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Results: 1-25/26
Authors:
SUGIHARTO DS
YANG CY
LE H
CHUNG JE
Citation: Ds. Sugiharto et al., BEATING THE HEAT, IEEE circuits and devices magazine, 14(5), 1998, pp. 43-51
Authors:
STINE BE
BONING DS
CHUNG JE
CIPLICKAS DJ
KIBARIAN JK
Citation: Be. Stine et al., SIMULATING THE IMPACT OF PATTERN-DEPENDENT POLY-CD VARIATION ON CIRCUIT PERFORMANCE, IEEE transactions on semiconductor manufacturing, 11(4), 1998, pp. 552-556
Authors:
STINE BE
OUMA DO
DIVECHA RR
BONING DS
CHUNG JE
HETHERINGTON DL
HARWOOD CR
NAKAGAWA OS
OH SY
Citation: Be. Stine et al., RAPID CHARACTERIZATION AND MODELING OF PATTERN-DEPENDENT VARIATION INCHEMICAL-MECHANICAL POLISHING, IEEE transactions on semiconductor manufacturing, 11(1), 1998, pp. 129-140
Authors:
CHUNG JE
YOKOYAMA M
AOYAGI T
SAKURAI Y
OKANO T
Citation: Je. Chung et al., EFFECT OF MOLECULAR ARCHITECTURE OF HYDROPHOBICALLY-MODIFIED POLY(N-ISOPROPYLACRYLAMIDE) ON THE FORMATION OF THERMORESPONSIVE CORE-SHELL MICELLAR DRUG CARRIERS, Journal of controlled release, 53(1-3), 1998, pp. 119-130
Authors:
STINE BE
BONING DS
CHUNG JE
CAMILLETTI L
KRUPPA F
EQUI ER
LOH W
PRASAD S
MUTHUKRISHNAN M
TOWERY D
BERMAN M
KAPOOR A
Citation: Be. Stine et al., THE PHYSICAL AND ELECTRICAL EFFECTS OF METAL-FILL PATTERNING PRACTICES FOR OXIDE CHEMICAL-MECHANICAL POLISHING PROCESSES, I.E.E.E. transactions on electron devices, 45(3), 1998, pp. 665-679
Authors:
DIVECHA RR
STINE BE
OUMA DO
CHANG EC
BONING DS
CHUNG JE
NAKAGAWA OS
AOKI H
RAY G
BRADBURY D
OH SY
Citation: Rr. Divecha et al., A NOVEL STATISTICAL METROLOGY FRAMEWORK FOR IDENTIFYING SOURCES OF VARIATION IN OXIDE CHEMICAL-MECHANICAL POLISHING, Journal of the Electrochemical Society, 145(3), 1998, pp. 1052-1059
Authors:
KANG HG
JANG S
CHUNG JE
CHO YG
AN G
Citation: Hg. Kang et al., CHARACTERIZATION OF 2 RICE MADS BOX GENES THAT CONTROL FLOWERING TIME, Molecules and cells, 7(4), 1997, pp. 559-566
Authors:
STINE BE
BONING DS
CHUNG JE
Citation: Be. Stine et al., ANALYSIS AND DECOMPOSITION OF SPATIAL VARIATION IN INTEGRATED-CIRCUITPROCESSES AND DEVICES, IEEE transactions on semiconductor manufacturing, 10(1), 1997, pp. 24-41
Authors:
KIM SWA
MENBERU B
LE HXP
JIANG WJ
CHUNG JE
Citation: Swa. Kim et al., AN IMPROVED NMOS AC HOT-CARRIER LIFETIME PREDICTION ALGORITHM-BASED ON THE DOMINANT DEGRADATION ASYMPTOTE, I.E.E.E. transactions on electron devices, 44(4), 1997, pp. 651-658
Authors:
CHUNG JE
Citation: Je. Chung, REFINING THE DEFINITION OF AN ADVISORY-COMMITTEE UNDER FACA - WHY THECLINTON LEGAL EXPENSE TRUST-FUND IS OUTSIDE THE SCOPE, The George Washington law review, 65(4-5), 1997, pp. 786-791
Authors:
WEI HF
CHUNG JE
ANNAMALAI NK
Citation: Hf. Wei et al., BURIED-OXIDE CHARGE TRAPPING INDUCED PERFORMANCE DEGRADATION IN FULLY-DEPLETED ULTRA-THIN SOI P-MOSFETS, I.E.E.E. transactions on electron devices, 43(8), 1996, pp. 1200-1205
Authors:
KRSKA JHY
YOON JU
NEE JT
ROITMAN P
CAMPISI GJ
BROWN GA
CHUNG JE
Citation: Jhy. Krska et al., A MODEL FOR SIMOX BURIED-OXIDE HIGH-FIELD CONDUCTION, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1956-1964
Authors:
YU C
MAUNG TD
SPANOS CJ
BONING DS
CHUNG JE
LIU HY
CHANG KJ
BARTELINK DJ
Citation: C. Yu et al., USE OF SHORT-LOOP ELECTRICAL MEASUREMENTS FOR YIELD IMPROVEMENT, IEEE transactions on semiconductor manufacturing, 8(2), 1995, pp. 150-159
Authors:
SHERONY MJ
SU LT
CHUNG JE
ANTONIADIS DA
Citation: Mj. Sherony et al., REDUCTION OF THRESHOLD VOLTAGE SENSITIVITY IN SOI MOSFETS, IEEE electron device letters, 16(3), 1995, pp. 100-102
Authors:
CHUNG JE
HAMADA K
SAKAI H
TAKEOKA S
TSUCHIDA E
Citation: Je. Chung et al., LIGAND-EXCHANGE REACTION OF CARBONYLHEMOG LOBIN TO OXYHEMOGLOBIN IN AHEMOGLOBIN LIQUID MEMBRANE, Nippon kagaku kaishi, (2), 1995, pp. 123-127
Authors:
CHAN VH
CHUNG JE
Citation: Vh. Chan et Je. Chung, 2-STAGE HOT-CARRIER DEGRADATION AND ITS IMPACT ON SUBMICROMETER LDD NMOSFET LIFETIME PREDICTION, I.E.E.E. transactions on electron devices, 42(5), 1995, pp. 957-962
Authors:
WEI HF
CHUNG JE
KALKHORAN NM
NAMAVAR F
Citation: Hf. Wei et al., SUPPRESSION OF PARASITIC BIPOLAR EFFECTS AND OFF-STATE LEAKAGE IN FULLY-DEPLETED SOI N-MOSFETS USING GE-IMPLANTATION, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2096-2103
Authors:
CHAN VH
CHUNG JE
Citation: Vh. Chan et Je. Chung, THE IMPACT OF NMOSFET HOT-CARRIER DEGRADATION ON CMOS ANALOG SUBCIRCUIT PERFORMANCE, IEEE journal of solid-state circuits, 30(6), 1995, pp. 644-649
Authors:
SU LT
SHERONY MJ
HU H
CHUNG JE
ANTONIADIS DA
Citation: Lt. Su et al., OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS (VOL 15, PG 145, 1994), IEEE electron device letters, 15(9), 1994, pp. 363-365
Authors:
SU LT
JACOBS JB
CHUNG JE
ANTONIADIS DA
Citation: Lt. Su et al., DEEP-SUBMICROMETER CHANNEL DESIGN IN SILICON-ON-INSULATOR (SOI) MOSFETS (VOL 15, PG 183, 1994), IEEE electron device letters, 15(9), 1994, pp. 366-369
Authors:
SU LT
SHERONY MJ
HU H
CHUNG JE
ANTONIADIS DA
Citation: Lt. Su et al., OPTIMIZATION OF SERIES RESISTANCE IN SUB-0.2 MU-M SOI MOSFETS, IEEE electron device letters, 15(5), 1994, pp. 145-147
Authors:
SU LT
JACOBS JB
CHUNG JE
ANTONIADIS DA
Citation: Lt. Su et al., DEEP-SUBMICROMETER CHANNEL DESIGN IN SILICON-ON-INSULATOR (SOI) MOSFETS, IEEE electron device letters, 15(5), 1994, pp. 183-185
Authors:
HU H
JACOBS JB
CHUNG JE
ANTONIADIS DA
Citation: H. Hu et al., THE CORRELATION BETWEEN GATE CURRENT AND SUBSTRATE CURRENT IN 0.1-MU-M NMOSFETS, IEEE electron device letters, 15(10), 1994, pp. 418-420
Authors:
WEI HF
CHUNG JE
KALKHORAN NM
NAMAVAR F
ANNAMALAI NK
SHEDD WM
Citation: Hf. Wei et al., IMPROVEMENT OF RADIATION HARDNESS IN FULLY-DEPLETED SOI N-MOSFETS USING GE-IMPLANTATION, IEEE transactions on nuclear science, 41(6), 1994, pp. 2291-2296
Authors:
SHERONY MJ
SU LT
CHUNG JE
ANTONIADIS DA
Citation: Mj. Sherony et al., SOI MOSFET EFFECTIVE CHANNEL MOBILITY, I.E.E.E. transactions on electron devices, 41(2), 1994, pp. 276-278