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Results: 1-25/72
Authors:
Foxon, CT
Novikov, SV
Liao, Y
Winser, AJ
Harrison, I
Li, T
Campion, RP
Staddon, CR
Davis, CS
Citation: Ct. Foxon et al., The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 203-206
Authors:
Bell, A
Ponce, FA
Novikov, SV
Foxon, CT
Harrison, I
Citation: A. Bell et al., Spatially resolved cathodoluminescence study of As doped GaN, PHYS ST S-B, 228(1), 2001, pp. 207-211
Authors:
Harrison, I
Novikov, SV
Li, T
Campion, RP
Staddon, CR
Davis, CS
Liao, Y
Winser, AJ
Foxon, CT
Citation: I. Harrison et al., On the origin of blue emission from As-doped GaN, PHYS ST S-B, 228(1), 2001, pp. 213-217
Authors:
Foxon, CT
Novikov, SV
Campion, RP
Liao, Y
Winser, AJ
Harrison, I
Citation: Ct. Foxon et al., The influence of As on the optimum nitrogen to gallium ratio required to grow high quality GaN films by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 219-222
Authors:
Novikov, SV
Li, T
Winser, AJ
Campion, RP
Staddon, CR
Davic, CS
Harrison, I
Foxon, CT
Citation: Sv. Novikov et al., Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system, PHYS ST S-B, 228(1), 2001, pp. 223-225
Authors:
Novikov, SV
Li, T
Winser, AJ
Foxon, CT
Campion, RP
Staddon, CR
Davis, CS
Harrison, I
Kovarsky, AP
Ber, BJ
Citation: Sv. Novikov et al., The influence of arsenic incorporation on the optical properties of As-doped GaN films grown by molecular beam epitaxy using arsenic tetramers, PHYS ST S-B, 228(1), 2001, pp. 227-229
Authors:
Hashimoto, A
Kitano, T
Takahashi, K
Kawanishi, H
Patane, A
Foxon, CT
Yamamoto, A
Citation: A. Hashimoto et al., Raman characterization of MBE grown (Al)GaAsN, PHYS ST S-B, 228(1), 2001, pp. 283-286
Authors:
Rampton, VW
Kennedy, I
Mellor, CJ
Bracher, B
Henini, M
Foxon, CT
Harris, JJ
Citation: Vw. Rampton et al., Surface acoustic wave attenuation by the localized states of a two-dimensional carrier system. in a magnetic field, SEMIC SCI T, 16(3), 2001, pp. 136-139
Authors:
Novikov, SV
Winser, AJ
Harrison, I
Davis, CS
Foxon, CT
Citation: Sv. Novikov et al., A study of the mechanisms responsible for blue emission from arsenic-dopedgallium nitride, SEMIC SCI T, 16(2), 2001, pp. 103-106
Authors:
Fewster, PF
Andrew, NL
Foxon, CT
Citation: Pf. Fewster et al., Microstructure and composition analysis of group III nitrides by X-ray scattering, J CRYST GR, 230(3-4), 2001, pp. 398-404
Authors:
Marlafeka, S
Bock, N
Cheng, TS
Novikov, SV
Winser, AJ
Harrison, I
Foxon, CT
Brown, PD
Citation: S. Marlafeka et al., A structural study of phase transitions within GaN layers grown by low-temperature molecular beam epitaxy, J CRYST GR, 230(3-4), 2001, pp. 415-420
Authors:
Winser, AJ
Harrison, I
Novikov, SV
Davis, CS
Campion, R
Cheng, TS
Foxon, CT
Citation: Aj. Winser et al., Blue emission from arsenic doped gallium nitride, J CRYST GR, 230(3-4), 2001, pp. 527-532
Authors:
Foxon, CT
Novikov, SV
Campion, RP
Davis, CS
Cheng, TS
Winser, AJ
Harrison, I
Citation: Ct. Foxon et al., Growth of GaNAs films by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 486-490
Authors:
Davis, CS
Novikov, SV
Cheng, TS
Campion, RP
Foxon, CT
Citation: Cs. Davis et al., Surface reconstruction patterns of AlN grown by molecular beam epitaxy on sapphire, J CRYST GR, 226(2-3), 2001, pp. 203-208
Authors:
Xu, HZ
Bell, A
Wang, ZG
Okada, Y
Kawabe, M
Harrison, I
Foxon, CT
Citation: Hz. Xu et al., Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate, J CRYST GR, 222(1-2), 2001, pp. 96-103
Authors:
Xu, HZ
Takahashi, K
Wang, CX
Wang, ZG
Okada, Y
Kawabe, M
Harrison, I
Foxon, CT
Citation: Hz. Xu et al., Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE, J CRYST GR, 222(1-2), 2001, pp. 110-117
Authors:
Stanton, NM
Kent, AJ
Akimov, AV
Hawker, P
Cheng, TS
Foxon, CT
Citation: Nm. Stanton et al., Energy relaxation by hot electrons in n-GaN epilayers, J APPL PHYS, 89(2), 2001, pp. 973-979
Authors:
Bell, A
Ponce, FA
Novikov, SV
Foxon, CT
Harrison, I
Citation: A. Bell et al., The nature of arsenic incorporation in GaN, APPL PHYS L, 79(20), 2001, pp. 3239-3241
Authors:
Gil, B
Morel, A
Taliercio, T
Lefebvre, P
Foxon, CT
Harrison, I
Winser, AJ
Novikov, SV
Citation: B. Gil et al., Carrier relaxation dynamics for As defects in GaN, APPL PHYS L, 79(1), 2001, pp. 69-71
Authors:
Stanton, NM
Akimov, AV
Kent, AJ
Cheng, TS
Foxon, CT
Citation: Nm. Stanton et al., Absorption of nonequilibrium acoustic phonons by low-mobility electrons inGaN, APPL PHYS L, 78(8), 2001, pp. 1089-1091
Authors:
Bulbul, MM
Smith, SRP
Obradovic, B
Cheng, TS
Foxon, CT
Citation: Mm. Bulbul et al., Raman spectroscopy of optical phonons as a probe of GaN epitaxial layer structural quality, EUR PHY J B, 14(3), 2000, pp. 423-429
Authors:
Fletcher, R
Feng, Y
Foxon, CT
Harris, JJ
Citation: R. Fletcher et al., Electron-phonon interaction in a very low mobility GaAs/Ga1-xAlxAs delta-doped gated quantum well, PHYS REV B, 61(3), 2000, pp. 2028-2033
Authors:
Kuball, M
Benyoucef, M
Morrissey, FH
Foxon, CT
Citation: M. Kuball et al., Focused ion beam etching of nanometer-size GaN/AlGaN device structures andtheir optical characterization by micro-photoluminescence/Raman mapping, MRS I J N S, 5, 2000, pp. NIL_816-NIL_821
Authors:
Fewster, PF
Andrew, NL
Hughes, OH
Staddon, C
Foxon, CT
Bell, A
Cheng, TS
Wang, T
Sakai, S
Jacobs, K
Moerman, I
Citation: Pf. Fewster et al., X-ray studies of group III-nitride quantum wells with high quality interfaces, J VAC SCI B, 18(4), 2000, pp. 2300-2303
Authors:
Cherkashin, NA
Bert, NA
Musikhin, YG
Novikov, SV
Cheng, TS
Foxon, CT
Citation: Na. Cherkashin et al., TEM structural studies of undoped and Si-doped GaN grown on Al2O3 substrate, SEMICONDUCT, 34(8), 2000, pp. 867-871