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Citation: Jb. Cui et Rc. Fang, CHARACTERIZATION OF THE DIAMOND GROWTH-PROCESS USING OPTICAL-EMISSIONSPECTROSCOPY, Journal of applied physics, 81(6), 1997, pp. 2856-2862
Authors:
BAN DY
YANG FY
FANG RC
XU SH
XU PS
MENG XX
Citation: Dy. Ban et al., STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 39(6), 1996, pp. 637-646
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Authors:
ZHANG XY
XU PS
XU SH
PAN HB
LU ED
JIN XF
FANG RC
Citation: Xy. Zhang et al., SYNCHROTRON-RADIATION STUDIES ON METAL SEMICONDUCTOR INTERFACE ELECTRONIC-STRUCTURES/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 155-160
Authors:
YANG FY
BAN DY
FANG RC
XU SH
XU PS
YUAN SX
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Citation: Jb. Cui et Rc. Fang, EMISSION-SPECTROSCOPY FOR HOT-FILAMENT DIAMOND GROWTH-PROCESS WITH POSITIVE SUBSTRATE BIASING, Chinese Physics Letters, 13(3), 1996, pp. 192-195
Citation: Jb. Cui et Rc. Fang, THE INFLUENCE OF BIAS ON GASEOUS COMPOSITION AND DIAMOND GROWTH IN A HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of physics. D, Applied physics, 29(11), 1996, pp. 2759-2762
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