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Results: 1-25 | 26-47 |
Results: 26-47/47
METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS
Authors: SYRKIN AL ANDREEV AN LEBEDEV AA RASTEGAEVA MG CHELNOKOV VE
Citation: Al. Syrkin et al., METAL-N-6H-SIC SURFACE-BARRIER HEIGHT - EXPERIMENTAL-DATA AND DESCRIPTION IN THE TRADITIONAL TERMS, Journal of applied physics, 78(9), 1995, pp. 5511-5514
SURFACE UV PHOTOLUMINESCENCE OF SILICON-CARBIDE CRYSTALS
Authors: DANISHEVSKI AM ROGACHEV AY CHELNOKOV VE
Citation: Am. Danishevski et al., SURFACE UV PHOTOLUMINESCENCE OF SILICON-CARBIDE CRYSTALS, Semiconductors, 28(9), 1994, pp. 884-886
AMORPHOUS HYDROGENATED SILICON-CARBIDE PRODUCED BY MAGNETRON REACTIVESPUTTERING
Authors: ROGACHEV NA KUZNETSOV AN TRAPEZNIKOVA IN TERUKOV EI CHELNOKOV VE
Citation: Na. Rogachev et al., AMORPHOUS HYDROGENATED SILICON-CARBIDE PRODUCED BY MAGNETRON REACTIVESPUTTERING, Semiconductors, 28(8), 1994, pp. 776-778
CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE
Authors: IVANOV PA KONSTANTINOV AO PANTELEEV VN SAMSONOVA TP CHELNOKOV VE
Citation: Pa. Ivanov et al., CHARGE PROPERTIES OF AN AL-SIO2-N-6H-SIC((0001)SI) MOS STRUCTURE, Semiconductors, 28(7), 1994, pp. 668-672
DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM
Authors: ANDREEV AN IVANOV PA STRELCHUK AM SAVKINA NS CHELNOKOV VE SHAPOSHNIKOV IR
Citation: An. Andreev et al., DYNISTOR BASED ON EPITAXIAL SIC-6H LAYERS GROWN BY SUBLIMATION IN AN OPEN GROWTH SYSTEM, Semiconductors, 28(7), 1994, pp. 679-679
OUTLOOK FOR THE DEVELOPMENT OF SUBLIMATION EPITAXY OF SILICON-CARBIDE
Authors: ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., OUTLOOK FOR THE DEVELOPMENT OF SUBLIMATION EPITAXY OF SILICON-CARBIDE, Semiconductors, 28(7), 1994, pp. 700-701
EPITAXIAL-FILMS AND P-N-JUNCTIONS GROWN BY A SUBLIMATION METHOD IN A SYSTEM WITH ELECTRON HEATING
Authors: ANIKIN MM LEBEDEV AA RASTEGAEVA MG STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., EPITAXIAL-FILMS AND P-N-JUNCTIONS GROWN BY A SUBLIMATION METHOD IN A SYSTEM WITH ELECTRON HEATING, Semiconductors, 28(7), 1994, pp. 702-703
SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS
Authors: ANDREEV AN SNEGOV FM STRELCHUK AM CHELNOKOV VE
Citation: An. Andreev et al., SILICON-CARBIDE THYRISTORS - CERTAIN FEATURES OF THE DEVICES AND ESTIMATE OF THEIR POSSIBLE PARAMETERS, Semiconductors, 28(7), 1994, pp. 730-732
METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM
Authors: ANDREEV AN ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., METHOD FOR PURIFYING A SILICON-CARBIDE SURFACE IN HIGH-VACUUM, Semiconductors, 28(6), 1994, pp. 577-579
RELATIONSHIP BETWEEN DEFECT LUMINESCENCE IN 6H-SIC AND DEEP-LEVEL CENTERS
Authors: ANDREEV AN ANIKIN MM LEBEDEV AA POLETAEV NK STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., RELATIONSHIP BETWEEN DEFECT LUMINESCENCE IN 6H-SIC AND DEEP-LEVEL CENTERS, Semiconductors, 28(5), 1994, pp. 430-435
EFFECT OF VARIOUS PROCESSING METHODS ON THE STATE OF A 6H-SIC(000(1)OVERBAR) SURFACE
Authors: ANDREEV AN ANIKIN MM SYRKIN AL CHELNOKOV VE
Citation: An. Andreev et al., EFFECT OF VARIOUS PROCESSING METHODS ON THE STATE OF A 6H-SIC(000(1)OVERBAR) SURFACE, Semiconductors, 28(4), 1994, pp. 377-380
SHIFT OF THE ELECTROLUMINESCENCE PEAK IN 6H-SIC-BASED DIODES WITH THEFORWARD CURRENT-DENSITY
Authors: ANIKIN MM KUZNETSOV NI LEBEDEV AA POLETAEV NE STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., SHIFT OF THE ELECTROLUMINESCENCE PEAK IN 6H-SIC-BASED DIODES WITH THEFORWARD CURRENT-DENSITY, Semiconductors, 28(3), 1994, pp. 270-273
DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD
Authors: ANIKIN MM KUZNETSOV NI LEBEDEV AA SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., DEEP-CENTER CURRENT SPECTROSCOPY IN P-N STRUCTURES BASED ON 6H-SIC WITH AN INTERNAL FIELD, Semiconductors, 28(3), 1994, pp. 278-280
DEEP CENTERS AND BLUE-GREEN ELECTROLUMINESCENCE OF 4H-SIC
Authors: ANIKIN MM LEBEDEV AA POLETAEV NK STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., DEEP CENTERS AND BLUE-GREEN ELECTROLUMINESCENCE OF 4H-SIC, Semiconductors, 28(3), 1994, pp. 288-291
TEMPERATURE AND CURRENT DEPENDENCE OF THE INTENSITY OF THE EDGE INJECTION ELECTROLUMINESCENCE OF SIC P-N STRUCTURES
Authors: ANIKIN MM STRELCHUK AM SYRKIN AL CHELNOKOV VE CHERENKOV AE
Citation: Mm. Anikin et al., TEMPERATURE AND CURRENT DEPENDENCE OF THE INTENSITY OF THE EDGE INJECTION ELECTROLUMINESCENCE OF SIC P-N STRUCTURES, Semiconductors, 28(2), 1994, pp. 171-174
A MODEL OF DENSITY-OF-STATES IN AMORPHOUS SI, C AND SIC FROM TIME-OF-FLIGHT MEASUREMENT
Authors: KONKOV OI TERUKOV EI TRAPEZNIKOVA IN CHELNOKOV VE
Citation: Oi. Konkov et al., A MODEL OF DENSITY-OF-STATES IN AMORPHOUS SI, C AND SIC FROM TIME-OF-FLIGHT MEASUREMENT, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1356-1359
MEASUREMENT OF ELECTROPHYSICAL PROPERTIES OF SILICON-CARBIDE EPITAXIAL-FILMS
Authors: LEBEDEV AA CHELNOKOV VE
Citation: Aa. Lebedev et Ve. Chelnokov, MEASUREMENT OF ELECTROPHYSICAL PROPERTIES OF SILICON-CARBIDE EPITAXIAL-FILMS, DIAMOND AND RELATED MATERIALS, 3(11-12), 1994, pp. 1393-1397
CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING
Authors: ROGACHEV NA KUZNETSOV AN TERUKOV EI LEBEDEV AA CHELNOKOV VE
Citation: Na. Rogachev et al., CHARACTERISTICS OF THE GROWTH OF SILICON- CARBIDE EPITAXIAL LAYERS FROM GAS-PHASE PRODUCED BY MAGNETOTRON REACTIVE SPUTTERING, Pis'ma v Zurnal tehniceskoj fiziki, 20(7), 1994, pp. 51-54
OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE
Authors: ANDREEV AN BABANIN AI KUZNETSOV AN RASTEGAEVA MG TERUKOV EI CHELNOKOV VE SHCHEGLOV MP
Citation: An. Andreev et al., OHMIC CONTACTS TO SIC-6H OF N-TYPE CONDUC TIVITY BASED SIC THIN-FILMSDEPOSITED BY THE MAGNETOTRON SPUTTERING TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 20(18), 1994, pp. 11-15
SIC FIELD TRANSISTOR WITH LOW-THRESHOLD P RESSURE
Authors: ANIKIN MM LEBEDEV AA RASSTEGAEVA MG SAVKINA NS STRELCHUK AM SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., SIC FIELD TRANSISTOR WITH LOW-THRESHOLD P RESSURE, Pis'ma v Zurnal tehniceskoj fiziki, 20(10), 1994, pp. 16-19
METAL-OXIDE-SEMICONDUCTOR CAPACITOR FORMED FROM THERMALLY OXIDIZED N-TYPE 6H-SIC WITH THE (000(1)OVER-BAR)C ORIENTATION
Authors: IVANOV PA PANTELEEV VN SAMSONOVA TP SUVOROV AV CHELNOKOV VE
Citation: Pa. Ivanov et al., METAL-OXIDE-SEMICONDUCTOR CAPACITOR FORMED FROM THERMALLY OXIDIZED N-TYPE 6H-SIC WITH THE (000(1)OVER-BAR)C ORIENTATION, Semiconductors, 27(7), 1993, pp. 631-635
EXPERIMENTAL FIELD-EFFECT TRANSISTOR BASED ON A 4H SILICON-CARBIDE POLYMORPH
Authors: ANIKIN MM IVANOV PA RASTEGAEV VP SAVKINA NS SYRKIN AL CHELNOKOV VE
Citation: Mm. Anikin et al., EXPERIMENTAL FIELD-EFFECT TRANSISTOR BASED ON A 4H SILICON-CARBIDE POLYMORPH, Semiconductors, 27(1), 1993, pp. 53-56
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