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Results: 1-25 | 26-50 | 51-58
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Authors: WU KH FANG YK HO JJ HSIEH WT CHUANG WH HWANG JD
Citation: Kh. Wu et al., A HIGH OPTICAL-GAIN BETA-SIC BULK-BARRIER PHOTOTRANSISTOR FOR HIGH-TEMPERATURE APPLICATIONS, IEEE photonics technology letters, 10(11), 1998, pp. 1611-1613

Authors: HO JJ FANG YK WU KH HSIEH WT CHEN CH CHEN GS JU MS LIN JJ HWANG SB
Citation: Jj. Ho et al., HIGH-SENSITIVITY ETHANOL GAS SENSOR INTEGRATED WITH A SOLID-STATE HEATER AND THERMAL ISOLATION IMPROVEMENT STRUCTURE FOR LEGAL DRINK-DRIVE LIMIT DETECTING, Sensors and actuators. B, Chemical, 50(3), 1998, pp. 227-233

Authors: WU KH FANG YK HO JJ HSIEH WT CHEN TJ
Citation: Kh. Wu et al., NOVEL SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR USE AS SWITCH WITH HIGH ON/OFF CURRENT RATIO AND LOW-POWER DISSIPATION/, IEEE electron device letters, 19(8), 1998, pp. 294-296

Authors: HO JJ FANG YK WU KH HSIEH WT CHU CW HUANG CR JU MS CHANG CP
Citation: Jj. Ho et al., A HIGH-SENSITIVITY LEAD-TITANATE (PBTIO3) PYROELECTRIC THIN-FILM INFRARED-SENSOR WITH TEMPERATURE ISOLATION IMPROVEMENT STRUCTURE, IEEE electron device letters, 19(6), 1998, pp. 189-191

Authors: YAUNG DN FANG YK HWANG KC LEE KY WU KH HO JJ CHEN CY WANG YJ LIANG MS LEE JY WUU SG
Citation: Dn. Yaung et al., NARROW WIDTH EFFECTS OF BOTTOM-GATE POLYSILICON THIN-FILM TRANSISTORS, IEEE electron device letters, 19(11), 1998, pp. 429-431

Authors: HO JJ FANG YK WU KH HSIEH WT HUANG SC CHEN GS JU MS LIN JJ
Citation: Jj. Ho et al., HIGH-SPEED AMORPHOUS-SILICON GERMANIUM INFRARED-SENSORS PREPARED ON CRYSTALLINE SILICON SUBSTRATES, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2085-2088

Authors: WU KH FANG YK HSIEH WT HO JJ LIN WJ HWANG JD
Citation: Kh. Wu et al., HIGH-RESPONSIVITY POROUS-SIC THIN-FILM PN JUNCTION PHOTODETECTOR, Electronics Letters, 34(23), 1998, pp. 2243-2244

Authors: WU KH FANG YK HO JJ HSIEH WT CHEN TJ
Citation: Kh. Wu et al., SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR HIGH-TEMPERATURE APPLICATIONS/, Applied physics letters, 72(23), 1998, pp. 3017-3019

Authors: WU KH FANG YK ZHOU JH HO JJ
Citation: Kh. Wu et al., BETA-SIC PHOTODIODES PREPARED ON SILICON SUBSTRATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(8), 1997, pp. 5151-5155

Authors: LEE KY FANG YK CHEN CW YAUNG DN WUU KH HO JJ LIANG MS WUU SG
Citation: Ky. Lee et al., THE IMPACTS OF BACK-END HIGH-TEMPERATURE THERMAL TREATMENTS ON THE CHARACTERISTICS AND GATE OXIDE RELIABILITY OF THIN-FILM-TRANSISTOR IN ULTRA LARGE-SCALE INTEGRATED-CIRCUIT PROCESS, JPN J A P 1, 36(5A), 1997, pp. 2628-2632

Authors: LEE KY FANG YK CHENG CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., IMPACT OF HYDROGENATING PLASMA-INDUCED OXIDE CHARGING EFFECTS ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS, JPN J A P 1, 36(3A), 1997, pp. 1025-1029

Authors: LEE KY FANG YK CHEN CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., THE ANOMALOUS BEHAVIOR OF HYDROGENATED UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS UNDER ELECTRIC STRESS/, IEEE electron device letters, 18(8), 1997, pp. 382-384

Authors: LEE KY FANG YK CHEN CW LIANG MS HSIEH JC
Citation: Ky. Lee et al., A NOVEL STACK STRUCTURE TO IMPROVE THE DEGRADATION OF W-POLYCIDE GATED MOS DEVICE WITH UNDOPED A-SI HEAVILY-DOPED POLY-SI MULTILAYER, IEEE electron device letters, 18(5), 1997, pp. 181-183

Authors: LEE KY FANG YK CHEN CW HUANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., THE ELECTROSTATIC CHARGING DAMAGE ON THE CHARACTERISTICS AND RELIABILITY OF POLYSILICON THIN-FILM TRANSISTORS DURING PLASMA HYDROGENATION, IEEE electron device letters, 18(5), 1997, pp. 187-189

Authors: LEE KY FANG YK CHEN CW HWANG KC LIANG MS WUU SG
Citation: Ky. Lee et al., TO SUPPRESS UV DAMAGE ON THE SUBTHRESHOLD CHARACTERISTIC OF TFT DURING HYDROGENATION FOR HIGH-DENSITY TFT SRAM, IEEE electron device letters, 18(1), 1997, pp. 4-6

Authors: LEE KY FANG YK CHEN CW LIANG MS WUU SG
Citation: Ky. Lee et al., HIGH-PERFORMANCE POLYSILICON THIN-FILM TRANSISTORS BY H2O PLASMA HYDROGENATION, Thin solid films, 305(1-2), 1997, pp. 327-329

Authors: LEE KY FANG YK CHEN CW LIANG MS WUU SG
Citation: Ky. Lee et al., RAPID THERMAL ANNEALING ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS IN PRACTICAL TFT SRAM PROCESS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1561-1562

Authors: CHEN FY FANG YK SHU CY CHEN JR
Citation: Fy. Chen et al., NUMERICAL-ANALYSIS OF A PBTIO3 FERROELECTRIC THIN-FILM INFRARED OPTICAL DIODE, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 937-942

Authors: HWANG JD FANG YK WU KH CHOU SM
Citation: Jd. Hwang et al., IMPROVING BREAKDOWN VOLTAGE OF SIC SI HETEROJUNCTION WITH GRADED STRUCTURE BY RAPID THERMAL CVD TECHNOLOGY/, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2029-2031

Authors: FANG YK LEE KH WU KH TSAO CY
Citation: Yk. Fang et al., AN INTEGRATED PIN MISS OEIC FOR HIGH-CURRENT PHOTORECEIVER APPLICATIONS/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 34-38

Authors: CHEN FY FANG YK HSU CY CHEN JR
Citation: Fy. Chen et al., TIME RESPONSE ANALYSIS OF A PYROELECTRIC DETECTOR, Ferroelectrics, 200(1-4), 1997, pp. 257-268

Authors: WU KH FANG YK HO JJ CHEN TJ HWANG JD
Citation: Kh. Wu et al., SINGLE SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR RESISTIVE-FUSE APPLICATIONS/, Electronics Letters, 33(21), 1997, pp. 1824-1825

Authors: HO JJ FANG YK WU KH TSAI CS
Citation: Jj. Ho et al., HIGH-GAIN P-I-N INFRARED PHOTOSENSORS WITH BRAGG REFLECTORS ON AMORPHOUS SILICON-GERMANIUM ALLOY, Applied physics letters, 70(7), 1997, pp. 826-828

Authors: WU KH FANG YK FANG JY HWANG JD
Citation: Kh. Wu et al., THE GROWTH AND CHARACTERIZATION OF SILICON SILICON CARBIDE HETEROEPITAXIAL FILMS ON SILICON SUBSTRATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 35(7), 1996, pp. 3836-3840

Authors: HWANG JD FANG YK SONG YJ
Citation: Jd. Hwang et al., TRANSPARENT CONTACTS TO BETA-SIC FOR OPTICAL ELECTRONIC DEVICE APPLICATIONS, Thin solid films, 283(1-2), 1996, pp. 8-11
Risultati: 1-25 | 26-50 | 51-58