEHAVIOR OF DYNAMIC-SYSTEMS WITH STRANGE ATTRACTORS, Pis'ma v Zurnal tehniceskoj fiziki, 21(23), 1995, pp. 10-14
RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2
Authors: AFANASEV VV DENIJS JMM STESMANS A BALK P
Citation: Vv. Afanasev et al., RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2, Microelectronic engineering, 28(1-4), 1995, pp. 43-46
CHARGE TRAPPING AND INTERFACE STATE GENERATION IN 6H-SIC MOS STRUCTURES
Authors: AFANASEV VV BASSLER M PENSL G SCHULZ MJ
Citation: Vv. Afanasev et al., CHARGE TRAPPING AND INTERFACE STATE GENERATION IN 6H-SIC MOS STRUCTURES, Microelectronic engineering, 28(1-4), 1995, pp. 197-200
THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES
Authors: DRUIJF KG DENIJS JMM VANDERDRIFT E AFANASEV VV GRANNEMAN EHA BALK P
Citation: Kg. Druijf et al., THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES, Journal of non-crystalline solids, 187, 1995, pp. 206-210
THE ROLE OF HYDROGEN IN THE ACTION OF FLUORINE IN SI SIO2 STRUCTURES/
Authors: AFANASEV VV DENIJS JMM BALK P
Citation: Vv. Afanasev et al., THE ROLE OF HYDROGEN IN THE ACTION OF FLUORINE IN SI SIO2 STRUCTURES/, Journal of non-crystalline solids, 187, 1995, pp. 248-252
HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED OXIDES - CORRESPONDENCE BETWEEN ESR AND C-V RESULTS
Authors: VANHEUSDEN K STESMANS A AFANASEV VV
Citation: K. Vanheusden et al., HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED OXIDES - CORRESPONDENCE BETWEEN ESR AND C-V RESULTS, Journal of non-crystalline solids, 187, 1995, pp. 253-256
DEGRADATION OF THE THERMAL OXIDE OF THE SI SIO2AL SYSTEM DUE TO VACUUM-ULTRAVIOLET IRRADIATION/
Authors: AFANASEV VV DENIJS JMM BALK P STESMANS A
Citation: Vv. Afanasev et al., DEGRADATION OF THE THERMAL OXIDE OF THE SI SIO2AL SYSTEM DUE TO VACUUM-ULTRAVIOLET IRRADIATION/, Journal of applied physics, 78(11), 1995, pp. 6481-6490
COMBINED ELECTRON-SPIN-RESONANCE AND CAPACITANCE-VOLTAGE ANALYSIS OF HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED SIO2
Authors: VANHEUSDEN K STESMANS A AFANASEV VV
Citation: K. Vanheusden et al., COMBINED ELECTRON-SPIN-RESONANCE AND CAPACITANCE-VOLTAGE ANALYSIS OF HYDROGEN-ANNEALING INDUCED POSITIVE CHARGE IN BURIED SIO2, Journal of applied physics, 77(6), 1995, pp. 2419-2424
CHARGE INSTABILITY OF BONDED SILICON DIOXIDE LAYER INDUCED BY WET-PROCESSING
Authors: AFANASEV VV REVESZ AG BROWN GA HUGHES HL
Citation: Vv. Afanasev et al., CHARGE INSTABILITY OF BONDED SILICON DIOXIDE LAYER INDUCED BY WET-PROCESSING, Journal of the Electrochemical Society, 142(6), 1995, pp. 1983-1986
CONDITIONS FOR THE EXCITATION OF A LAMINAR KINETIC SINGING FLAME
Authors: AFANASEV VV ABRUKOV SA KIDIN NI KUZMIN AK
Citation: Vv. Afanasev et al., CONDITIONS FOR THE EXCITATION OF A LAMINAR KINETIC SINGING FLAME, Combustion, explosion, and shock waves, 31(4), 1995, pp. 432-436
SIO2 HOLE TRAPS WITH SMALL CROSS-SECTION
Authors: AFANASEV VV DENIJS JMM BALK P
Citation: Vv. Afanasev et al., SIO2 HOLE TRAPS WITH SMALL CROSS-SECTION, Applied physics letters, 66(14), 1995, pp. 1738-1740
WAFER BONDING INDUCED DEGRADATION OF THERMAL SILICON DIOXIDE LAYERS ON SILICON
Authors: AFANASEV VV ERICSSON P BENGTSSON S ANDERSSON MO
Citation: Vv. Afanasev et al., WAFER BONDING INDUCED DEGRADATION OF THERMAL SILICON DIOXIDE LAYERS ON SILICON, Applied physics letters, 66(13), 1995, pp. 1653-1655
INJECTION SPECTROSCOPY OF LOCALIZED STATES IN THIN INSULATING LAYERS ON SEMICONDUCTOR SURFACES
Authors: AFANASEV VV ADAMCHUK VK
Citation: Vv. Afanasev et Vk. Adamchuk, INJECTION SPECTROSCOPY OF LOCALIZED STATES IN THIN INSULATING LAYERS ON SEMICONDUCTOR SURFACES, Progress in Surface Science, 47(4), 1994, pp. 301-394
ELIMINATION OF HYDROGEN-RELATED INSTABILITIES IN SI SIO2 STRUCTURES BY FLUORINE IMPLANTATION/
Authors: AFANASEV VV DENIJS JMM BALK P
Citation: Vv. Afanasev et al., ELIMINATION OF HYDROGEN-RELATED INSTABILITIES IN SI SIO2 STRUCTURES BY FLUORINE IMPLANTATION/, Journal of applied physics, 76(12), 1994, pp. 7990-7997
DEEP AND SHALLOW ELECTRON TRAPPING IN THE BURIED OXIDE LAYER OF SIMOXSTRUCTURES
Authors: AFANASEV VV REVESZ AG BROWN GA HUGHES HL
Citation: Vv. Afanasev et al., DEEP AND SHALLOW ELECTRON TRAPPING IN THE BURIED OXIDE LAYER OF SIMOXSTRUCTURES, Journal of the Electrochemical Society, 141(10), 1994, pp. 2801-2804
Risultati: 1-25 | 26-50 | 51-56