Citation: Kh. Wu et al., A HIGH OPTICAL-GAIN BETA-SIC BULK-BARRIER PHOTOTRANSISTOR FOR HIGH-TEMPERATURE APPLICATIONS, IEEE photonics technology letters, 10(11), 1998, pp. 1611-1613
Authors:
HO JJ
FANG YK
WU KH
HSIEH WT
CHEN CH
CHEN GS
JU MS
LIN JJ
HWANG SB
Citation: Jj. Ho et al., HIGH-SENSITIVITY ETHANOL GAS SENSOR INTEGRATED WITH A SOLID-STATE HEATER AND THERMAL ISOLATION IMPROVEMENT STRUCTURE FOR LEGAL DRINK-DRIVE LIMIT DETECTING, Sensors and actuators. B, Chemical, 50(3), 1998, pp. 227-233
Citation: Kh. Wu et al., NOVEL SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR USE AS SWITCH WITH HIGH ON/OFF CURRENT RATIO AND LOW-POWER DISSIPATION/, IEEE electron device letters, 19(8), 1998, pp. 294-296
Authors:
HO JJ
FANG YK
WU KH
HSIEH WT
CHU CW
HUANG CR
JU MS
CHANG CP
Citation: Jj. Ho et al., A HIGH-SENSITIVITY LEAD-TITANATE (PBTIO3) PYROELECTRIC THIN-FILM INFRARED-SENSOR WITH TEMPERATURE ISOLATION IMPROVEMENT STRUCTURE, IEEE electron device letters, 19(6), 1998, pp. 189-191
Authors:
HO JJ
FANG YK
WU KH
HSIEH WT
HUANG SC
CHEN GS
JU MS
LIN JJ
Citation: Jj. Ho et al., HIGH-SPEED AMORPHOUS-SILICON GERMANIUM INFRARED-SENSORS PREPARED ON CRYSTALLINE SILICON SUBSTRATES, I.E.E.E. transactions on electron devices, 45(9), 1998, pp. 2085-2088
Citation: Kh. Wu et al., SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR HIGH-TEMPERATURE APPLICATIONS/, Applied physics letters, 72(23), 1998, pp. 3017-3019
Citation: Kh. Wu et al., BETA-SIC PHOTODIODES PREPARED ON SILICON SUBSTRATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 36(8), 1997, pp. 5151-5155
Authors:
LEE KY
FANG YK
CHEN CW
YAUNG DN
WUU KH
HO JJ
LIANG MS
WUU SG
Citation: Ky. Lee et al., THE IMPACTS OF BACK-END HIGH-TEMPERATURE THERMAL TREATMENTS ON THE CHARACTERISTICS AND GATE OXIDE RELIABILITY OF THIN-FILM-TRANSISTOR IN ULTRA LARGE-SCALE INTEGRATED-CIRCUIT PROCESS, JPN J A P 1, 36(5A), 1997, pp. 2628-2632
Authors:
LEE KY
FANG YK
CHENG CW
HUANG KC
LIANG MS
WUU SG
Citation: Ky. Lee et al., IMPACT OF HYDROGENATING PLASMA-INDUCED OXIDE CHARGING EFFECTS ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS, JPN J A P 1, 36(3A), 1997, pp. 1025-1029
Authors:
LEE KY
FANG YK
CHEN CW
HUANG KC
LIANG MS
WUU SG
Citation: Ky. Lee et al., THE ANOMALOUS BEHAVIOR OF HYDROGENATED UNHYDROGENATED POLYSILICON THIN-FILM TRANSISTORS UNDER ELECTRIC STRESS/, IEEE electron device letters, 18(8), 1997, pp. 382-384
Citation: Ky. Lee et al., A NOVEL STACK STRUCTURE TO IMPROVE THE DEGRADATION OF W-POLYCIDE GATED MOS DEVICE WITH UNDOPED A-SI HEAVILY-DOPED POLY-SI MULTILAYER, IEEE electron device letters, 18(5), 1997, pp. 181-183
Authors:
LEE KY
FANG YK
CHEN CW
HUANG KC
LIANG MS
WUU SG
Citation: Ky. Lee et al., THE ELECTROSTATIC CHARGING DAMAGE ON THE CHARACTERISTICS AND RELIABILITY OF POLYSILICON THIN-FILM TRANSISTORS DURING PLASMA HYDROGENATION, IEEE electron device letters, 18(5), 1997, pp. 187-189
Authors:
LEE KY
FANG YK
CHEN CW
HWANG KC
LIANG MS
WUU SG
Citation: Ky. Lee et al., TO SUPPRESS UV DAMAGE ON THE SUBTHRESHOLD CHARACTERISTIC OF TFT DURING HYDROGENATION FOR HIGH-DENSITY TFT SRAM, IEEE electron device letters, 18(1), 1997, pp. 4-6
Citation: Ky. Lee et al., HIGH-PERFORMANCE POLYSILICON THIN-FILM TRANSISTORS BY H2O PLASMA HYDROGENATION, Thin solid films, 305(1-2), 1997, pp. 327-329
Citation: Ky. Lee et al., RAPID THERMAL ANNEALING ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS IN PRACTICAL TFT SRAM PROCESS, I.E.E.E. transactions on electron devices, 44(9), 1997, pp. 1561-1562
Citation: Fy. Chen et al., NUMERICAL-ANALYSIS OF A PBTIO3 FERROELECTRIC THIN-FILM INFRARED OPTICAL DIODE, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 937-942
Citation: Jd. Hwang et al., IMPROVING BREAKDOWN VOLTAGE OF SIC SI HETEROJUNCTION WITH GRADED STRUCTURE BY RAPID THERMAL CVD TECHNOLOGY/, I.E.E.E. transactions on electron devices, 44(11), 1997, pp. 2029-2031
Citation: Yk. Fang et al., AN INTEGRATED PIN MISS OEIC FOR HIGH-CURRENT PHOTORECEIVER APPLICATIONS/, I.E.E.E. transactions on electron devices, 44(1), 1997, pp. 34-38
Citation: Kh. Wu et al., SINGLE SIC SI HETEROSTRUCTURE NEGATIVE-DIFFERENTIAL-RESISTANCE DIODE FOR RESISTIVE-FUSE APPLICATIONS/, Electronics Letters, 33(21), 1997, pp. 1824-1825
Citation: Jj. Ho et al., HIGH-GAIN P-I-N INFRARED PHOTOSENSORS WITH BRAGG REFLECTORS ON AMORPHOUS SILICON-GERMANIUM ALLOY, Applied physics letters, 70(7), 1997, pp. 826-828
Citation: Kh. Wu et al., THE GROWTH AND CHARACTERIZATION OF SILICON SILICON CARBIDE HETEROEPITAXIAL FILMS ON SILICON SUBSTRATES BY RAPID THERMAL CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 35(7), 1996, pp. 3836-3840