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Results:
1-20
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Results: 20
Authors:
DASHIELL MW
TROEGER RT
ROE KJ
KHAN AS
ORNER B
OLOWOLAFE JO
BERGER PR
WILSON RG
KOLODZEY J
Citation: Mw. Dashiell et al., ELECTRICAL AND OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED GE1-YCY, Thin solid films, 321, 1998, pp. 47-50
Authors:
ROMMEL SL
DILLON TE
DASHIELL MW
FENG H
KOLODZEY J
BERGER PR
THOMPSON PE
HOBART KD
LAKE R
SEABAUGH AC
KLIMECK G
BLANKS DK
Citation: Sl. Rommel et al., ROOM-TEMPERATURE OPERATION OF EPITAXIALLY GROWN SI SI0.5GE0.5/SI RESONANT INTERBAND TUNNELING DIODES/, Applied physics letters, 73(15), 1998, pp. 2191-2193
Authors:
SHAO XP
ROMMEL SL
ORNER BA
FENG H
DASHIELL MW
TROEGER RT
KOLODZEY J
BERGER PR
LAURSEN T
Citation: Xp. Shao et al., 1.3 MU-M PHOTORESPONSIVITY IN SI-BASED GE1-XCX PHOTODIODES, Applied physics letters, 72(15), 1998, pp. 1860-1862
Authors:
SHAO XP
ROMMEL SL
ORNER BA
KOLODZEY J
BERGER PR
Citation: Xp. Shao et al., A P-GE1-XCX N-SI HETEROJUNCTION DIODE CROWN BY MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 18(9), 1997, pp. 411-413
Authors:
SHAO XP
ROMMEL SL
OMER BA
BERGER PR
KOLODZEY J
UNRUH KM
Citation: Xp. Shao et al., LOW-RESISTANCE OHMIC CONTACTS TO P-GE1-XCX ON SI, IEEE electron device letters, 18(1), 1997, pp. 7-9
Authors:
KHAN AST
BERGER PR
GUARIN FJ
IYER SS
Citation: Ast. Khan et al., NEAR-BAND-EDGE PHOTOLUMINESCENCE FROM PSEUDOMORPHIC TENSIALLY STRAINED SI0.985C0.015 ALLOY, Thin solid films, 294(1-2), 1997, pp. 122-124
Authors:
GAO W
BERGER PR
ZYDZIK GJ
OBRYAN HM
SIVCO DL
CHO AY
Citation: W. Gao et al., IN0.53CA0.47AS MSM PHOTODIODES WITH TRANSPARENT CTO SCHOTTKY CONTACTSAND DIGITAL SUPERLATTICE GRADING, I.E.E.E. transactions on electron devices, 44(12), 1997, pp. 2174-2179
Authors:
CHEN F
ORNER BA
GUERIN D
KHAN A
BERGER PR
SHAH SI
KOLODZEY J
Citation: F. Chen et al., CURRENT TRANSPORT CHARACTERISTICS OF SIGEC SI HETEROJUNCTION DIODE/, IEEE electron device letters, 17(12), 1996, pp. 589-591
Authors:
PAMULAPATI J
BHATTACHARYA PK
SINGH J
BERGER PR
SNYDER CW
ORR BG
TOBER RL
Citation: J. Pamulapati et al., REALIZATION OF IN-SITU SUB 2-DIMENSIONAL QUANTUM STRUCTURES BY STRAINED-LAYER GROWTH PHENOMENA IN THE INXGA1-XAS GAAS SYSTEM/, Journal of electronic materials, 25(3), 1996, pp. 479-483
Authors:
ORNER BA
KHAN A
HITS D
CHEN F
ROE K
PICKETT J
SHAO X
WILSON RG
BERGER PR
KOLODZEY J
Citation: Ba. Orner et al., OPTICAL-PROPERTIES OF GE1-YCY ALLOYS, Journal of electronic materials, 25(2), 1996, pp. 297-300
Authors:
GAO W
BERGER PR
Citation: W. Gao et Pr. Berger, LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP USING RARE-EARTH-TREATED MELTS, Journal of applied physics, 80(12), 1996, pp. 7094-7103
Authors:
KHAN AST
BERGER PR
GUARIN FJ
IYER SS
Citation: Ast. Khan et al., BAND-EDGE PHOTOLUMINESCENCE FROM PSEUDOMORPHIC SI0.96SN0.04 ALLOY, Applied physics letters, 68(22), 1996, pp. 3105-3107
Authors:
KOLODZEY J
BERGER PR
ORNER BA
HITS D
CHEN F
KHAN A
SHAO X
WAITE MM
SHAH SI
SWANN CP
UNRUH KM
Citation: J. Kolodzey et al., OPTICAL AND ELECTRONIC-PROPERTIES OF SIGEC ALLOYS GROWN ON SI SUBSTRATE, Journal of crystal growth, 157(1-4), 1995, pp. 386-391
Authors:
GAO W
BERGER PR
HUNSPERGER RG
ZYDZIK G
RHODES WW
OBRYAN HM
SIVCO D
CHO AY
Citation: W. Gao et al., TRANSPARENT AND OPAQUE SCHOTTKY CONTACTS ON UNDOPED IN0.52AL0.48AS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(25), 1995, pp. 3471-3473
Authors:
BERGER PR
CHU SNG
LOGAN RA
BYRNE E
COBLENTZ D
LEE J
HA NT
DUTTA NK
Citation: Pr. Berger et al., SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BYMETALORGANIC CHEMICAL-VAPOR-DEPOSITION (VOL 73, PG 4095, 1993), Journal of applied physics, 76(4), 1994, pp. 2562-2562
Authors:
NICHOLS DT
LOPATA J
HOBSON WS
DUTTA NK
BERGER PR
SIVCO DL
CHO AY
Citation: Dt. Nichols et al., MONOLITHIC GAAS ALGAAS OPTICAL TRANSMITTER CIRCUIT USING A SINGLE GROWTH STEP/, Electronics Letters, 30(6), 1994, pp. 490-491
Authors:
GAO W
KHAN AS
BERGER PR
HUNSPERGER RG
ZYDZIK G
OBRYAN HM
SIVCO D
CHO AY
Citation: W. Gao et al., IN0.53GA0.47AS METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH TRANSPARENTCADMIUM TIN OXIDE SCHOTTKY CONTACTS, Applied physics letters, 65(15), 1994, pp. 1930-1932
Authors:
BERGER PR
CHU SNG
LOGAN RA
BYRNE E
COBLENTZ D
LEE J
HA NT
DUTTA NK
Citation: Pr. Berger et al., SUBSTRATE ORIENTATION EFFECTS ON DOPANT INCORPORATION IN INP GROWN BYMETALORGANIC CHEMICAL VAPOR-DEPOSITION, Journal of applied physics, 73(8), 1993, pp. 4095-4097
Authors:
NICHOLS D
DUTTA NK
BERGER PR
SMITH PR
SIVCO D
CHO AY
Citation: D. Nichols et al., MONOLITHIC GAAS ALGAAS PIN MESFET PHOTORECEIVER USING A SINGLE MOLECULAR-BEAM EPITAXY GROWTH STEP/, Electronics Letters, 29(12), 1993, pp. 1133-1134
Authors:
DUTTA NK
LOPATA J
BERGER PR
WANG SJ
SMITH PR
SIVCO DL
CHO AY
Citation: Nk. Dutta et al., 10 GHZ BANDWIDTH MONOLITHIC P-I-N MODULATION-DOPED FIELD-EFFECT TRANSISTOR PHOTORECEIVER, Applied physics letters, 63(15), 1993, pp. 2115-2116
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