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Results:
1-25
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Results: 25
Authors:
BOUARISSA N
Citation: N. Bouarissa, ELECTRON VALENCE CHARGE-DENSITIES IN HG1-XCDXTE MIXED-CRYSTALS, Infrared physics & technology, 39(5), 1998, pp. 265-270
Authors:
LAREF A
BOUHAFS B
AOURAG H
BOUARISSA N
Citation: A. Laref et al., CALCULATION OF THE ELECTRONIC AND ELASTIC PROPERTIES OF CARBON, Journal of physics. Condensed matter, 10(14), 1998, pp. 3195-3200
Authors:
BOUARISSA N
CERTIER M
AMRANE N
AOURAG H
Citation: N. Bouarissa et al., STUDY ON MOMENTUM DENSITY IN NARROW-GAP MIXED III-V ALLOYS BY POSITRON-ANNIHILATION UNDER PRESSURE, Materials science & engineering. B, Solid-state materials for advanced technology, 54(3), 1998, pp. 161-167
Authors:
BOUARISSA N
Citation: N. Bouarissa, EFFECTS OF COMPOSITIONAL DISORDER UPON ELECTRONIC AND LATTICE PROPERTIES OF GAXIN1-XAS, Physics letters. A, 245(3-4), 1998, pp. 285-291
Authors:
LAREF A
BOUHAFS B
CERTIER M
BOUARISSA N
AOURAG H
Citation: A. Laref et al., TRANSFERABLE NONORTHOGONAL TIGHT-BINDING MODEL FOR SILICON, Physica status solidi. b, Basic research, 208(2), 1998, pp. 413-426
Authors:
BOUARISSA N
CHARIFI Z
Citation: N. Bouarissa et Z. Charifi, THE ALLOYING EFFECT ON POSITRON STATES IN SI1-XGEX, Materials chemistry and physics, 53(2), 1998, pp. 179-184
Authors:
BOUARISSA N
WALKER AB
AOURAG H
Citation: N. Bouarissa et al., BACKSCATTERING OF SLOW POSITRONS FROM SEMIINFINITE ALUMINUM, Journal of applied physics, 83(7), 1998, pp. 3643-3648
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, ELECTRON-POSITRON MOMENTUM DENSITY IN INASXSB1-X, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(3), 1997, pp. 325-334
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, THE TEMPERATURE-DEPENDENCE OF THE BAND-GAPS IN NARROW-GAP SEMICONDUCTORS, Infrared physics & technology, 38(3), 1997, pp. 153-161
Authors:
BOUARISSA N
ZAOUI A
DUFOUR JP
CERTIER M
AOURAG H
Citation: N. Bouarissa et al., ELECTRONIC-STRUCTURE OF GASB UNDER TEMPERATURE AND PRESSURE EFFECTS, Materials science & engineering. B, Solid-state materials for advanced technology, 47(1), 1997, pp. 1-12
Authors:
CHARIFI Z
BOUARISSA N
Citation: Z. Charifi et N. Bouarissa, THE EFFECT OF THE VIOLATION OF VEGARD LAW ON THE OPTICAL BOWING IN SI1-XGEX ALLOYS, Physics letters. A, 234(6), 1997, pp. 493-497
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN GAXIN1-XSB, Physica status solidi. b, Basic research, 199(2), 1997, pp. 403-416
Authors:
BOUARISSA N
WEST RN
AOURAG H
Citation: N. Bouarissa et al., THEORETICAL INVESTIGATION OF THE PRESSURE DEPENDENCES OF POSITRON-ANNIHILATION IN INAS AND INSB, Materials chemistry and physics, 47(1), 1997, pp. 23-30
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, THE DISORDER EFFECT ON THE ELECTRON AND POSITRON STRUCTURE IN THE SEMICONDUCTOR ALLOY INXGA1-XSB, Solid state communications, 101(3), 1997, pp. 205-210
Authors:
BOUARISSA N
ABBAR B
DUFOUR JP
AMRANE N
AOURAG H
Citation: N. Bouarissa et al., WORK FUNCTION AND ENERGY-LEVELS OF POSITRONS IN ELEMENTAL SEMICONDUCTORS, Materials chemistry and physics, 44(3), 1996, pp. 267-272
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, BAND-STRUCTURE CALCULATIONS OF INXGA1-XSB UNDER PRESSURE, Infrared physics & technology, 36(6), 1995, pp. 973-980
Authors:
BOUARISSA N
AMRANE N
AOURAG H
Citation: N. Bouarissa et al., ELECTRONIC-STRUCTURE OF PSEUDOBINARY SEMICONDUCTOR ALLOYS INXGA1-X AND INASXSB1-X, Infrared physics & technology, 36(4), 1995, pp. 755-761
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, POSITRON ENERGY-LEVELS IN NARROW-GAP SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 58-66
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, THEORETICAL INVESTIGATION OF THE PRESSURE DEPENDENCES OF ENERGY GAPS IN INAS AND INSB, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 122-132
Authors:
ABID H
BADI N
DRIZ M
BOUARISSA N
BENKABOU KH
KHELIFA B
AOURAG H
Citation: H. Abid et al., ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 133-139
Authors:
BOUARISSA N
AOURAG H
Citation: N. Bouarissa et H. Aourag, CONDUCTION-BAND EDGE CHARGE-DENSITIES IN INXGA1-XSB, Physica status solidi. b, Basic research, 190(1), 1995, pp. 227-239
Authors:
AOURAG H
ABDERRAHMANE SA
AMRANE N
AMRANE N
BOUARISSA N
Citation: H. Aourag et al., ELECTRONIC AND POSITRONIC STRUCTURE OF DIAMOND UNDER NORMAL AND HIGH-PRESSURE, Physica status solidi. b, Basic research, 189(2), 1995, pp. 417-432
Authors:
ALKHAFAJI ST
AMRANE N
BOUARISSA N
BADI N
SOUDINI B
SEHIL M
AOURAG H
Citation: St. Alkhafaji et al., PRESSURE-DEPENDENCE OF ELECTRON AND POSITRON BAND STRUCTURES IN ELEMENTAL SEMICONDUCTORS, Physica status solidi. b, Basic research, 189(1), 1995, pp. 139-151
Authors:
BOUARISSA N
WEST RN
AOURAG H
Citation: N. Bouarissa et al., POSITRON-ANNIHILATION IN NARROW-GAP SEMICONDUCTORS, Physica status solidi. b, Basic research, 188(2), 1995, pp. 723-734
Authors:
BOUARISSA N
KOBAYASI T
NARA H
AOURAG H
Citation: N. Bouarissa et al., PRESSURE-DEPENDENCE OF POSITRON-ANNIHILATION IN GERMANIUM, Solid state communications, 96(9), 1995, pp. 689-695
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