Authors:
SUMIYA M
ENOMOTO H
FUKE S
KATO T
LEE SS
TAKAI O
FEJFAR A
KOCKA J
KOINUMA H
Citation: M. Sumiya et al., PROPERTIES OF AMORPHOUS-CARBON FILMS CHARACTERIZED BY LASER-DESORPTION TIME-OF-FLIGHT MASS-SPECTROSCOPY, Journal of non-crystalline solids, 230, 1998, pp. 632-635
Authors:
KOCKA J
OSWALD J
FEJFAR A
SEDLACIK R
ZELEZNY V
THEHA H
LUTEROVA K
PELANT I
Citation: J. Kocka et al., CHARGE-TRANSPORT IN POROUS SILICON - CONSIDERATIONS FOR ACHIEVEMENT OF EFFICIENT ELECTROLUMINESCENCE, Thin solid films, 276(1-2), 1996, pp. 187-190
Citation: A. Fejfar et al., COMMENTS ON SPACE-CHARGE-LIMITED TIME-OF-FLIGHT MEASUREMENTS IN POST-TRANSIT MODE, APPLIED TO A-SI-H BASED SOLAR-CELLS, Journal of non-crystalline solids, 200, 1996, pp. 190-193
Citation: A. Fejfar et al., PRECISE MEASUREMENT OF THE DEEP DEFECTS AND SURFACE-STATES IN A-SI-H FILMS BY ABSOLUTE CPM, Journal of non-crystalline solids, 200, 1996, pp. 304-308
Citation: J. Kocka et al., ELECTRIC AND PHOTOELECTRIC PROPERTIES OF HIGH-POROSITY SILICON, Physica status solidi. b, Basic research, 190(1), 1995, pp. 27-33
Authors:
ZEMEK J
LUCHES A
LEGGIERI G
FEJFAR A
TRCHOVA M
Citation: J. Zemek et al., CHARACTERIZATION OF CARBON NITRIDE FILMS PREPARED BY LASER REACTIVE ABLATION DEPOSITION, Journal of electron spectroscopy and related phenomena, 76, 1995, pp. 747-752
Citation: M. Vanecek et al., DIRECT MEASUREMENT OF THE DEEP DEFECT DENSITY IN THIN AMORPHOUS-SILICON FILMS WITH THE ABSOLUTE CONSTANT PHOTOCURRENT METHOD, Journal of applied physics, 78(10), 1995, pp. 6203-6210
Citation: A. Fejfar et al., HYDROGEN AND NITROGEN BONDING IN SILICON-NITRIDE LAYERS DEPOSITED BY LASER REACTION ABLATION - INFRARED AND X-RAY PHOTOELECTRON STUDY, Applied physics letters, 67(22), 1995, pp. 3269-3271
Citation: A. Fejfar et al., THIN-FILMS PREPARED BY SIMULTANEOUS DEPOSITION OF COPPER AND FREE-BASE PHTHALOCYANINE, Czechoslovak journal of Physics, 43(9-10), 1993, pp. 905-909