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Results: 1-10 |
Results: 10
SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION
Authors: LORFEVRE E SUDRE C DACHS C DETCHEVERRY C PALAU JM GASIOT J CALVET MC GARNIER J ECOFFET R
Citation: E. Lorfevre et al., SEB OCCURRENCE IN A VIP - INFLUENCE OF THE EPI-SUBSTRATE JUNCTION, IEEE transactions on nuclear science, 45(3), 1998, pp. 1624-1627
SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY
Authors: DETCHEVERRY C DACHS C LORFEVRE E SUDRE C BRUGUIER G PALAU JM GASIOT J ECOFFET R
Citation: C. Detcheverry et al., SEU CRITICAL CHARGE AND SENSITIVE AREA IN A SUBMICRON CMOS TECHNOLOGY, IEEE transactions on nuclear science, 44(6), 1997, pp. 2266-2273
HEAVY-ION-INDUCED FAILURES IN A POWER IGBT
Authors: LORFEVRE E DACHS C DETCHEVERRY C PALAU JM GASIOT J ROUBAUD F CALVET MC ECOFFET R
Citation: E. Lorfevre et al., HEAVY-ION-INDUCED FAILURES IN A POWER IGBT, IEEE transactions on nuclear science, 44(6), 1997, pp. 2353-2357
STATIC CHARACTERISTIC AND TRANSIENT-BEHAVIOR OF A N-X RAY(PNN+ TRANSISTOR IRRADIATED WITH FLASH)
Authors: SUDRE C DACHS C PELANCHON F PALAU JN GASIOT J
Citation: C. Sudre et al., STATIC CHARACTERISTIC AND TRANSIENT-BEHAVIOR OF A N-X RAY(PNN+ TRANSISTOR IRRADIATED WITH FLASH), Radiation effects and defects in solids, 139(4), 1996, pp. 229-239
SEGR AND SEB IN N-CHANNEL POWER MOSFETS
Authors: ALLENSPACH M DACHS C JOHNSON GH SCHRIMPF RD LORFEVRE E PALAU JM BREWS JR GALLOWAY KF TITUS JL WHEATLEY CF
Citation: M. Allenspach et al., SEGR AND SEB IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2927-2931
A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS
Authors: JOHNSON GH GALLOWAY KF SCHRIMPF RD TITUS JL WHEATLEY CF ALLENSPACH M DACHS C
Citation: Gh. Johnson et al., A PHYSICAL INTERPRETATION FOR THE SINGLE-EVENT-GATE-RUPTURE CROSS-SECTION OF N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2932-2937
A REVIEW OF THE TECHNIQUES USED FOR MODELING SINGLE-EVENT EFFECTS IN POWER MOSFETS
Authors: JOHNSON GH PALAU JM DACHS C GALLOWAY KF SCHRIMPF RD
Citation: Gh. Johnson et al., A REVIEW OF THE TECHNIQUES USED FOR MODELING SINGLE-EVENT EFFECTS IN POWER MOSFETS, IEEE transactions on nuclear science, 43(2), 1996, pp. 546-560
SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT
Authors: DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P CALVET MC CALVEL P
Citation: C. Dachs et al., SIMULATION AIDED HARDENING OF N-CHANNEL POWER MOSFETS TO PREVENT SINGLE EVENT BURNOUT, IEEE transactions on nuclear science, 42(6), 1995, pp. 1935-1939
EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS
Authors: DACHS C ROUBAUD F PALAU JM BRUGUIER G GASIOT J TASTET P
Citation: C. Dachs et al., EVIDENCE OF THE IONS IMPACT POSITION EFFECT ON SEB IN N-CHANNEL POWERMOSFETS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2167-2171
EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS
Authors: ROUBAUD F DACHS C PALAU JM GASIOT J TASTET P
Citation: F. Roubaud et al., EXPERIMENTAL AND 2D SIMULATION STUDY OF THE SINGLE-EVENT BURNOUT IN N-CHANNEL POWER MOSFETS, IEEE transactions on nuclear science, 40(6), 1993, pp. 1952-1958
Risultati: 1-10 |