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Results: 1-24 |
Results: 24
Raman scattering as a probing method of subsurface damage in SiC
Authors: Vicente, P David, D Camassel, J
Citation: P. Vicente et al., Raman scattering as a probing method of subsurface damage in SiC, MAT SCI E B, 80(1-3), 2001, pp. 348-351
Control of Al-implantation doping in 4H-SiC
Authors: Pernot, J Camassel, J Contreras, S Robert, JL Bluet, JM Michaud, JF Billon, T
Citation: J. Pernot et al., Control of Al-implantation doping in 4H-SiC, MAT SCI E B, 80(1-3), 2001, pp. 362-365
Growth of bulk and superlattice GaAsSb layers on InP
Authors: Giani, A Pascal-Delannoy, F Camassel, J Norman, AG
Citation: A. Giani et al., Growth of bulk and superlattice GaAsSb layers on InP, J MAT SCI L, 20(7), 2001, pp. 677-680
Growth of bulk and superlattice GaAsSb layers on InP
Authors: Giani, A Pascal-Delannoy, F Camassel, J Norman, AG
Citation: A. Giani et al., Growth of bulk and superlattice GaAsSb layers on InP, J MAT SCI L, 20(4), 2001, pp. 363-366
Raman and photoluminescence spectroscopy from N-2(+)-ion implanted and alpha-irradiated and annealed GaN/sapphire
Authors: Kunert, HW Maurice, TP Brink, DJ Prinsloo, LC Malherbe, JB Camassel, J
Citation: Hw. Kunert et al., Raman and photoluminescence spectroscopy from N-2(+)-ion implanted and alpha-irradiated and annealed GaN/sapphire, NUCL INST B, 181, 2001, pp. 286-292
Strain effect in silicon-on-insulator materials: Investigation with optical phonons - art. no. 035309
Authors: Camassel, J Falkovsky, LA Planes, N
Citation: J. Camassel et al., Strain effect in silicon-on-insulator materials: Investigation with optical phonons - art. no. 035309, PHYS REV B, 6303(3), 2001, pp. 5309
SiC materials: a semiconductor family for the next century
Authors: Camassel, J Contreras, S Robert, JL
Citation: J. Camassel et al., SiC materials: a semiconductor family for the next century, CR AC S IV, 1(1), 2000, pp. 5-21
SiC characterization techniques: Specificity of optical and electrical properties
Authors: Camassel, J Contreras, S
Citation: J. Camassel et S. Contreras, SiC characterization techniques: Specificity of optical and electrical properties, VIDE, 55(298), 2000, pp. 429
Disorder effect on optical phonons
Authors: Falkovsky, LA Camassel, J
Citation: La. Falkovsky et J. Camassel, Disorder effect on optical phonons, PHYSICA B, 284, 2000, pp. 1145-1146
Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance
Authors: Klar, PJ Vicente, PMA Gruning, H Heimbrodt, W Koch, J Hohnsdorf, F Stolz, W Camassel, J
Citation: Pj. Klar et al., Nitrogen-induced band formation in GaNxAs1-x studied by photoluminescence under hydrostatic pressure and photomodulated reflectance, HIGH PR RES, 18(1-6), 2000, pp. 29-34
Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices
Authors: Kunert, HW Malherbe, JB Brink, DJ Odendaal, RQ Prinsloo, LC Camassel, J Allegre, J Zeaiter, K Llinares, C
Citation: Hw. Kunert et al., Optical properties of as grown and ion implanted (Ar+,N-2(+),alpha) GaAs nipi doping superlattices, APPL SURF S, 166(1-4), 2000, pp. 77-81
Activation of aluminum implanted at high doses in 4H-SiC
Authors: Bluet, JM Pernot, J Camassel, J Contreras, S Robert, JL Michaud, JF Billon, T
Citation: Jm. Bluet et al., Activation of aluminum implanted at high doses in 4H-SiC, J APPL PHYS, 88(4), 2000, pp. 1971-1977
Free electron density and mobility in high-quality 4H-SiC
Authors: Pernot, J Contreras, S Camassel, J Robert, JL Zawadzki, W Neyret, E Di Cioccio, L
Citation: J. Pernot et al., Free electron density and mobility in high-quality 4H-SiC, APPL PHYS L, 77(26), 2000, pp. 4359-4361
From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy
Authors: Klar, PJ Gruning, H Heimbrodt, W Koch, J Hohnsdorf, F Stolz, W Vicente, PMA Camassel, J
Citation: Pj. Klar et al., From N isoelectronic impurities to N-induced bands in the GaNxAs1-x alloy, APPL PHYS L, 76(23), 2000, pp. 3439-3441
Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition
Authors: Neyret, E Ferro, G Juillaguet, S Bluet, JM Jaussaud, C Camassel, J
Citation: E. Neyret et al., Optical investigation of residual doping species in 6H and 4H-SIC layers grown by chemical vapor deposition, MAT SCI E B, 61-2, 1999, pp. 253-257
Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport
Authors: Camassel, J Juillaguet, S Planes, N Raymond, A Grosse, P Basset, G Faure, C Couchaud, M Bluet, JM Chourou, K Anikin, M Madar, R
Citation: J. Camassel et al., Optical assessment of purity improvement effects in bulk 6H and 4H-SiC wafers grown by physical vapor transport, MAT SCI E B, 61-2, 1999, pp. 258-264
Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition
Authors: Namavar, F Colter, PC Planes, N Fraisse, B Pernot, J Juillaguet, S Camassel, J
Citation: F. Namavar et al., Investigation of porous silicon as a new compliant substrate for 3C-SiC deposition, MAT SCI E B, 61-2, 1999, pp. 571-575
Role of SIMOX defects on the structural properties of beta-SiC/SIMOX
Authors: Ferro, G Planes, N Papaioannou, V Chaussende, D Monteil, Y Stoemenos, Y Camassel, J
Citation: G. Ferro et al., Role of SIMOX defects on the structural properties of beta-SiC/SIMOX, MAT SCI E B, 61-2, 1999, pp. 586-592
Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si
Authors: Camassel, J Vicente, P Planes, N Allegre, J Pankove, J Namavar, F
Citation: J. Camassel et al., Experimental investigation of cubic to hexagonal ratio for GaN layers deposited on 3C-SiC/Si, PHYS ST S-B, 216(1), 1999, pp. 253-257
Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN
Authors: Kunert, HW Juillaguet, S Camassel, J Malherbe, JB Odendaal, RQ Brink, DJ Prinsloo, LC
Citation: Hw. Kunert et al., Optical properties of As-grown, alpha-particle irradiated and N-2(+)-ion implaned GaN, PHYS ST S-B, 216(1), 1999, pp. 619-623
Strong and weak modes in polytypes of SiC
Authors: Fal'kovskii, LA Camassel, J
Citation: La. Fal'Kovskii et J. Camassel, Strong and weak modes in polytypes of SiC, JETP LETTER, 69(3), 1999, pp. 268-272
SOL thickness dependence of residual strain in SOI material
Authors: Camassel, J Planes, N Falkovsky, L Moller, H Eickhoff, M Krotz, G
Citation: J. Camassel et al., SOL thickness dependence of residual strain in SOI material, ELECTR LETT, 35(15), 1999, pp. 1284-1286
Electronic and structural properties of As-grown and alpha-particle irradiated GaAs doping superlattices
Authors: Kunert, HW Brink, DJ Donnadieu, A Zeaiter, K Llinares, C Allegre, J Leveque, G Camassel, J
Citation: Hw. Kunert et al., Electronic and structural properties of As-grown and alpha-particle irradiated GaAs doping superlattices, PHYS ST S-B, 210(2), 1998, pp. 699-705
Ellipsometric characterisation of ordered Ga0.5In0.5P
Authors: Alsina, F Garriga, M Alonso, MI Pascual, J Camassel, J Glew, RW
Citation: F. Alsina et al., Ellipsometric characterisation of ordered Ga0.5In0.5P, MATER SCI T, 14(12), 1998, pp. 1283-1285
Risultati: 1-24 |