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Results: 1-25 | 26-50 | 51-58
Results: 1-25/58
Laser-induced activation of p-type GaN with the second harmonics of a Nd :YAG laser
Authors: Cheng, YC Liao, CC Feng, SW Yang, CC Lin, YS Ma, KJ Chou, CC Lee, CM Chyi, JI
Citation: Yc. Cheng et al., Laser-induced activation of p-type GaN with the second harmonics of a Nd :YAG laser, JPN J A P 1, 40(4A), 2001, pp. 2143-2145
GaN electronics for high power, high temperature applications
Authors: Pearton, SJ Ren, F Zhang, AP Dang, G Cao, XA Lee, KP Cho, H Gila, BP Johnson, JW Monier, C Abernathy, CR Han, J Baca, AG Chyi, JI Lee, CM Nee, TE Chuo, CC Chu, SNG
Citation: Sj. Pearton et al., GaN electronics for high power, high temperature applications, MAT SCI E B, 82(1-3), 2001, pp. 227-231
Improvement of diodes performance with a multiple-pair buffer layer by MOCVD
Authors: Yang, CC Wu, MC Chi, GC Chuo, CC Chyi, JI
Citation: Cc. Yang et al., Improvement of diodes performance with a multiple-pair buffer layer by MOCVD, MAT SCI E B, 82(1-3), 2001, pp. 253-255
Device characteristics of the GaN/InGaN-doped channel HFETs
Authors: Hsin, YM Hsu, HT Chuo, CC Chyi, JI
Citation: Ym. Hsin et al., Device characteristics of the GaN/InGaN-doped channel HFETs, IEEE ELEC D, 22(11), 2001, pp. 501-503
Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells
Authors: Lai, CY Hsu, TM Chang, WH Tseng, KU Lee, CM Chuo, CC Chyi, JI
Citation: Cy. Lai et al., Piezoelectric field-induced quantum-confined Stark effect in InGaN/GaN multiple quantum wells, PHYS ST S-B, 228(1), 2001, pp. 77-80
Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures
Authors: Feng, SW Cheng, YC Liao, CC Chung, YY Liu, CW Yang, CC Lin, YS Ma, KJ Chyi, JI
Citation: Sw. Feng et al., Two-component photoluminescence decay in InGaN/GaN multiple quantum well structures, PHYS ST S-B, 228(1), 2001, pp. 121-124
A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement
Authors: Chang, WH Hsu, TM Huang, CC Hsu, SL Lai, CY Yeh, NT Chyi, JI
Citation: Wh. Chang et al., A carrier escape study from InAs self-assembled quantum dots by photocurrent measurement, PHYS ST S-B, 224(1), 2001, pp. 85-88
Effects of electric field and coulomb interaction on the interband transitions of InAs self-assembled quantum dots: A study by modulation reflectancespectroscopy
Authors: Chang, WH Hsu, TM Huang, CC Yeh, NT Chyi, JI
Citation: Wh. Chang et al., Effects of electric field and coulomb interaction on the interband transitions of InAs self-assembled quantum dots: A study by modulation reflectancespectroscopy, PHYS ST S-B, 224(1), 2001, pp. 89-92
Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Zhang, AP Ren, F Pearton, SJ Chyi, JI Nee, TE Chou, CC Lee, CM
Citation: Ay. Polyakov et al., Electrical properties and spectra of deep centers in GaN p-i-n rectifier structures, J ELEC MAT, 30(3), 2001, pp. 147-155
Charging of embedded InAs self-assembled quantum dots by space-charge techniques - art. no. 125315
Authors: Chang, WH Chen, WY Cheng, MC Lai, CY Hsu, TM Yeh, NT Chyi, JI
Citation: Wh. Chang et al., Charging of embedded InAs self-assembled quantum dots by space-charge techniques - art. no. 125315, PHYS REV B, 6412(12), 2001, pp. 5315
Schottky rectifiers fabricated on free-standing GaN substrates
Authors: Johnson, JW LaRoch, JR Ren, F Gila, BP Overberg, ME Abernathy, CR Chyi, JI Chou, CC Nee, TE Lee, CM Lee, KP Park, SS Park, YJ Pearton, SJ
Citation: Jw. Johnson et al., Schottky rectifiers fabricated on free-standing GaN substrates, SOL ST ELEC, 45(3), 2001, pp. 405-410
Improved electroluminescence of InAs quantum dots with strain reducing layer
Authors: Yeh, NT Nee, TE Chyi, JI Chia, CT Hsu, TM Huang, CC
Citation: Nt. Yeh et al., Improved electroluminescence of InAs quantum dots with strain reducing layer, J CRYST GR, 227, 2001, pp. 1044-1048
Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes
Authors: Lee, CM Chuo, CC Dai, JF Zheng, XF Chyi, JI
Citation: Cm. Lee et al., Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes, J APPL PHYS, 89(11), 2001, pp. 6554-6556
Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures
Authors: Chen, CC Hsieh, KL Chi, GC Chuo, CC Chyi, JI Chang, CA
Citation: Cc. Chen et al., Effect of thermal annealing on high indium content InGaN/GaN single quantum well structures, J APPL PHYS, 89(10), 2001, pp. 5465-5468
Comparison of GaN p-i-n and Schottky rectifier performance
Authors: Zhang, APP Dang, GT Ren, F Cho, H Lee, KP Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC
Citation: App. Zhang et al., Comparison of GaN p-i-n and Schottky rectifier performance, IEEE DEVICE, 48(3), 2001, pp. 407-411
A comparative study of the passivation films on AlGaAs/GaAs heterojunctiondiodes and bipolar transistors
Authors: Hwang, HP Cheng, YS Shieh, JL Chyi, JI
Citation: Hp. Hwang et al., A comparative study of the passivation films on AlGaAs/GaAs heterojunctiondiodes and bipolar transistors, IEEE DEVICE, 48(2), 2001, pp. 185-189
SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors
Authors: Johnson, JW Gila, BP Luo, B Lee, KP Abernathy, CR Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC Ren, F
Citation: Jw. Johnson et al., SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors, J ELCHEM SO, 148(6), 2001, pp. G303-G306
Vertical and lateral GaN rectifiers on free-standing GaN substrates
Authors: Zhang, AP Johnson, JW Luo, B Ren, F Pearton, SJ Park, SS Park, YJ Chyi, JI
Citation: Ap. Zhang et al., Vertical and lateral GaN rectifiers on free-standing GaN substrates, APPL PHYS L, 79(10), 2001, pp. 1555-1557
Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells
Authors: Chuo, CC Lee, CM Chyi, JI
Citation: Cc. Chuo et al., Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells, APPL PHYS L, 78(3), 2001, pp. 314-316
Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots
Authors: Hsu, TM Chang, WH Huang, CC Yeh, NT Chyi, JI
Citation: Tm. Hsu et al., Quantum-confined Stark shift in electroreflectance of InAs/InxGa1-xAs self-assembled quantum dots, APPL PHYS L, 78(12), 2001, pp. 1760-1762
Properties and effects of hydrogen in GaN
Authors: Pearton, SJ Cho, H Ren, F Chyi, JI Han, J Wilson, RG
Citation: Sj. Pearton et al., Properties and effects of hydrogen in GaN, MRS I J N S, 5, 2000, pp. NIL_465-NIL_474
Processing and device performance of GaN power rectifiers
Authors: Zhang, AP Dang, GT Cao, XA Cho, H Ren, F Han, J Chyi, JI Lee, CM Nee, TE Chuo, CC Chi, GC Chu, SNG Wilson, RG Pearton, SJ
Citation: Ap. Zhang et al., Processing and device performance of GaN power rectifiers, MRS I J N S, 5, 2000, pp. NIL_721-NIL_726
Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes
Authors: Hong, M Anselm, KA Kwo, J Ng, HM Baillargeon, JN Kortan, AR Mannaerts, JP Cho, AY Lee, CM Chyi, JI Lay, TS
Citation: M. Hong et al., Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes, J VAC SCI B, 18(3), 2000, pp. 1453-1456
Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region
Authors: Yeh, NT Lee, JM Nee, TE Chyi, JI
Citation: Nt. Yeh et al., Self-assembled In0.5Ga0.5As quantum-dot lasers with doped active region, IEEE PHOTON, 12(9), 2000, pp. 1123-1125
MBE growth and characterisation of InGaAs quantum dot lasers
Authors: Chyi, JI
Citation: Ji. Chyi, MBE growth and characterisation of InGaAs quantum dot lasers, MAT SCI E B, 75(2-3), 2000, pp. 121-125
Risultati: 1-25 | 26-50 | 51-58