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Results: 1-25/26
Authors:
CLEMENT M
DENIJS JMM
BALK P
SCHUT H
VANVEEN A
Citation: M. Clement et al., TRANSPORT OF POSITRONS IN THE ELECTRICALLY BIASED METAL-OXIDE-SILICONSYSTEM, Journal of applied physics, 81(4), 1997, pp. 1943-1955
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., STOW STATES IN VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS, Journal of applied physics, 79(3), 1996, pp. 1505-1510
Authors:
CLEMENT M
DENIJS JMM
BALK P
SCHUT H
VANVEEN A
Citation: M. Clement et al., ANALYSIS OF POSITRON BEAM DATA BY THE COMBINED USE OF THE SHAPE-PARAMETER AND WING-PARAMETER, Journal of applied physics, 79(12), 1996, pp. 9029-9036
Authors:
BALK P
Citation: P. Balk, DIELECTRICS FOR FIELD-EFFECT TECHNOLOGY, Advanced materials, 7(8), 1995, pp. 703-710
Authors:
AFANASEV VV
DENIJS JMM
STESMANS A
BALK P
Citation: Vv. Afanasev et al., RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2, Microelectronic engineering, 28(1-4), 1995, pp. 43-46
Authors:
BALK P
Citation: P. Balk, DIELECTRICS IN MICROELECTRONICS - PROBLEMS AND PERSPECTIVES, Journal of non-crystalline solids, 187, 1995, pp. 1-9
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
AFANASEV VV
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., THE MICROSCOPIC NATURE OF DONOR-TYPE SI-SIO2 INTERFACE STATES, Journal of non-crystalline solids, 187, 1995, pp. 206-210
Authors:
AFANASEV VV
DENIJS JMM
BALK P
Citation: Vv. Afanasev et al., THE ROLE OF HYDROGEN IN THE ACTION OF FLUORINE IN SI SIO2 STRUCTURES/, Journal of non-crystalline solids, 187, 1995, pp. 248-252
Authors:
AFANASEV VV
DENIJS JMM
BALK P
STESMANS A
Citation: Vv. Afanasev et al., DEGRADATION OF THE THERMAL OXIDE OF THE SI SIO2AL SYSTEM DUE TO VACUUM-ULTRAVIOLET IRRADIATION/, Journal of applied physics, 78(11), 1995, pp. 6481-6490
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., RECOVERY OF VACUUM-ULTRAVIOLET IRRADIATED METAL-OXIDE-SILICON SYSTEMS, Journal of applied physics, 78(1), 1995, pp. 306-316
Authors:
CLEMENT M
DENIJS JMM
VANVEEN A
SCHUT H
BALK P
Citation: M. Clement et al., EFFECT OF POST OXIDATION ANNEAL ON VUV RADIATION-HARDNESS OF THE SI SIO2 SYSTEM STUDIED BY POSITRON-ANNIHILATION SPECTROSCOPY/, IEEE transactions on nuclear science, 42(6), 1995, pp. 1717-1724
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., PRODUCTION OF ATOMIC-HYDROGEN IN AL-SIO2-SI SYSTEMS BY VACUUM-ULTRAVIOLET RADIATION, Applied physics letters, 67(21), 1995, pp. 3162-3164
Authors:
AFANASEV VV
DENIJS JMM
BALK P
Citation: Vv. Afanasev et al., SIO2 HOLE TRAPS WITH SMALL CROSS-SECTION, Applied physics letters, 66(14), 1995, pp. 1738-1740
Authors:
WERNER K
BUTZKE S
RADELAAR S
BALK P
Citation: K. Werner et al., DETERMINATION OF THE STICKING COEFFICIENT OF DISILANE ON SI(001) USING THE 1ST REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION PERIOD, Journal of crystal growth, 136(1-4), 1994, pp. 322-327
Authors:
WERNER K
BUTZKE S
RADELAAR S
BALK P
Citation: K. Werner et al., EVIDENCE FOR NON-HYDROGEN DESORPTION LIMITED GROWTH OF SI FROM DISILANE AT VERY-LOW TEMPERATURES IN GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 136(1-4), 1994, pp. 338-343
Authors:
AFANASEV VV
DENIJS JMM
BALK P
Citation: Vv. Afanasev et al., ELIMINATION OF HYDROGEN-RELATED INSTABILITIES IN SI SIO2 STRUCTURES BY FLUORINE IMPLANTATION/, Journal of applied physics, 76(12), 1994, pp. 7990-7997
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., NATURE OF DEFECTS IN THE SI-SIO2 SYSTEM GENERATED BY VACUUM-ULTRAVIOLET IRRADIATION, Applied physics letters, 65(3), 1994, pp. 347-349
Authors:
DENIJS JMM
DRUIJF KG
AFANASEV VV
VANDERDRIFT E
BALK P
Citation: Jmm. Denijs et al., HYDROGEN-INDUCED DONOR-TYPE SI SIO2 INTERFACE STATES/, Applied physics letters, 65(19), 1994, pp. 2428-2430
Authors:
LIBEZNY M
JAIN SC
POORTMANS J
CAYMAX M
NIJS J
MERTENS R
WERNER K
BALK P
Citation: M. Libezny et al., PHOTOLUMINESCENCE DETERMINATION OF THE FERMI ENERGY IN HEAVILY-DOPED STRAINED SI1-XGEX LAYERS, Applied physics letters, 64(15), 1994, pp. 1953-1955
SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI SIO2 STRUCTURES BY IMPLANTED FLUORINE/
Authors:
AFANASEV VV
DEPAS M
DENIJS JMM
BALK P
Citation: Vv. Afanasev et al., SIMULTANEOUS ELIMINATION OF ELECTRICALLY ACTIVE DEFECTS IN SI SIO2 STRUCTURES BY IMPLANTED FLUORINE/, Microelectronic engineering, 22(1-4), 1993, pp. 93-96
Authors:
DENIJS JMM
BALK P
Citation: Jmm. Denijs et P. Balk, ELECTRON TRAPPING PROPERTIES OF GE-IMPLANTED SIO2, Microelectronic engineering, 22(1-4), 1993, pp. 123-126
Authors:
DRUIJF KG
DENIJS JMM
VANDERDRIFT E
GRANNEMAN EHA
BALK P
Citation: Kg. Druijf et al., CHARGE-EXCHANGE MECHANISMS OF SLOW STATES IN SI SIO2/, Microelectronic engineering, 22(1-4), 1993, pp. 231-234
Authors:
BALK P
DENIJS J
Citation: P. Balk et J. Denijs, PROCEEDINGS OF THE 8TH BIENNIAL CONFERENCE ON INSULATING FILMS ON SEMICONDUCTORS - JUNE 2-5, 1993 DELFT, THE NETHERLANDS, Microelectronic engineering, 22(1-4), 1993, pp. 211800011-211800011
Authors:
BUTZKE S
WERNER K
TROMMEL J
RADELAAR S
BALK P
Citation: S. Butzke et al., STUDY OF GROWTH-KINETICS IN SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXYWITH DISILANE USING RHEED INTENSITY OSCILLATIONS, Thin solid films, 228(1-2), 1993, pp. 27-31
Authors:
SCHEINOWITZ DA
TROMMEL J
WERNER K
RADELAAR S
BALK P
Citation: Da. Scheinowitz et al., COMPARATIVE-STUDY OF MOLECULAR-BEAM INJECTION SYSTEMS FOR GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 986-989