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Results: 1-25/27
Authors:
SHANG NG
FANG RC
HAN S
LIAO Y
CUI JB
Citation: Ng. Shang et al., TRANSVERSE BIAS-ENHANCED NUCLEATION OF DIAMOND IN HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, MATERIALS RESEARCH INNOVATIONS, 2(2), 1998, pp. 79-82
Authors:
BAN DY
XUE JG
FANG RC
XU SH
LU ED
XU PS
Citation: Dy. Ban et al., MEASUREMENTS AND CALCULATIONS OF THE VALENCE-BAND OFFSETS OF SIOX ZNS(111) AND SIOX/CDTE(111) HETEROJUNCTIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 989-995
Authors:
WANG GZ
LI P
MA YR
LI FQ
FANG RC
Citation: Gz. Wang et al., ADSORPTION AND ELECTRODEPOSITION OF METAL -IONS ON THE SURFACE OF POROUS SILICON, Huaxue xuebao, 56(2), 1998, pp. 171-177
Authors:
LI P
MA YR
WANG GZ
FANG RC
Citation: P. Li et al., MONOEXPONENTIAL MICROSECOND DECAY OF BLUE PHOTOLUMINESCENCE IN AGED POROUS SILICON PREPARED WITH AR+ 488 NM, Chinese Physics Letters, 15(5), 1998, pp. 382-384
DISCHARGE INDUCED ENHANCEMENT OF DIAMOND NUCLEATION ON SI VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
Authors:
CUI JB
SHANG NG
FANG RC
Citation: Jb. Cui et al., DISCHARGE INDUCED ENHANCEMENT OF DIAMOND NUCLEATION ON SI VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(11), 1998, pp. 6072-6075
Authors:
BAN DY
FANG RC
XUE JG
LU ED
XU PS
Citation: Dy. Ban et al., EFFECT OF GROWTH TEMPERATURE ON THE BAND LINEUP OF GE CDTE(111) POLARINTERFACES/, Chinese Physics Letters, 14(8), 1997, pp. 609-612
Authors:
WANG GZ
LI P
MA YR
FANG RC
Citation: Gz. Wang et al., JUNCTION CURRENT DRIFT EFFECT OF THE CU POROUS SI DEVICE PREPARED BY ELECTRODEPOSITION, Chinese Physics Letters, 14(2), 1997, pp. 124-127
Authors:
ZHANG HF
WANG CY
FANG RC
BAN DY
LI YP
Citation: Hf. Zhang et al., INTERFACE ELECTRONIC-STRUCTURE OF GE ZNSE(111)/, Chinese Physics Letters, 14(2), 1997, pp. 128-130
Authors:
GU CZ
JIN ZS
LU XY
ZOU GT
ZHANG JF
FANG RC
Citation: Cz. Gu et al., THE DEPOSITION OF DIAMOND FILM WITH HIGH THERMAL-CONDUCTIVITY, Thin solid films, 311(1-2), 1997, pp. 124-127
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, CHARACTERIZATION OF THE DIAMOND GROWTH-PROCESS USING OPTICAL-EMISSIONSPECTROSCOPY, Journal of applied physics, 81(6), 1997, pp. 2856-2862
STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/
Authors:
BAN DY
YANG FY
FANG RC
XU SH
XU PS
MENG XX
Citation: Dy. Ban et al., STUDY OF VALENCE-BAND OFFSETS OF GE ZNS(111) HETEROJUNCTIONS BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Science in China. Series A, Mathematics, Physics, Astronomy & Technological Sciences, 39(6), 1996, pp. 637-646
Authors:
BAN DY
YANG FY
FANG RC
XU SH
XU PS
Citation: Dy. Ban et al., INTERFACE FORMATION OF GE ZNSE(100) AND GE/ZNS(111) HETEROJUNCTIONS STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Acta physica Sinica, 5(8), 1996, pp. 590-600
Authors:
ZHANG XY
XU PS
XU SH
PAN HB
LU ED
JIN XF
FANG RC
Citation: Xy. Zhang et al., SYNCHROTRON-RADIATION STUDIES ON METAL SEMICONDUCTOR INTERFACE ELECTRONIC-STRUCTURES/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 155-160
Authors:
YANG FY
BAN DY
FANG RC
XU SH
XU PS
YUAN SX
Citation: Fy. Yang et al., VALENCE-BAND OFFSET AND INTERFACE FORMATION OF GE ZNSE(100) STUDIED BY SYNCHROTRON-RADIATION PHOTOEMISSION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 193-196
Authors:
BAN DY
YANG FY
FANG RC
XU SH
XU PS
Citation: Dy. Ban et al., SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY OF GE ZNS(111) HETEROJUNCTION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 197-200
Authors:
XU PS
YANG FY
XU SH
LU ED
YU XJ
FANG RC
Citation: Ps. Xu et al., ELECTRONIC-STRUCTURE OF THE MN CD0.96ZN0.04TE(111) INTERFACE STUDIED BY SYNCHROTRON-RADIATION/, Journal of electron spectroscopy and related phenomena, 80, 1996, pp. 217-220
Authors:
GU CZ
JIN ZS
WANG CL
LU XY
ZOU GT
ZHANG JF
FANG RC
Citation: Cz. Gu et al., FACTORS INFLUENCING THERMAL-CONDUCTIVITY IN DIAMOND FILM, Chinese Physics Letters, 13(9), 1996, pp. 700-702
Authors:
GU CZ
JIN ZS
LU XY
ZOU GT
LU JX
YAO D
ZHANG JF
FANG RC
Citation: Cz. Gu et al., THERMAL-CONDUCTIVITY OF DIAMOND-BASED SILICON-ON-INSULATOR STRUCTURES, Chinese Physics Letters, 13(8), 1996, pp. 610-612
Authors:
CHEN H
ZHANG JF
CUI JB
FANG RC
Citation: H. Chen et al., DEPOSITION OF DIAMOND FILM ON ALUMINUM NITRIDE CERAMICS AND THE STUDYOF THEIR THERMAL CONDUCTANCE, Chinese Physics Letters, 13(8), 1996, pp. 625-628
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, EMISSION-SPECTROSCOPY FOR HOT-FILAMENT DIAMOND GROWTH-PROCESS WITH POSITIVE SUBSTRATE BIASING, Chinese Physics Letters, 13(3), 1996, pp. 192-195
Authors:
CUI JB
MA YR
ZHANG JF
CHEN H
FANG RC
Citation: Jb. Cui et al., GROWTH AND CHARACTERIZATION OF DIAMOND FILM ON ALUMINUM NITRIDE, Materials research bulletin, 31(7), 1996, pp. 781-785
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, THE INFLUENCE OF BIAS ON GASEOUS COMPOSITION AND DIAMOND GROWTH IN A HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of physics. D, Applied physics, 29(11), 1996, pp. 2759-2762
Authors:
LI P
LI QS
MA YR
FANG RC
Citation: P. Li et al., PHOTOLUMINESCENCE AND ITS DECAY OF THE DYE POROUS-SILICON COMPOSITE SYSTEM/, Journal of applied physics, 80(1), 1996, pp. 490-493
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, EVIDENCE OF THE ROLE OF POSITIVE BIAS IN DIAMOND GROWTH BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(23), 1996, pp. 3507-3509
Authors:
CUI JB
MA YR
FANG RC
Citation: Jb. Cui et al., SPECIES CHARACTERIZATION FOR A DIRECT-CURRENT-BIASED HOT-FILAMENT GROWTH OF DIAMOND USING SPATIAL RESOLVED OPTICAL-EMISSION SPECTROSCOPY, Applied physics letters, 69(21), 1996, pp. 3170-3172