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Results:
1-25
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Results: 25
Authors:
BUTCHER KSA
TANSLEY TL
LI X
Citation: Ksa. Butcher et al., X-RAY PHOTOELECTRON-SPECTROSCOPY DEPTH PROFILING OF ALUMINUM NITRIDE THIN-FILMS, Surface and interface analysis, 25(2), 1997, pp. 99-104
Authors:
ZHOU B
BUTCHER KSA
ZOU H
LI X
TANSLEY TL
Citation: B. Zhou et al., PHOTOCONDUCTIVE DECAY IN LCVD PECVD LOW-TEMPERATURE-GROWN GAN/, Solid-state electronics, 41(2), 1997, pp. 279-281
Authors:
BUTCHER KSA
TANSLEY TL
LI X
ZHOU B
Citation: Ksa. Butcher et al., PHOTOLYTIC ABSORBATE REMOVAL DURING THE GROWTH OF ALUMINUM NITRIDE BYREMOTE MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION, Solid-state electronics, 41(2), 1997, pp. 305-314
Authors:
BUTCHER KSA
EGAN RJ
TANSLEY TL
ALEXIEV D
Citation: Ksa. Butcher et al., SULFUR CONTAMINATION OF (100)GAAS RESULTING FROM SAMPLE PREPARATION PROCEDURES AND ATMOSPHERIC EXPOSURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 152-158
Authors:
LUMPKIN NE
LUMPKIN GR
BUTCHER KSA
Citation: Ne. Lumpkin et al., INVESTIGATION OF LOW-RESISTANCE AND HIGH-RESISTANCE NI-GE-AN OHMIC CONTACTS TO N(+) GAAS USING ELECTRON MICROBEAM AND SURFACE ANALYTICAL TECHNIQUES, Journal of materials research, 11(5), 1996, pp. 1244-1254
Authors:
KUMAR S
BUTCHER KSA
TANSLEY TL
Citation: S. Kumar et al., X-RAY PHOTOELECTRON-SPECTROSCOPY CHARACTERIZATION OF RADIO-FREQUENCY REACTIVELY SPUTTERED CARBON NITRIDE THIN-FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(5), 1996, pp. 2687-2692
Authors:
ZHOU B
LI X
TANSLEY TL
BUTCHER KSA
Citation: B. Zhou et al., MICROWAVE PLASMA-ASSISTED LCVD GROWTH AND CHARACTERIZATION OF GAN, Applied surface science, 101, 1996, pp. 643-646
Authors:
BUTCHER KSA
TANSLEY TL
ALEXIEV D
Citation: Ksa. Butcher et al., AN INSTRUMENTAL SOLUTION TO THE PHENOMENON OF NEGATIVE CAPACITANCES IN SEMICONDUCTORS, Solid-state electronics, 39(3), 1996, pp. 333-336
Authors:
EGAN RJ
CHIN VWL
BUTCHER KSA
TANSLEY TL
Citation: Rj. Egan et al., HYDROGENATION PASSIVATION OF ACCEPTORS IN MOCVD GROWN P-INSB, Solid state communications, 98(8), 1996, pp. 751-754
Authors:
ZHOU B
LI X
TANSLEY TL
BUTCHER KSA
Citation: B. Zhou et al., GROWTH MECHANISMS IN EXCIMER-LASER PHOTOLYTIC DEPOSITION OF GALLIUM NITRIDE AT 500-DEGREES-C, Journal of crystal growth, 160(3-4), 1996, pp. 201-206
Authors:
MO L
BUTCHER KSA
ALEXIEV D
Citation: L. Mo et al., EFFECT OF CRUCIBLE MATERIALS ON IMPURITIES IN LPE-GAAS, Journal of crystal growth, 160(1-2), 1996, pp. 7-12
Authors:
MO L
BUTCHER KSA
ALEXIEV D
Citation: L. Mo et al., EFFECT OF CRUCIBLE MATERIALS ON IMPURITIES IN LPE GAAS, Journal of crystal growth, 158(4), 1996, pp. 403-408
Authors:
BUTCHER KSA
ALEXIEV D
BOLDEMAN JW
Citation: Ksa. Butcher et al., A NEUTRON DAMAGE STUDY OF LIQUID-PHASE EPITAXIAL GAAS AND HIGH-PURITYSILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(3), 1995, pp. 355-370
Authors:
BUTCHER KSA
MO L
ALEXIEV D
TANSLEY TL
Citation: Ksa. Butcher et al., GROWTH OF HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS IN A SILICA GROWTH SYSTEM, Journal of crystal growth, 156(4), 1995, pp. 361-367
Authors:
ZHOU B
LI X
TANSLEY TL
BUTCHER KSA
PHILLIPS MR
Citation: B. Zhou et al., GROWTH OF GAN FILMS BY COMBINED LASER AND MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 151(3-4), 1995, pp. 249-253
Authors:
LAI ST
NENER BD
ALEXIEV D
BUTCHER KSA
Citation: St. Lai et al., OPTICAL DEEP-LEVEL TRANSIENT CONDUCTANCE CHARACTERIZATION OF SEMIINSULATING GALLIUM-ARSENIDE TREATED WITH HYDROGEN PLASMA, JPN J A P 1, 33(1A), 1994, pp. 199-201
Authors:
SUMNER TJ
GRANT SM
ALEXIEV D
BUTCHER KSA
Citation: Tj. Sumner et al., LPE GAAS AS AN X-RAY-DETECTOR FOR ASTRONOMY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 518-521
Authors:
ALEXIEV D
BUTCHER KSA
EDMONDSON M
TANSLEY TL
Citation: D. Alexiev et al., NEUTRON TRANSMUTATION DOPING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 86(3-4), 1994, pp. 288-292
Authors:
ALEXIEV D
BUTCHER KSA
WILLIAMS AA
Citation: D. Alexiev et al., GAMMA-RAY DETECTORS FROM THERMALLY ANNEALED BRIDGMAN-GROWN CDTE, Journal of crystal growth, 142(3-4), 1994, pp. 303-309
Authors:
BUTCHER KSA
ALEXIEV D
TANSLEY TL
Citation: Ksa. Butcher et al., LITHIUM COMPENSATION OF GAAS, Journal of crystal growth, 140(1-2), 1994, pp. 9-18
Authors:
ALEXIEV D
BUTCHER KSA
EDMONDSON M
TANSLEY TL
Citation: D. Alexiev et al., THERMAL ANNEALING OF LIQUID-PHASE EPITAXIAL GALLIUM-ARSENIDE, Journal of crystal growth, 135(1-2), 1994, pp. 367-369
Authors:
ALEXIEV D
BUTCHER KSA
Citation: D. Alexiev et Ksa. Butcher, CALCULATION OF THE RESPONSE OF A MILLER EXPONENTIAL SIGNAL CORRELATORTO ODLTS SIGNALS, JPN J A P 1, 32(4), 1993, pp. 1855-1856
Authors:
BUTCHER KSA
ALEXIEV D
CHIN VWL
TANSLEY TL
EGAN RJ
KEANE M
Citation: Ksa. Butcher et al., SCHOTTKY-BARRIER HEIGHT MODIFICATION ON HIGH-PURITY LPE GAAS FOLLOWING A SULFUR-BASED ETCH, Semiconductor science and technology, 8(7), 1993, pp. 1451-1458
Authors:
ALEXIEV D
BUTCHER KSA
Citation: D. Alexiev et Ksa. Butcher, NEUTRON TRANSMUTATION DOPING OF GALLIUM-ARSENIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(3), 1993, pp. 430-436
Authors:
BUTCHER KSA
ALEXIEV D
TANSLEY TL
Citation: Ksa. Butcher et al., MINORITY-CARRIER DIFFUSION LENGTHS FOR HIGH-PURITY LIQUID-PHASE EPITAXIAL GAAS, Australian journal of physics, 46(2), 1993, pp. 317-325
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